Titanium dioxide (TiO₂) holds significant scientific and technological relevance as a key photocatalyst and resistive random-access memory, demonstrating unique physicochemical properties and serving as an n-type semiconductor. Understanding the density and arrangement of oxygen vacancies (VOs) is crucial for tailoring TiO₂’s properties to diverse technological needs, driving increased interest in exploring oxygen vacancy complexes and superstructures. In this mini review, we summarize the recent understandings of the fundamental properties of oxygen vacancies in bulk rutile (R-TiO₂) and anatase (A-TiO₂) based on DFT and beyond method. We specifically focus on the excess electrons and their spatial arrangement of disordered single VO in bulk R and A-TiO₂, aligned with the experimental findings. We also highlight the theoretical works on investigating the geometries and stabilities of ordered VOs complexes in bulk TiO₂. This comprehensive review provides insights into the fundamental properties of excess electrons in reduced TiO₂, offering valuable perspectives for future research and technological advancements in TiO₂-based devices.

With the recent development of emerging technologies, information acquisition and delivery between users has been actively conducted, and inorganic thin film transfer technology that effectively transfers various materials and devices is being studied to develop flexible electronic devices accordingly. This is aimed at innovative structural changes and functional improvement of electronic devices in the era of the Internet of Things (IoT). In particular, advanced technologies such as micro- LEDs are used to realize high-resolution flexible displays, and the possibility of heterogeneous integrated technologies can be presented by precisely transferring materials to substrates through various transfer process. This paper introduced physical, chemical, and self-assembly transfer methods based on inorganic thin film materials to implement heterogeneous integrated flexible semiconductor systems and introduces the results of application studies of semiconductor devices obtained through different transfer technologies. These studies are expected to bring about innovative changes in the field of smart devices, medical technology, and user interfaces in the future.

In this study, ITO thin films were fabricated on a glass substrate at different thicknesses without introducing oxygen using RF sputtering system. The structural, electrical, and optical properties were evaluated at various thicknesses ranging from 50 to 300 mm. As the thickness of deposited ITO thin film become thicker from 50 to 100 mm, carrier concentration, mobility, and band gap energy also increased while the resistivity and transmittance decreased in the visible light region. When the film thickness increased from 100 to 300 mm, the carrier concentration, mobility, and band gap energy decreased while the resistivity and transmittance increased. The optimum electrical properties were obtained for the ITO film 100 nm. After optimizing the thickness, the ITO thin films were post-annealed at different temperatures ranging from 100 to 300℃. As the annealing temperature increased, the ITO crystal phase became clearer and the grain size also increased. In particular, the ITO thin film annealed at 300℃ indicated high carrier concentration (4.32 × 10²¹ cm^-3), mobility (9.01 cm2/V·s) and low resistivity (6.22 × 10^-4 Ω·cm). This means that the optimal post-annealing temperature is 300℃ and this ITO thin film is suitable for use in solar cells and display application.

This paper is an experimental study on the improvement of smoke and flame detection from different materials with YOLO. For the study, images of fires occurring in various materials were collected through an open dataset, and experiments were conducted by changing the main factors affecting the performance of the fire object detection model, such as the bounding box, polygon, and data augmentation of the collected image open dataset during data preprocessing. To evaluate the model performance, we calculated the values of precision, recall, F1Score, mAP, and FPS for each condition, and compared the performance of each model based on these values. We also analyzed the changes in model performance due to the data preprocessing method to derive the conditions that have the greatest impact on improving the performance of the fire object detection model. The experimental results showed that for the fire object detection model using the YOLOv5s6.0 model, data augmentation that can change the color of the flame, such as saturation, brightness, and exposure, is most effective in improving the performance of the fire object detection model. The real-time fire object detection model developed in this study can be applied to equipment such as existing CCTV, and it is believed that it can contribute to minimizing fire damage by enabling early detection of fires occurring in various materials.

Eu³⁺-doped BaZrO₃ (BaZrO₃:Eu³⁺+) phosphor powders were prepared using a solid-state reaction by changing the molar concentration of Eu³⁺ within the range of 0.5 to 30 mol%. Irrespective of the molar concentration of Eu³⁺ ions, the crystal structures of all the phosphors were cubic. The excitation spectra of BaZrO₃:Eu³⁺+ phosphors consisted of an intense broad band centered at 277 nm in the range of 230~320 nm. The emission spectra were composed of a dominant orange band at 595 nm arising from the 5D0→7F1 magnetic dipole transition of Eu³⁺ and two weak emission bands centered at 574 and 615 nm, respectively. As the concentration of Eu³⁺ increased from 0.5 to 10 mol%, the intensities of all the emission bands gradually increased, approached maxima at 10 mol% of Eu³⁺ ions, and then showed a decreasing tendency with further increase in the Eu3+ ions due to the concentration quenching. The critical distance between neighboring Eu³⁺ ions for concentration quenching was calculated to be 11.21 Å, indicating that dipole-dipole interaction was the main mechanism of concentration quenching of BaZrO₃:Eu³⁺+ phosphors. The results suggest that the orange emission intensity can be modulated by doping the appropriate concentration of Eu³⁺ ions.

