In this paper Solar, Wind, fuel cell used in a Power conversion devices and industrial inverter motor to increase the efficiency of energy consumption, which is a core part of high-efficiency, high-voltage Trench Gate Field Stop IGBT was studied. For this purpose Planar type NPT IGBT and Planar type Field Stop IGBT have designed a basic structure designed to Trench Gate Field Stop IGBT based on the completed structure by analyzing the energy consumption of electrical characteristics, efficiency is a key part, high-efficiency and high-voltage inverter for industry regarding the optimization design for Trench Gate Field Stop IGBT.

CaMoO4:Tb3+ green phosphor powders and thin films were successfully prepared by using the solid-state reaction method and the radio-frequency magnetron sputtering technique, respectively. The crystalline structure of all phosphor powders with different Tb3+ ion concentrations was found to be a tetragonal system with the maximum diffraction intensity at 28.58°, while that of the phosphor thin films, irrespective of the type of substrate, was amorphous. As for the phosphor powders, the grain particles showed the chain-like patterns with inhomogeneous size distribution, the excitation spectra were composed of a broad band peaked at 307 nm and two small narrow bands centered at 381 and 492 nm, and the highest green emission spectrum was observed at 0.01 mol of Tb3+ ions. As for the phosphor thin films, the average transmittance exceeding 85% was measured in the 400∼1,100 nm range and the optical band gap showed a significant dependence on the type of substrate.

Power Metal Oxide Semiconductor Field Effect Transistor`s (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an “ideal switch”. The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was 3 ㎛ and P base dose was 1e15 ㎠. Also the numerical multiple 2.52 ㎠ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from 1,150℃ to 1,200℃. And then 1,150℃ diffusion time was best condition for break down voltage.

Thin-film transistors(TFTs) with silicon zinc tin oxide(SZTO) channel layer are fabricated by solution-process. The threshold voltage (Vth) shifted toward positive directly with increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy (VO). As a result, the Si act as carrier suppressor and oxygen binder in the SZTO as well as a Vth controller.

This paper presents a design and fabrication of 0.5 V two stage operational amplifier. The proposed operational amplifier utilizes body-driven differential input stage and self-cascode current mirror structure. Cadence Virtuoso is used for layout and the layout data is verified by LVS through Mentor Calibre. The proposed two stage operational amplifier is fabricated using 0.13 ㎛ CMOS process and operation at 0.5 V is confirmed. Measured low frequency small signal gain of operational amplifier is 50 ㏈, power consumption is 29 ㎼ and chip area is 75 ㎛ × 90 ㎛.

Power MOSFETs(Metal Oxide Semiconductor Field Effect Transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. We have experimental results and explanations on the doping profile dependence of the electrical behavior of the vertical MOSFET. The device is fabricated as 8.25 ㎛ cell pitch and 4.25 ㎛ gate width. The performances of device with various p base doping concentration are compared at Vth from 1.77 V to 4.13 V. Also the effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for various applications can be further optimized at power device.

We have studied structural, optical, and electrical properties of the Ga-doped ZnO (GZO) thin films being usable in transparent conducting oxides. The GZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of GZO for transparent conducting oxides, the Ar gas in sputtering process was varied as 40, 60, 80 and 100 sccm, respectively. As reaction gas decreased, the crystallinity of GZO thin film was increased, the optical bandgap of GZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in reaction gas. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with decreasing reaction gas. The structural, optical, and electrical properties of the GZO thin films were affected by Ga dopant content in GZO thin film.

ZnO crystals with octahedral shape were synthesized by thermal evaporation technique. ZnF2 powder was used as the source material. The thermal evaporation and oxidation of ZnF2 powder was carried out for 1 hr at 1,000℃ in air under atmospheric pressure. SEM images showed that the ZnO crystals produced by oxidizing ZnF2 vapor possessed a characteristic octahedral shape. XRD spectrum revealed that the ZnO octahedron had hexagonal wurtzite structure. In the room temperature photoluminescence spectrum, a strong green emission peak at around 510 nm was observed.

