In this paper, we present a MEMS (micro-electro-mechanical system) implantable blood pressure sensor which has designed and fabricated with consideration of size, design flexibility, and wireless detection. Mechanical and electrical characterizations of the sensor were obtained by mathematical analysis and computer aided simulation. The sensor is composed of two coils and a air gap capacitor formed by separation of the coils. Therefore, the sensor produces its resonant frequency which is changed by external pressure variation. This frequency movement is detected by inductive coupling between the sensor and an external antenna coil. Theoretically analyzed resonant frequency of the sensor under 760 mmHg was calculated to 269.556 MHz. Fused silica was selected as sensor material with consideration of chemical and electrical reaction of human body to the material. 2 mm × 5 mm × 0.5 mm pressure sensors fitted to radial artery were fabricated on the substrates by consecutive microfabrication processes: sputtering, etching, photolithography, direct bonding and laser welding. Resonant frequencies of the fabricated sensors were in the range of 269∼284 MHz under 760 mmHg pressure.

Transparent thin film transistors (TTFT) were fabricated on N+ Si wafers. SiO2, Si3N4/SiO2 and Al2O3/SiO2 grown on the wafers were used as gate insulators. The rf magnetron sputtered zinc tin oxide (ZTO) films were adopted as active layers. N+Si wafers were wet-oxidized to grow SiO2. Si3N4 and Al2O3 films were deposited on the SiO2 by plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD), respectively. The mobility, Ion/Ioff and subthreshold swing (SS) were obtained from the transfer characteristics of TTFTs. The properties of gate insulators were analyzed by comparing the characteristics of TTFTs. The property variation of the ZTO TTFTs with time were observed.

The chalcogenide glass has superior optical properties in IR region transmittances. We have determined the composition of GeSbSe chalcogenide glass for the application of good IR lenses, resulting in the composite rate of Ge19Sb23Se58. The optical, structural, thermal and physical properties were measured by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), X-ray computed tomography (X-ray CT) respectively. The fabrication of the chalcogenide glass lens for infrared optics applications was proposed using a diamond turning machining technology which is known as the suitable ways for the production cost reduction and the accurate fabrication process control.

Power MOSFET and Power IGBT is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters. In this paper, design the 80V MOSFET Planar Gate type, and design the Trench Gate type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

We investigated the effect of etching time on the surface roughness, and electrical and optical properties of ZnO and 2 wt% Al-doped ZnO (AZO) films. The ZnO and AZO films were deposited on glass substrates by RF magnetron sputtering technique. The etching experiment was carried out using a solution of 5% HCl at room temperature. The surface roughness was characterized by Atomic Force Microscopy. The electrical property was measured by Hall measurement system and 4-point probe. The optical property was characterized by UV-vis spectroscopy. After the wet chemical etching, the surface textures were obtained on the surface of the ZnO and AZO films. With the increase of etching time, the surface roughness (RMS) of the films increased and the transmittance of the films was observed to decrease. For the AZO film, a low resistivity of 1.0×10-3 Ω·cm was achieved even after the etching.

Dye-sensitized solar cells (DSSCs) based on titanium dioxide (TiO2) have been extensively studied because of their promising low-cost alternatives to conventional semiconductor based solar cells. DSSCs consist of molecular dye at the interface between a liquid electrolyte and a mesoporous wide-bandgap semiconductor oxide. Most efforts for high conversion efficiencies have focused on dye and liquid electrolytes. However, interface engineering between dye and electrode is also important to reduce recombination and improve efficiency. In this work, for interface engineering, we deposited semiconducting ferroelectric BiFeO3 with bandgap of 2.8 eV on TiO2 nanoparticles and nanotubes. Photovoltaic properties of DSSCs were characterized as a function of thickness of BiFeO3. We showed that ferroelectric BiFeO3-coated TiO2 electrodes enable to increase overall efficiency of DSSCs, which was associated with efficient electron transport due to internal electric field originating from electric polarization. It was suggested that engineering the dye-TiO2 interface using ferroelectric materials as inorganic modifiers can be key parameter for enhanced photovoltaic performance of the cell.