In this paper, the electrical properties of liquid insulating oil were analyzed by changing the ambient temperature change at 10℃ in-tervals from 0℃ to 30℃ through an insulation breakdown experiment in order to analyze the insulation performance of liquid in-sulating oil that varies according to temperature changes. As a result, it was confirmed through experiments that the lower the am-bient temperature, the higher the insulation breakdown voltage, depending on both the electrode shape and the electrode interval, and it was determined that the lower the ambient temperature, the higher the insulation performance of the liquid insulating oil.

Research on aged insulation of cables by stress is constantly being considered for reliable and stable power transmission of offshore wind farms. This study aimed to evaluate the insulation characteristic of aged XLPE (cross-linked polyethylene) insulation for application of offshore wind farms. In this study, The XLPE insulation of cable was set as various mechanical strains. The XLPE insulation is exposed to the mechanical stress below yield strain of 5%, 10%, and 20%. Aged samples were tested by using the method of AC BDV (alternative current breakdown voltage), tensile strength, elongation, and SEM (scanning electron microscope) to obtain insulation characteristics. The experimental results show that the dielectric breakdown of the sample with a strain 20% was 50% lower than the unaged sample; thereby, demonstrating that the mechanical strain that occurred in the submarine cables can weaken the insulation characteristics. Therefore, mechanical strain should be monitored when laying and operating submarine cables for offshore wind farms.

In this study, Iron (III) oxide-hydroxide (δ-FeOOH) was successfully synthesized using hydrogen peroxide (H₂O₂) as an oxidizing agent. The synthesis of δ-FeOOH was carried out by controlling the amount of H₂O₂, and pure δ-FeOOH was successfully synthesized in ranges from 0.2 mL to 0.6 mL of H₂O₂. The size of the synthesized δ-FeOOH particles was compared by controlling the amount of oxidant H₂O₂. The average particle size of the synthesized pure δ-FeOOH particles increased from 875.1 nm to 897.2 nm as the amount of H₂O₂ was increased. The optical properties of δ-FeOOH synthesized under these specific conditions were investigated. All δ-FeOOH showed a similar trend of increasing and decreasing light absorption from 800 nm to 400 nm, although there was a slight difference in the amount of light absorption, with the largest amount of light absorption at 410 nm. The band gap energy of δ-FeOOH through the Tauc plot method was about 2.1~2.2 eV when H₂O₂ was 0.2~1.4 mL. With a sufficient small particle size, simple control of that particle size, and a small band gap energy enough to absorb light in the visible spectrum, δ-FeOOH could be useful in a variety of applications, including photoelectrochemistry and battery electrodes.

In this study, KTN heterolayer thin films were fabricated by alternately stacking films of K(Ta_0.70Nb_0.30)O₃ and K(Ta_0.55Nb_0.45)O₃ synthesized using the sol-gel method. The sintering temperature and time were 750℃ and 1 hour, respectively. All specimens exhibited a polycrystalline pseudo-cubic crystal structure, with a lattice constant of approximately 0.398 nm. The average grain size was around 130~150 nm, indicating relatively uniform sizes regardless of the number of coatings. The average thickness of a single-coated film was approximately 70 nm. The phase transition temperature of the KTN heterolayer films was found to be approximately 8~12℃. Moreover, the 6-coated KTN heterolayer film displayed an excellent dielectric constant of about 11,000. As the number of coatings increased, and consequently the film thickness, the remanent polarization increased, while the coercive field decreased. The 6-coated KTN heterolayer film exhibited a remanent polarization and coercive field of 11.4 μC/cm² and 69.3 kV/cm at room temperature, respectively. ΔT showed the highest value at a temperature slightly above the Curie temperature, and for the 6-coated KTN heterolayer film, the ΔT and ΔT/ΔE were approximately 1.93 K and 0.128×10^-6 K·m/V around 40℃, respectively.

In this paper, in order to analyze the PMU data of the accident section, we collected the raw data of a total of 35 PMU installed at the Yeonggwang substation and tried to find a way to analyze the data, and analyzed the data using Excel format and formula. As a result, the three-phase voltage and current data of the PMU were calculated using formulas in Excel and interpreted as effective and reactive power, and it was possible to check the effective and reactive power of the accident section through the graph to see why it was different from before the accident. As a result, it was confirmed that each power was greatly reduced in the graph of the effective and reactive power of the accident section, and it was confirmed that the loss occurred as the power of the accident section was greatly reduced.

