The cause of the thickness non-uniformity in the large area deposition of SiO2 films by PECVD(Plasma Enhanced Chemical Vapor Deposition) was investigated by the plasma diagnostics. The spatial distribution of the plasma species in the chamber was obtained with DLP(Double Langmuir Probe) and the new-designed probe-type QMS(Quadrupole Mass Spectrometer). From the relationship between the spatial distribution of the plasma species and the depositing rate of the SiO2 films, it was conformed that the non-uniform deposition of SiO2 films was related with the spatial distribution of the oxygen radical density and electron temperature.

In wireless X networks where all transmitters send the independent messages to all receivers, the theoretical bound on the degrees of freedom (DOF) and interference alignment (IA) scheme for its achievability are given by Cadambe and Jafar [1]. However, IA scheme for wireless X network may be infeasible in practice unless the transmitters have the perfect channel information. In addition, if the transmitter with single antenna uses time-varying channel coefficients as a beamforming vector, the infinite channel extension is required to achieve the theoretical bound on the DOF of wireless X networks with perfect IA scheme. In this paper, we consider K-user MIMO X network where K transmitters and K receivers have M antennas each. While the beamforming vectors have been constructed with multiple channel uses over multiple time slot in the earlier work, we consider the beamforming vectors constructed only by a spatial signature over unit time. Accordingly the channel information at the transmitters can be available instantaneously. Then we propose the perfect IA scheme with no channel extension. Based on our sum-rate analysis and the simulation results, we confirm that our proposed scheme can achieve MK/2 DOF which is quite close to the theoretical bound on the DOF region of wireless X networks.

In multicell wireless systems with insufficient frequency reuse, user transmission will suffer other-cell interference (OCI). Cell cooperation is an effective way to mitigate OCI and increase the system sum rate. An adaptive scheme for serving one user in each cell was proposed in [1]. In this paper, we generalize that scheme by serving two users in each cell with adaptive zeroforcing beamforming (ZF) strategies. Based on our derived statistics of the signal-to-noise plus interference ratios, we choose the scheme to maximize the total ergodic sum-rate based on user locations. Through the numerical examples, we show that the total system sum rate can be improved by selecting appropriate transmitting strategy adaptively. As a result, our proposed system can explore spatial multiplexing gain without additional power and thus improves total system sum rate significantly.

The semiconducting material of ZnO in II-VI group was well known as its good application for photo electronics, chemical sensors and field effect transistors due to the remarkable optical properties with wide energy band gap and great ionic reactivities. Up to now the growth of a good quality of ZnO film has been issued for better performances. Even though there were many deposition methods for making ZnO films, pulse laser deposition methods have been preferred for high crystalline films. In this report, the ZnO film was also created by pulsed laser deposition technique which also showed high crystalinity. By controlling several factors when deposited, it was investigated that the optimal condition for ZnO film formation. Mainly, oxygen partial pressures and growth temperatures were changed when ZnO films were synthesized and followed the characterization by HRXRD and AFM.

To stabilize the electric characteristic of Silicon Thin Film Transistor, reducing the current leakage is most important issue. To reduce the current leakage, many ideas were suggested. But the increse of mask layer also increased the cost. On this research Bird`s Beak process was use to present element. Using Silvaco simulator, it was proven that it was able to reduce current leakage without mask layer. As a result, it was possible to suggest the structure that can reduce the current leakage to 1.39nA without having mask layer increase. Also, I was able to lead the result that electric characteristic (on/off current ratio) was improved compare from conventional structure.

Abstract: The 0.98 (Na0.44K0.52)Nb0.84O3-0.02Li0.04 (Sb0.06Ta0.1)O3-0.5 mol%CuO ceramics have been fabircated by ordinary sintering technique and the effect of various calcination method on the electrical propertis and microstructure have been studied. It was observed that the various calcination method influenced the elelctrical properties and structural properties of the 0.98NKN-0.02LST-0.5 mol%CuO ceramics with the optimum piezoelectric constant (d33) and electromechanical coupling factor (kp) at room temperature of about 155ρC/N and 0.349, respectively, from 0.98NKN-0.02LST-0.5 mol%CuO ceramics sample. The curie temperature (Tc) of this ceramic was found at 440℃. The 0.98NKN-0.02LST-0.5 mol%CuO ceramics are a promising lead-free piezoelectric ceramics.

Ribbon silicon solar cells have been investigated because they can be produced with a lower material cost. However, it is very difficult to get good texturing with a conventional acid solution. To achieve high efficiency should be minimized for the reflectance properties. In this paper, acid vapor texturing and anti-reflection coating of SiNx was applied for EFG Ribbon Si Wafer. P-type ribbon silicon wafer had a thickness of 200 um and a resistivity of 3 n-㎝. Ribbon silicon wafers were exposed in an acid vapor. Acid vapor texturing was made by reaction between the silicon and the mixed solution of HF: HNO3. After acid vapor texturing process, nanostructure of less than size of 1 um was formed and surface reflectance of 6.44% was achieved. Reflectance was decreased to 2.37% with anti-reflection coating of SiNx.

In this study, off-axis magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about 120℃ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The ITO thin films grown on PET substrate at 120℃ were crystallized with a (222) preferred orientation. 58-nm thick ITO films showed a resistivity of about 2 x 10-4 n·cm and a transmittance of about 75% at a wavelength of 550 nm. The transmittance of the ITO thin films by an insertion of SiO2 thin films on ITO films was improved.