In this study, the W-interconnected dye-sensitized solar cell (DSSC) modules composed of a number of rectangular cells connected in series were investigated, where neighboring cells are processed in reverse. The DSSC modules, a module of dimension about 200 mm × 200 mm, were fabricated with different working electrode width ranging from 5 mm to 21 mm. The short-circuit current of the module increased as the working electrode width increased. Whereas, the decrease in the working electrode width resulted in the increase of the conversion energy efficiency, fill factor, and open-circuit voltage, which is explained by the fact that the possibility that electrons are recombined along their path on the transparent conductive oxide substrate decreases. The module with the conversion energy efficiency of 3.59% was obtained with the working electrode width of 5 mm.

For the application to the window layer of Cu(In,Ga)Se2 (CIGS) solar cell, zinc oxide(ZnO) thin film was deposited at various temperatures by in-line pulsed DC sputtering. From the structural, optical, and electrical investigation and analysis, it was possible to obtain the lower thickness, the lower resistivity, and the higher transmittance at a higher process temperature. The energy band gap of ZnO was calculated using the transmittance data and was analyzed in terms of the dependency on temperature. From the X-ray diffraction(XRD) results, it was possible to conclude that a dominant peak was found about 34.2 ～ 34.6° (111) and crystallinity was obtained at a temperature above 150℃.

This paper dealt with the radiated electromagnetic wave detection of partial discharge (PD) in oil for insulation diagnostics of oil-immersed transformers. Three types of electrode system were fabricated to simulate the insulation defects that could occur in oil-immersed transformers. Frequency components of radiated electromagnetic wave in oil was measured by broadband bi-conical antennas of 300 MHz∼2 GHz and a spectrum analyzer of 9 kHz∼3 GHz. Frequency component of electromagnetic waves from PD in oil were highly distributed at 500 MHz. From the result, a narrow-band monopole antenna with the center frequency of 500 MHz was fabricated. We could detect PD signal in insulation oil without an influence of external noise by a measurement system which consists of the prototype monopole antenna, a LNA (Low Noise Amplifier), an oscilloscope and a spectrum analyzer.

The composites composed of conducting polymer (MEH-PPV), CdTe nanoparticles, and multiwalled carbon nanotubes (MWNTs) were spectroscopically and electrically characterized in their thin films. The composite films were prepared by spray coating. These composites were prepared from the mixture solution of MEH-PPV and CdTe-embedded MWNTs, in which CdTe nanoparticles were electrostatically bound to MWNTs. UV/vis and PL spectra were analyzed to investigate the optical absorbance and emission of the composite films. In addition, their structural, electrochemical, and electrical properties were studied by transmission electron microscopy, cyclic voltammetry, and I-V measurement.

In this study, The RF magnetron sputter and evaporator was on glass substrates 30 mm × 30 mm OMO multilayer thin film structure is applied to the low-e. Structural and optical properties, a thin film was produced, the variable was placed into a variable deposition time of the oxide layer. According to the XRD measurement results there is no peak that satisfies the Bragg`s law (2dsinθ= nλ) which confirmed that it is an amorphous structure. RMS value of the results of the AFM measurement, has a roughness of less than 2 nm. transmittance measurements results, visible light region an average 80%, IR region 40% showed.

Carbon nanotubes(CNT) have excellent electrical, chemical stability and mechanical properties. These can be used in a variety of fields. MWCNT are extremely sensitive for minute changes in the ambient gas, namely, their sensing properties varies greatly with the absorption of gas such as NOx and H2. We investigate the electrical properties of CNTs and make a NOx gas sensor based on Multi-walled carbon nanotubes (MWCNT) materials. We obtained the NOx gas sensor of MWCNT based on P-type Si wafer that has the resistivity of 1.667×10-1 [Ω·cm]. We knew that the sensitivity of sensor decreased with increasing of NOx gas concentration. And the sensitivity of sensor shows the largest value at 20℃. The sensitivity of sensor decrease with increasing the temperature. Also absorption energy of NOx gas molecule on the MWCNT surface decreases with increasing concentration of NOx gas.

We developed a package of remote phosphor structure having blue LED chips and phosphors physically separated, and the characteristics were evaluated according to different classifications of phosphor coatings. Remote phosphor was produced by screen printing coating on glass substrate with phosphor content rated paste and heat treatment. After mounting Remote phosphor, which has been classified according to number of coatings, on top of blue LED chips, luminous flux, luminous efficacy, CCT and CRI were measured. The measurement results showed the most suitable characteristics of white LED package as a general light source when the content rate of phosphor in Remote phosphor was 80 wt.% with 3 layers of coatings and thickness over 12 μm.