The key to determining the lifetime of OLED device is how much brightness can be maintained. It can be said that there are internal and external causes for the degradation of OLED devices. The most important cause of internal degradation is bonding and degradation in the excited state due to the electrochemical instability of organic materials. The structure of OLED modeled in this paper consists of a cathode layer, electron injection layer (EIL), electron transport layer (ETL), light emission layer, hole transport layer (HTL), hole injection layer (HIL), and anode layer on a glass substrate from top to bottom. It was confirmed that the temperature generated in OLED was distributed around the maximum of 343.15 K centered on the emission layer. It can be seen that the heat distribution generated in the presented OLED structure has an asymmetrically high temperature distribution toward the cathode, which is believed to be because the sizes of the cathode and positive electrode are asymmetric. Therefore, when designing OLED, it is believed that designing the structures of the cathode and anode electrodes as symmetrically as possible can ensure uniform heat distribution, maintain uniform luminance of OLED, and extend the lifetime. The thermal distribution of OLED was analyzed using the finite element method according to Comsol 5.2.

Low road lighting is a lighting device that complements the shortcomings of existing pillar-type street lights. It is a lighting device that emits light from the side of the road surface and adjusts the luminance of the road surface like a light carpet. In this paper, to achieve full commercialization, we analyzed the luminance of the installed road surface and studied whether lighting could replace existing road lighting. In this study, the LMK (Luminance Measurement Camera) LABSOFT program was used to measure and analyze the surface luminance of road lighting, and the RELUX program was used to evaluate and analyze the simulation performance to determine light-based lighting conditions. A study was conducted to determine whether replacing pillar-type road lighting with low-level road lighting in a real environment would ensure comfortable and safe night vision for drivers at night.

The low-temperature coefficient of resistance (TCR) is a crucial factor in the development of space-grade resistors for temperature stability. Consequently, extensive research is underway to achieve zero TCR. In this study, resistors were deposited by co-sputtering nickel-chromium-based composite compositions, metals showing positive TCR, with SiO₂, introducing negative TCR components. It was observed that achieving zero TCR is feasible by adjusting the proportion of negative TCR components in the deposited thin film resistors within certain compositions. Additionally, the correlation between TCR and deposition conditions, such as sputtering power, Ar pressure, and surface roughness, was investigated. We anticipate that these findings will contribute to the study of resistors with very low TCR, thereby enhancing the reliability of space-level resistors operating under high temperatures.

This research explores the development of [100]-textured barium titanate (BaTiO₃, BT) ceramics using sodium bismuth titanate (Na_0.5Bi_4.5Ti₄O₁₅, NBiT) templates, aimed at leveraging the inherent high dielectric property of BT. However, the attempted texturing was unsuccessful, primarily due to bismuth diffusion from the NBiT templates into the BT matrix below the sintering temperature, at 1,000℃. Systematical exploration about the cause of the failure is involved and alternative approaches are proposed in detail to overcome the challenge. These findings contribute to the understanding of techniques and conditions for textured ceramic fabrication and highlight the need for further research in this area.

High-energy bandgap material silicon carbide (SiC) is gaining attention as a next-generation power semiconductor material, and in particular, SiC-based MOSFETs are developed as representative power semiconductors to increase the breakdown voltage (BV) of conventional planar structures. However, as the size of SJ (Super Junction) MOSFET devices decreases and the depth of pillars increases, it becomes challenging to uniformly form the doping concentration of pillars. Therefore, a structure with different doping concentrations segmented within the pillar is being researched. Using Silvaco TCAD simulation, a SJ VVD (vertical variation doping profile) MOSFET with three different doping concentrations in the pillar was studied. Simulations were conducted for the width of the pillar and the doping concentration of N-epi, revealing that as the width of the pillar increases, the depletion region widens, leading to an increase in on-specific resistance (Ron,sp) and breakdown voltage (BV). Additionally, as the doping concentration of N-epi increases, the number of carriers increases, and the depletion region narrows, resulting in a decrease in Ron,sp and BV. The optimized SJ VVD MOSFET exhibits a very high figure of merit (BFOM) of 13,400 KW/cm², indicating excellent performance characteristics and suggesting its potential as a next-generation highperformance power device suitable for practical applications.

This work focuses on improving the light-harvesting efficiency of thin-film silicon solar cells through innovative multi-architecture surface modifications. To create a regular optical structure, a lithographic process was performed to form it on a glass substrate through various etching processes, from Etch-1 to Etch-3. AZO was deposited on top of the structures and re-etched to create a multi-architectural surface. These surface-modified structures improved the light absorption and overall performance of the solar cell through changes in optical and physical properties, which we will analyze. In addition, we investigated the effect of post-cleaning on the etched glass structures through EDX analysis to understand the mechanism of the etching action. The results of this study are expected to provide important guidelines for the design and fabrication of solar cells and other photovoltaic devices.