In this study, KNbO3-substituted (Li,Na,K)(Nb,Sb,Ta)O3 ceramics were investigated to develop Pb-free composition ceramics for multilayer actuator and energy harvester applications. The X-ray diffraction analysis indicated that all samples were pure perovskite phase and no secondary phase was found. A tetragonality as a function of KNbO3 substitution showed the maximum value at 1.5 mol% KNbO3 and then decreased. The SEM image analysis showed the maximum grain size of 3.14 ㎛ at 1.5mol% KNbO3. In the composition ceramics with 1.5 mol% KNbO3 sintered at 1,100℃, excellent properties of density= 4.75 g/cm3, electromechanical coupling factor (kp)= 0.50 and piezoelectric constant(d33)= 290 pC/N were obtained, respectively, suitable for piezoelectric actuator and energy harvester applications.

DSSCs electrical characteristics and efficiency fabricated with different tape casting thickness Pt counter electrodes and different thickness between TiO2 photo electrode and Pt counter electrode substrate were studied. 1 layer Pt counter electrode shows 3.979% efficiency. Efficiency increased as tape casting thickness decreased. The lowest open-circuit voltage was a 0.726 V and the highest short-circuit current was a 2.188mA on 1 layer Pt counter electrode. On the different thickness between two substrates, the lowest open-circuit voltage 0.712 V and the highest short-circuit current 2.787mA was measured at 60 ㎛ surlyn film thickness and it shows the highest value of 5.067% efficiency.

The rated voltage has been rising in order to minimize the losses in power transmission. The high voltage electric machines should be minimized due to the constraints of space. Therefore, the temperature of high voltage electric apparatuses easily exceeds the temperature limits. In this paper, it is investigated that how to minimize the internal temperature rising of a high voltage switchgear by adjusting the arrangement of bus bars. High voltage switchgears consist of a circuit breaker, a CT, a PT, a earthing switches, bus bars, and so on. It is very difficult to estimate the electromagnetic properties of a high voltage switchgear due to these various environments and structures. In this paper, analyses are focused on the electromagnetic characteristics of bus bars according to the arrangement method and the enclosures to simplify the electromagnetic characteristics of a switchgear. It is found that the characteristics of electric field intensity and electromagnetic losses in bus bars are influenced by the arrangement method of bus bars. However, it is confirmed that the electromagnetic characteristics of enclosures are not affected by the arrangement of bus bars. In this paper, the arrangement methods of bus bars to minimize the electric field intensity and electromagnetic losses are suggested. It is expected that the research results are helpful to design and develop an electrically reliable high voltage switchgear.

The water soluble quantum dots (QDs) are synthesized by the phase transfer and silica coating reaction. The photoluminescence intensity of silica-coated QDs are mainly affected by the amount of phase transfer agent, SDS (sodium dodecyl sulfate), and the maximum value is obtained at the cmc (critical micell concentration) concentration of SDS in the phase transfer reaction. Based on fluorescence spectra and field emission transmission electron microscope (FETEM), the energy transfer rate by forster resonance energy transfer (FRET) is increasing with the thickness of the silica shell coated on CdSe/ZnS QDs.

Electrodeionization is a hybrid separation process of electrodialysis and ion exchange to produce high purity water under electric field. This article provides a fabrication result of hole patterned metal electrode for elecrodeionization system. The hole patterns have been fabricated by nanosphere lithography (NSL). The technique utilizes the self-assembled nanospheres as lens-mask patterns and collimated laser beam source. The hole patterns have a periodic array structure. The images of hole pattern on metal electrode prepared were observed by SEM. We believe that the periodic hole patterned metal electrode structure is a useful device applicable for metal mat electrode in electrodeionization system.

