Oxide semiconductor gas sensors are widely used for detecting toxic, explosive, and flammable gases due to their simple structure, cost-effectiveness, and potential integration into compact devices. However, their reliable gas detection is hindered by a longstanding issue known as humidity dependence, wherein the sensor resistance and gas response change significantly in the presence of moisture. This problem has persisted since the inception of oxide semiconductor gas sensors in the 1960s. This paper explores the root causes of humidity dependence in oxide semiconductor gas sensors and presents strategies to address this challenge. Mitigation strategies include functionalizing the gas-sensing material with noble metal/transition metal oxides and rare-earth/rare-earth oxides, as well as implementing a moisture barrier layer to prevent moisture diffusion into the gas-sensing film. Developing oxide semiconductor gas sensors immune to humidity dependence is expected to yield substantial socioeconomic benefits by enabling medical diagnosis, food quality assessment, environmental monitoring, and sensor network establishment.

Oxygen evolution reaction is a critical bottleneck for the development of efficient electrochemical hydrogen production because of its sluggish reaction. Among various catalysts, transition metal-based layered double hydroxide has drawn significant attention due to their excellent catalytic properties and cost-effectiveness. This paper begins with basic crystal structures, and then conventional adsorbate evolution mechanism of layered double hydroxide. Strategies for enhancing catalytic properties based on adsorbate evolution mechanism and lattice oxygen mechanism that could surpass theoretical limit of adsorbate evolution mechanism are discussed. This paper ends with a brief discussion on the challenges and future directions of layered double hydroxide-based oxygen evolution reaction catalysts.

This paper delves into the application of the short-wave infrared (SWIR) region, with a focus on the synthesis and optical characteristics of silver sulfide (Ag₂S) nanostructures. SWIR offers advantages such as reduced damage to biological tissues and enhanced optical transparency, making it valuable across various domains. The study introduces three distinct synthesis methods, each showcasing the ability to obtain nanostructures with improved optical properties. These research findings open up the possibility of providing tailored solutions in detection, imaging, and other applications by controlling the size and ligands of Ag2S nanoparticles. This paper provides new insights into the utilization of Ag₂S in the SWIR region, which is expected to foster advancements in future technologies.

The Microplotter system with a fluid dispensing method, sprays fluid based on ultrasonic pumping through piezoelectric devices. This technique can possible for various materials with a wide range of viscosities to be printed in microscale. In this paper, we introduces dispenser printing technology as well as aim to understand and apply various processes using the equipment. In addition, we will explain how to optimize the equipment by adjusting parameters such as spray intensity, tip height during printing, and patterning speed. By utilizing Microplotter’s advantage of being compatible with a wide range of fluids, including metal nanoparticles, carbon nanotubes, DNA, and proteins, it is expected to be used in various fields such as printed electronics, biotechnology, and chemical engineering.

An irradiator is developed using two UVA wavelength ranges of SMD LEDs as a curing light source. This module has dimensions of 545×111×300 mm³ and is equipped with a TIR bar-shaped lens made of PDMS silicone resin. The developed irradiator offers high uniformity, with 89% in the centerline of the horizontal axis direction, for two different wavelength ranges of 365 nm and 385 nm. The radiation intensity from the light source module shows highly directional characteristics, and the irradiator provides a maximum irradiance of 1,634 mW/cm² at a working distance of 50 mm. During the initial 5 minutes of operation, the irradiance experiences a rapid decrease. However, this issue is addressed by optimizing the LED’s current reduction characteristics and managing the Transistor’s temperature rise in the constant current circuit. After continuous operation for approximately 60 minutes. The highest temperature, near the central part of the irradiating surface, reaches 69.7℃, while the lowest temperature, near the edges, is 41.1℃.

Next-generation wide-bandgap semiconductors such as SiC, GaN, and Ga₂O₃ are being considered as potential replacements for current silicon-based power devices due to their high mobility, larger size, and production of high-quality wafers at a moderate cost. In this study, we investigate the gradual modulation of chemical composition in multi-stacked metal oxide semiconductor thin films to enhance the performance and bias stability of thin-film transistors (TFTs). It demonstrates that adjusting the Ga ratio in the indium gallium oxide (IGO) semiconductor allows for precise control over the threshold voltage and enhances device stability. Moreover, employing multiple deposition techniques addresses the inherent limitations of solution-processed amorphous oxide semiconductor TFTs by mitigating porosity induced by solvent evaporation. It is anticipated that solution-processed indium gallium oxide (IGO) semiconductors, with a Ga ratio exceeding 50%, can be utilized in the production of oxide semiconductors with wide band gaps. These materials hold promise for power electronic applications necessitating high voltage and current capabilities.

