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Volume 21(1); January 2008

Characteristics of poly-Si TFTs using Excimer Laser Annealing Crystallization and high-k Gate Dielectrics
J Korean Inst Electr Electron Mater Eng 2008;21(1):1-4.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.001
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Properties Electric of AIN Thin Film on the Si and GaAs Substrate
J Korean Inst Electr Electron Mater Eng 2008;21(1):5-11.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.005
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Operation Characteristics of Bypass Diode for PV Module
J Korean Inst Electr Electron Mater Eng 2008;21(1):12-17.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.012

Citations

Citations to this article as recorded by  
  • Numerical Analysis of Si-based Photovoltaic Modules with Different Interconnection Methods
    Chihong Park, Nari Yoon, Yong-Ki Min, Jae-Woo Ko, Jong-Rok Lim, Dong-Sik Jang, Jae-Hyun Ahn, Hyungkeun Ahn
    Transactions on Electrical and Electronic Materials.2014; 15(2): 103.     CrossRef
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Thermal Stability Improvement of Ni-Suicide using Ni-Co alloy for Nano-scale CMOSFET
J Korean Inst Electr Electron Mater Eng 2008;21(1):18-22.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.018
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Modeling of Anode Voltage Drop for PT-IGBT at Turn-off
J Korean Inst Electr Electron Mater Eng 2008;21(1):23-28.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.023
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Electrical and Physical Characteristics of Nickel Suicide using Rare-Earth Metals
J Korean Inst Electr Electron Mater Eng 2008;21(1):29-34.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.029
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A Study on the Construction of the Optimum Design Process of Medium Intensity LED Aviation Obstacle Light
J Korean Inst Electr Electron Mater Eng 2008;21(1):35-43.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.035
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Hole Mobility Characteristics of Biaxially Strained SiGe/Si Channel Structure with High Ge Content
J Korean Inst Electr Electron Mater Eng 2008;21(1):44-48.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.044
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Fabrication and Reliability Properties of Ni-Cr Alloy Thin Film Resistors
J Korean Inst Electr Electron Mater Eng 2008;21(1):57-62.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.057
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Display,Optical Devices : Fabrication and Addressing Method of Charged Particle Type Display
J Korean Inst Electr Electron Mater Eng 2008;21(1):63-67.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.063
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Display,Optical Devices : LED Design using Resistor Network Model
J Korean Inst Electr Electron Mater Eng 2008;21(1):73-78.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.073
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High Voltage : Partial Discharge Measurement by a Capacitive Voltage Probe in a Gas Insulated Switch
J Korean Inst Electr Electron Mater Eng 2008;21(1):85-89.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.085
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