We have been studied the effects of oxidant on the properties of Sr-ferrite magnets using mill scale for motor. The small-added (0.5 wt%) NaNO3 oxidant improved significantly the degree of oxidation and the grindability of mill scale, and then highly enhanced the magnetic properties of anisotropic Sr-ferrite sintered magnets; such as the remanent flux density from 3.55 to 3.80 kG, the intrinsic coercivity from 2.75 to 3.22 kOe, and the maximum energy product from 2.90 to 3.45 MGOe.

The fault current limiting characteristics of the flux-lock type superconducting fault current limiter (SFCL) using a transformer winding were investigated. The suggested flux-lock type SFCL consists of two parallel connected coils on an iron core and the transformer winding connected in series with one of two coils. In this SFCL, the high-TC superconducting (HTSC) element was connected with the secondary side of the transformer. The short-circuit experimental devices to analyze the fault current limiting characteristics of the flux-lock type SFCL using the transformer winding were constructed. Through the short-circuit tests, the flux-lock type SFCL using transformer winding was shown to perform more effective fault current limiting operation compared to the previous flux-lock type SFCL without the transformer winding from the viewpoint of the quench occurrence and the recovery time of the HTSC element.

When the current of the superconducting element exceeds its critical current by the fault occurrence, the quench of the high-TC superconducting fault current limiter (HTSC) comprising the flux-lock type superconducting fault current limiter (SFCL) occurs. Simultaneously, the magnetic flux in the iron core induces the voltage in each coil, which contributes to limit the fault current. In this paper, the fault current limiting characteristics of the flux-lock type SFCL as well as the load voltage sag suppressing characteristics according to the flux-lock type SFCL`s winding direction were investigated. To confirm the fault current limiting and the voltage sag suppressing characteristics of the this SFCL, the short-circuit tests for the simulated power system with the flux-lock type SFCL were carried out. The flux-lock type SFCL designed with the additive polarity winding was shown to perform more effective fault current limiting and load voltage sag suppressing operations through the fast quench occurrence right after the fault occurs and the fast recovery operation after the fault removes than the flux-lock type SFCL designed with the subtractive polarity winding.

We were analyzed the piezoelectric characteristic for electronics printing to inkjet printing system. These applications were possible use to Actuator, MEMS, FPCB, RFID, Solar cell and LCD color filter etc. Piezoelectric print head is firing from ink droplet control consideration ink viscosity properties. At this time, micro pattern for PCB metal printing was possible by droplet control of piezoelectric driving. These driving characteristics are variable voltage pulse waveform. We are used the piezoelectric analysis software of Finite Element Method (FEM), Piezoelectric design parameters are acquired from piezoelectric analysis, and measurement of piezoelectric. It designed for piezoelectric head to possible electric print pattern of inkjet printing system. For this validity we were established through in comparison with simulation and measurement. Designed piezoelectric specification obtained voltage 98V, firing frequency 10 kHz, resolution 360dpi, drop volume 20pl, nozzle number 256, and nozzle pitch 0.33 mm.

Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn`t have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.

The present study introduces a novel wet etching technique for nanostructure fabrications which usually requires low surface roughness. Using the current method, acquired profiles were smooth even in the nanoscale, which cannot be easily achieved with conventional wet or dry etching methods. As one of the most popular single crystal silicon etchant, potassium hydroxide (KOH) solution was used as a base solvent and two additives, antimony trioxide (Sb2O3) and ethyl alcohol were employed in. Four experimental parameters, concentrations of KOH, Sb2O3, and ethyl alcohol and temperature were optimized at 60 wt.%, 0.003 wt.%, 10 v/v%, and 23℃, respectively. Effects of additives in KOH solution were investigated on the profiles in both (110) and (111) planes of single crystal silicon wafer. The preliminary results show that additives play a critical role to decrease etch rate significantly down to ~2 nm/min resulting in smooth side wall profiles on (111) plane and enhanced surface roughness.

In this paper, CuInSe2 thin film was prepared by use of the co-evaporation method with the variation of the substrate temperature in the range of 100℃ to 400℃. The film was annealed at 300℃ for an hour in a vacuum chamber at 3×10-4 Pa. After annealing, the thin film prepared at the substrate temperatures of 100℃ and 200℃ was observed. The XRD (x-ray diffraction) pattern of sample prepared at 100℃ showed the single phase formation of CuInSe2. However, at 200℃, there was no apparent difference in the XRD pattern except a variation in the intensity of the peak. As the annealing treatment of substrate improved the crystal structure of the film, it affected to the increase of an electron mobility, resulted in an increase in conductivity and a decrease in resistance. As a results, when the substrate temperature was at 200℃ and 300℃, the sheet resistance was 1.534 n/and 1.554 n/, respectively, and the resistivity was 1.76×10-6 n·㎝ and 1.7210-6 n·㎝, respectively. From the absorption spectrum measurements, there was no variation between the before and after annealing conductions. And it means that the annealing step does not affect the thickness of the thin film.

We use the electrical energy and it is essential energy in modern life, but we lay cable underground due to the issue for environment and safety. Safety for worker is still insufficient for the development of safety equipment and related research has been focused on the cable lifetime diagnosis at underground cable work. I have to develop live line detector around the magnetic field were investigated at underground cable. In this paper, we were investigated by variation of coil turns and load due to detection of magnetic field at lines around. And detected value of developing products compared with measured value of milli-gauss meter. As a result, the value of the number of coil turns was found to be proportional to the measured value. But turn-numbers increase showed that the weak noise. I could be confirmed that sensor showed the optimum value from 4,000 to 5,0000.