Thin light-active layers of the CuInSe2 solar cell were prepared on Mo-coated sodalime glass substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of CuInSe2 film could be controlled by deposition parameters, such as the composition of metallic precursors, the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A dense and uniform Cu-poor CuInSe2 film was successfully obtained in a range of parametric variation of electrodeposition with a constant voltage of -0.5 V vs. a Ag/AgCl reference electrode. The post-annealing of the film at high temperature above 500℃ induced crystallization of CuInSe2 with well-developed grains. The KCN-treatment of the annealed CuInSe2 films further induced Cu-poor CuInSe2 films without secondary phases, such as Cu2Se. The structure, morphology, and composition of CuInSe2 films were compared with respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS analysis. And the conditions for preparing device-quality CuInSe2 films by electrodeposition were proposed.

The utilization of a fluoran leuco sensitizer, 2-anilino-6-dibutyl amino-3-methylfluoran (ODB-2), for dye-sensitized solar cells (DSSCs) was investigated through the examination of the adsorption of ODB-2 molecules onto the surfaces of porous titanium dioxide (titania, TiO2) films and the photovoltaic properties of ODB-2-based DSSCs. Despite of the absence of the specific anchoring groups with titania, ODB-2 dye molecules were spontaneously adsorbed onto the titania surfaces because the lactone ring in ODB-2 was opened and changed into the carboxylic acid (-COOH) by releasing protons from the surfaces (TiOH2 +) of titania, which consequently leads to the chemisorption reaction of ODB-2 molecules to the active sites of titania. DSSCs based on ODB-2 exhibited typical photovoltaic properties with an open-circuit voltage (VOC) of 0.19 V, a short-circuit current (JSC) of 0.30 mA·cm-2, a fill factor (FF) of 37%, and a conversion efficiency (PCE) of 0.02%.

Screen printing is commonly used to form the front/back electrodes in silicon solar cell. But it has caused high resistance and low aspect ratio, resulting in decreased conversion efficiency in solar cell. Recently the plating method has been combined with screen-printed c-Si solar cell to reduce the resistance and improve the aspect ratio. In this paper, we investigated the effect of light induced silver plating with screen-printed c-Si solar cells and compared their electrical properties. All wafers were textured, doped, and coated with anti-reflection layer. The metallization process was carried out with screen-printing, followed by co-fired. Then we performed light induced Ag plating by changing the plating time in the range of 20 sec～5min with/without external light. For comparison, we measured the light I-V characteristics and electrode width by optical microscope. During plating, silver ions fill the porous structure established in rapid silver particle sintering during co-firing step, which results in resistance decrease and efficiency improvement. The plating rate was increased in presence of light lamp, resulting in widening the electrode with and reducing the short-circuit current by shadowing loss. With the optimized plating condition, the conversion efficiency of solar cells was increased by 0.4% due to decreased series resistance. Finally we obtained the short-circuit current of 8.66 A, open-circuit voltage of 0.632 V, fill factor of 78.2%, and efficiency of 17.8% on a silicon solar cell.

We introduced sensitizing dyes into the bulk-heterojunction (BHJ) photovoltaic (PV) layer of polymer solar cells (PSCs). The sensitizing dyes doped were Bis(tetra butyl ammonium) cis-dithio cyanato bis(2,2`-bipyridine-4-carboxylicacid-4`-carboxylate) ruthenium (II) (N719 dye) and the BHJ PV layer used was made of poly (3-hexylthiophene) (P3HT) and phenyl C61-butyric acid methyl ester (PCBM). It was found that the N719 dyes increase the photovoltaic performance, i.e., increasing open-circuit voltage and short-circuit current density with improved fill factor. For the P3HT: PCBM PV cells doped with the N719 dyes (0.24wt %), an increase in power conversion efficiency of 4.0% was achieved, compared to that of the control cells (3.6%) without the N719 dyes.