IGBT (insulated gate bipolar transistor) has been widely used around the power industry as it has good switching performance and its excellent conductance. In order to reduce power loss during switch turn-on state, it is essential to reduce its resistance. However, trade off relationship between breakdown voltage and device conductance is the greatest obstacle on the way of improvement. Floating island structure is one of the solutions. Still, under optimized device condition for the best performance, improvement rate is negligible. Therefore, this paper suggests adding trench gate on floating island structure to eliminate JFET (junction field effect transistor) area to reduce resistance and activate floating island effect. Experimental result by 2D simulation using TCAD, shows 20% improvement of turn-on state voltage drop.

IGBT (insulated gate bipolar transistor) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the on state voltage drop should be lowered and the switching time should be shorted. However, there is Trade-off between the breakdown voltage and the on state voltage drop. To achieving good electrical characteristics, field stop IGBT (FS IGBT) is proposed. In this paper, 1,200 V planar gate non punch-through IGBT (planar gate NPT IGBT), planar gate FS IGBT and trench gate FS IGBT is designed and optimized. The simulation results are compared with each three structures. In results, we optain optimal design parameters and confirm excellence of trench gate FS IGBT. Experimental result by using medici, shows 40% improvement of on state voltage drop.

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.

Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. Generally most of field effect concentrations shows on the edge of power devices. Can be improve the breakdown characteristic using edge termination technology. In this paper, considering the variables that affect the breakdown voltage and optimization of parameters result for 600 V Super Junction MOSFET Field ring.

It is well known that Zinc Oxide (ZnO) is an attractive material for its various applications. ZnO has been mostly used as a transparent conducting oxide in liquid crystal displays, solar cells due to its advantages of low cost, high productivity, and excellent electrical conductivity. Notably, flexible-dye-sensitized solar cells (DSSCs) based on polyethylene terephthalate (PET) substrates require low temperature sintering processing conditions. Therefore, low temperature processing conditions have been strongly required for transparent conducting film applications. In this paper, we prepared low temperature-sintered ZnO ceramics employing Li as a sintering aid.

In this paper, we have proposed piezoelectric energy harvester employing the pillar structure with the diameter size of 500 um. So we have selected the Su-8 photo-resist and modified lithography process to manufacture the pillar structure with height above the 500 μm. Simultaneously, we tried to make a comparative study to use ceramic bulk - polymer structure In this paper, we will report the process and properties of micro pillar structure based on the PMN-PZT (Pb(Mg1/3Nb2/3)O3-PbZrTiO3) materials. Finally, We will propose a method for generating electrical energy with a piezoelectric element using vibration, an energy source can be obtained from the "clean" energy.

This article introduces the characterization of spin coated ZnO transparent conducting oxide on the flexible substrates. As a II-IV compound semiconductor, ZnO has a wide band gap of 3.37 eV with transparent properties. Due to this transparent properties, ZnO materials can be also employed as the transparent conducting electrode materials. Therefore, strong demands have been required for the transparent electrodes with low temperature processing and cheap cost. So, We will investigate the electrical property and optical transmittance of ZnO transparent conducting oxide through the 4-point probe resistivity meter, and ultraviolet-vis spectrometer Lamda 35, respectively.

In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (AFM-LO) has been performed on the implanted samples, with and without activation anneal, using an applied bias (~25 V). It has been clearly shown that the post-implantation annealing process at 1,650℃ has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.

Y1-xVO4:Eux 3+ red phosphors were synthesized with changing the mol ratios of Eu3+ ions by using the solid-state reaction method. The crystalline structure of phosphors was found to be a tetragonal system with the maximum diffraction intensity at 25.02°. The grain particles showed the truncated hexagonal patterns with a very homogeneous size distribution at 0.05 mol of Eu3+ ion. The excitation spectra of the phosphor ceramics were composed of a broad band centered at 303 nm and weak narrow multilines peaked in the range of 360-420 nm. The dominant emission spectrum was the strong red emission centered at 619 nm due to the 5D0→7F2 electric dipole transition. The experimental results suggest that the optimum doping mol ratio of Eu3+ ions for preparing the red phosphors is 0.10 mol with the asymmetry ratio of 5.21.

Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-SnO2 films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-SnO2 films. To study the post-annealing effects on the properties of TTFT, ZnO-SnO2 films were annealed at 200℃ or 400℃ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-SnO2 films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm Si3N4 film grown on 100 nm SiO2 film was used as gate dielectrics. The mobility, Ion/Ioff, interface state density etc. were obtained from the transfer characteristics of ZnO-SnO2 TTFTs.

To assess the condition of stator insulation, nondestructive and overpotential tests were performed on four high voltage motors. The stator windings under these tests have nominal ratings of 6.6 kV. After completing nondestructive tests, the AC overvoltage applied to the stator windings was gradually increasing until insulation failure in order to obtain the breakdown voltage. No. 1, No. 2, No. 3 and No. 4 of 6.6 kV motors failed near rated voltage of 18.4 kV, 19.8 kV, 19.7 kV and 21.7 kV, respectively. The breakdown voltage of four motors was higher that expected for good quality coils(14.2 kV) in 6.6 kV motors. Almost all of failures were located in a line-end coil at the exit from the core slot. The breakdown voltages and the types of defects showed strong relation to the stator insulation tests such as in the case of AC current, dissipation factor(tanδ) and partial discharge magnitude.

In general, a photoelectrode in DSSC(dye sensitized solar cell) are fabricated by using the TiO2 (Titanium dioxide) to realize high efficiency and the efficiency of DSSC is affected by the size, the shape and the property of TiO2. We synthesized the crystalline TiO2 by sol-gel method. In spite of many merits, only weakness for the sol-gel method is taking many process times. To solve this problem, we reduced the fabricating processes. The reduced process is the making process that is TiO2 sol to TiO2 powder with including of two heat treatment and two mixing. We could simplify the process by preparing TiO2 sol to TiO2 paste directly. As a result, DSSC fabrication process is simplified and we have obtained the efficiency best result 3.88% with VOC=0.71 V, JSC=8.70 mA/cm-2, and FF=62.37%, respectively.

To evaluate whether or not their product is in conformity with its drawing, today`s factories manufacturing rubber and/or plastic products use manual process. In manual conformity inspection process, a person decides conformity as comparing drawing to image of product with his eyes. The manual process is tedious and time-consuming in addition that it is impossible to automatically record various informations related to inspection. To solve such problems, this paper proposes automatic drawing conformity inspection system based on computer vision technologies such as image feature matching and bilinear interpolation. The test results show that proposed system is a lot faster when comparing with manual system.