This paper was proposed floating island power MOSFET for lowering on state resistance and the proposed device was maintained 600 V breakdown voltage. The electrical field distribution of floating island power MOSFET was dispersed to floating island between P-base and N-drift. Therefore, we designed higher doping concentration of drift region than doping concentration of planar type power MOSFET. And so we obtain the lower on resistance than on resistance of planar type power MOSFET. We needed the higher doping concentration of floating island than doping concentration of drift region and needed width and depth of floating island for formation of floating island region. We obtained the optimal parameters. The depth of floating island was 32 ㎛. The doping concentration of floating island was 5 × 1,012 ㎠. And the width of floating island was 3 ㎛. As a result of designing the floating island power MOSFET, we obtained 723 V breakdown voltage and 0.108 Ω㎠ on resistance. When we compared to planar power MOSFET, the on resistance was lowered 24.5% than its of planar power MOSFET. The proposed device will be used to electrical vehicle and renewable industry.

In this paper, piezoelectric ceramics with the composition of (Na0.525K0.4425Li0.0375)(Nb0.8975Sb0.065Ta0.0375)O3 + 0.3 wt% CoO + x CuO (0.005≤x≤0.025) (abbreviated to NKL-NST) were fabricated for ultrasonic sensor application. The effects of CuO addition and sintering on the microstructure and the piezoelectric properties of the NKL-NST ceramics were systematically studied. Excellent piezoelectric properties such as electromchanical coupling factor(kp) = 0.415, piezoelectric constant (d33) =166 pC/N and piezoelectric figure of merit d33*g33= 5.47 pm2/N were obtained from the 2.5 mol% CuO doped NKL-NST+0.3 wt%CoO ceramics sintered at 1,000℃ for 3 h.

We investigated the sintering behavior and piezoelectric properties of lead-free (K0.5Na0.5)NbO3 ceramics co-doped with excess 0.01 mol ZnO and x mol MnO2, where x was varied from 0 to 0.03. Excess MnO2 addition was found to retard the grain growth and densification during sintering. However, 0.005 mol MnO2 addition improved the piezoelectric properties of 0.01 mol ZnO added (K0.5Na0.5)NbO3 ceramics. The planar mode piezoelectric coupling coefficient, electromechanical quality factor, and piezoelectric constant d33 of 0.01 mol ZnO and 0.005 mol MnO2 added specimen were 0.40, 304, and 214 pC/N, respectively.

For the improvement of the anti-pollution properties of porcelain electrical insulators, in this study, we have applied the functional film to the surface of insulator. The functional films were coated on the ceramic substrates which components were like the porcelain electrical insulator. The coating material was applied to ceramic substrate by spray coating method and then the film was cured at around 300oC for 10 minutes with different gas ambient, such as O2, N2, and only vacuum. We have measured the contact angle of the coated surface, and obtained the lowest angle (8.9o) and a strong hydrophilic property at vacuum condition. The anti-pollution properties were measured, revealing that as the contact angle decreased, the anti-pollution properties improved. The mechanical hardness and adhesion were both excellent regardless of the annealing ambient.

The surface of Mg alloy, AZ31 and AZ91, were treated by PEO (plasma electrolytic oxidation) in Na-P system electrolyte, with different applied voltage and time. Thickness, roughness and X-ray crystallographic analysis revealed several results. The more applied time and voltage of PEO treated, the thicker oxidized surface coating layer were covered. And surface roughness increased with the thickness of oxidized layer. It was thought that when oxide layer grew, resistivity and breakdown voltage increased with the thickness of layer, and then, the energy of micro plasma need to be higher then before. So, it made craters and pores of surface become greater, which were responsible for the coarse surface.

Effect of electrolyte composition and concentration on PEO coating layer were investigated. Mg alloy, Surface of AZ31 and AZ91 were oxidized using PEO with different electrolyte system, Na-P and Na-Si. and applied voltage and concentration. We measured thickness, roughness, X-ray crystallographic analysis and breakdown voltage of the oxidized layer. When increasing concentration of electrolyte, the thickness of oxide layer also increased too. And roughness also increased as concentration of electrolyte increasing. Breakdown voltage of coated layer showed same behavior, the voltage goes high as increasing thickness of coating layer, as increasing concentration of electrolyte, and increasing applied voltage of PEO. Mg2SiO4 phase were observed as well as MgO.

A three-electrode type reflective display (electronic paper) is designed to apply an independent electric field to each three electrodes of the cell including two electric-type of particles and electrically neutral color fluid, so single color realization is possible. In particular, the movement of particles and optical properties are decided by the electric field between two electrodes on the lower substrate. So, the effect of electric field by the distance between two electrodes on the lower substrate is studied with electrode spacing with 10 μm, 15 μm, 20 μm, and 25 μm. By our experimentation, the driving voltage induces more reliable movement of charged particles and the optical properties as compared with the threshold voltage. We ascertain the single color realization and non-inverted particle separation is possible. So the more desirable optical properties are observed in case of the short electrode like 10 μm.

The improvement of irradiation intensity and irradiation uniformity is essential for large area and high power UVA light source application. In this study, large number of chips bonded by micro soldering technique were driven by low current, and current limiting diodes were configured to supply constant current to parallel circuits consisting of large number of series strings. The dimension of light source module circuit board was 350 × 90 mm2 and 16,650 numbers of 385 nm flip chip LEDs were used with a configuration of 90 parallel and 185 series strings. The space between LEDs in parallel and series strings were maintained at 1.9 mm and 1.0 mm distance, respectively. The size of the flip chip was 750 × 750 μm2 were used with contact pads of 260 × 669 μm2 size, and SAC (96.5 Sn/3.0 Ag/0.5 Cu) solder was used for flip chip bonding. The fabricated light source module with 7.5 m A supply current showed temperature rise of 66℃, whereas irradiation was measured to be 300 mW/cm2. Inaddition, 0.23% variation of the constant current in each series string was demonstrated.

ZnO thin films have wide application areas due to its versatile properties as transparent conductors, wide-bandgap n-type semiconductors, gas sensor materials, and etc. We have performed a systematic investigation on ultraviolet-assisted CVD (chemical vapor deposition) method. Ultraviolet irradiation during the deposition of ZnO causes chemical reduction on the growing surface; which results in the reduction of the deposition rate, increase in the surface roughness, and decrease of the electrical resistivity. These effects produce larger characteristic variation with various deposition conditions in terms of surface morphology and optical/electrical properties compared to normal CVD deposited ZnO thin films. This versatile controllability of ultraviolet-assisted CVD can provide a larger processing options in the fabrication of nano-structured materials and flexible device applications.

In this study, we investigated the color change of the normal light gray granite as the high value color granite. By coating the metal catalyst liquid on the surface of granite stone, the metal particles were penetrated into the granite and the color of granite was changed permanently through the annealing treatment. To increase penetration depth into the granite, we used DC (direct current) bias. Two kinds of bias were used such as DC bias and pulse DC bias. And the penetration time was changed as 30 and 60 min. In all cases, the color granite were successfully obtained. Regardless of the catalyst reaction time, the penetration depth was increased by using the bias treatment. We obtained a penetration depth of 21 mm with the DC pulse bias during 60 min.

Currently, power conversion system which converts AC to DC Power is applied in domestic urban railway. The diode rectifier is used in most of them. However the diode rectifier can not control the output voltage and can not regenerate power as well. On the other hand, PWM (pulse width modulation) converter using IGBT (isolated gate bipolar transistor) can control output voltage, allowing it to reduce the output voltage drop. Moreover the Bi-directional conduction regenerates power which does not require additional device for power regeneration control. This paper compared the simulation results for the DC power supply system on both the diode rectifier and the PWM converter. Under the same load condition, simulation circuit for each power supply system was constructed with the PSIM (performance simulation and modeling tool) software. The load condition was set according to the resistance value of the currently operating impedance of light rail line, and the line impedance was set according to the distance of each substations. The train was set using a passive resistor. PI (proportional integral) controller was applied to regulate the output voltage. PSIM simulation was conducted to verify that the PWM Converter was more efficient than the diode rectifier in DC Traction power supply system.

Effects of SiOx or C shells on electrochemical properties of Si nanoparticles were investigated. SiOx shells with thickness of 10~15 nm were formed on homogeneously crystalline Si nanoparticles. Incase of Si-C nanoparticles, there were 30~40 layers of C with a number of defects. Li-ion batteries were fabricated with the above-mentioned nanoparticles, and their electrochemical properties were measured. Pristine Si shows a high IRC (initial reversible capacity) of 2,517 mAh/g and ICE (initial columbic efficiency) of 87%, but low capacity retention of 22%, respectively. SiOx shells decreased IRC (1,534 mAh/g) and ICE (54%), while the retention increased up to 65%, which can be explained by irreversible phases such as LiO2 and Li2SiO3. C shells exhibited no differences in IRC and ICE compared to the pristine Si but an enhanced retention of 54%, which might be from proper defect structures.