In this study, we fabricated single grain YBCO bulk superconductors with control of the distance between the seed and the upper surface of the YBCO compacts. The magnetic levitation force of the YBa₂Cu₃O₇ superconducting bulk, which corresponds to the energy amount of the superconducting bulk, was measured to be 32.634 N at the center of the bulk where the seed was placed. Under field cooling conditions, a capture magnetic force of 2.17 kG was observed at the center of the bulk. The trapped magnetic force curve corresponding to the stability of the superconducting bulk means that the superconducting specimens were well grown in the form of single grains.

Mn-doped Pb(In_1/2Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (Mn:PIN-PMN-PT) single crystals, which exhibit improved phase transition temperatures and coercive field properties compared to Pb(In_1/2 Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (PIN-PMNPT) single crystals, are expected to be utilized in high-power acoustic transducers. Bridgeman method, growing single crystals along the axial direction from melt, is most widely used method for single crystal growth with large size and high quality. However, single crystal boules grown by the Bridgeman method demonstrate a PT compositional variation, giving rise a distribution of crystal structure and material properties along the growing axis. To employ piezoelectric single crystals grown by the Bridgeman method for acoustic transducers, it is essential to investigate their overall property distribution. In this study, the compositional distribution and property variation of Mn:PIN-PMN-PT single crystals grown by the Bridgeman method was investigated. Measured compositional distribution of PT was from 29% to 32.5% in the Rhombohedral crystal region of the boule. Two types of specimen, [011]-poled Mn:PIN-PMN-29PT and Mn:PIN-PMN-32PT single crystals, were fabricated and tested to obtain full property variation at both ends of the Rhombohedral crystal region. The properties related to the 32 directional vibration mode and the properties related to high-power driving were measured to confirm the overall distribution of properties by composition.

This study proposes an innovative methodology for developing flexible printed circuit boards (FPCBs) capable of conforming to three-dimensional shapes, meeting the increasing demand for electronic circuits in diverse and complex product designs. By integrating a traditional flat plate-based fabrication process with a subsequent three-dimensional thermal deformation technique, we have successfully demonstrated an FPCB that maintains stable electrical characteristics despite significant shape deformations. Using a modified polyimide substrate along with Ag flake-based conductive ink, we identified optimized process variables that enable substrate thermal deformation at lower temperatures (~130℃) and enhance the stretchability of the conductive ink (ε ~30%). The application of this novel FPCB in a prototype 3D-shaped sensor device, incorporating photosensors and temperature sensors, illustrates its potential for creating multifunctional, shape-adaptable electronic devices. The sensor can detect external light sources and measure ambient temperature, demonstrating stable operation even after transitioning from a planar to a three-dimensional configuration. This research lays the foundation for next-generation FPCBs that can be seamlessly integrated into various products, ushering in a new era of electronic device design and functionality.

The polymer crystallization process, promoting the formation of ferroelectric β-phase, is essential for developing polyvinylidene fluoride (PVDF)-based high-performance piezoelectric energy harvesters. However, traditional high-temperature annealing is unsuitable for the manufacture of flexible piezoelectric devices due to the thermal damage to plastic components that occurs during the long processing times. In this study, we investigated the feasibility of introducing a flash lamp annealing that can rapidly induce the β-phase in the PVDF layer while avoiding device damage through selective heating. The flash lightirradiated PVDF films achieved a maximum β-phase content of 76.52% under an applied voltage of 300 V and an on-time of 1.5 ms, a higher fraction than that obtained through thermal annealing. The PVDF-based piezoelectric energy harvester with the optimized irradiation condition generates a stable output voltage of 0.23 V and a current of 102 nA under repeated bendings. These results demonstrate that flash lamp annealing can be an effective process for realizing the mass production of PVDF-based flexible electronics.

Piezoelectric ceramics play an important role in various electronic applications. However, traditional ceramics are difficult to be used in some complicated structures, due to their low flexibility and high brittleness. To solve this problem, this study prepared and investigated ceramic/polymer composites that can utilize a good flexibility of polymers. Polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) and 0.77(Bi_1/2Na_1/2)TiO₃-0.23SrTiO₃ (BNST23) ceramics were selected to fabricate the composites. Ceramic/polymer composites were prepared using various volume fractions of BNST23 ceramics. The distribution of piezoceramic particles in BNST23/PVDF-TrFE composites was investigated using optical microscopy (OM) and scanning electron microscopy (SEM). The dielectric and piezoelectric properties of the composites were significantly influenced by the volume fraction of the piezoelectric ceramics. As a result, the highest piezoelectric constant (d33) of 56 pC/N was obtained in a composites with 70% volume fraction of BNST23 ceramics. Accordingly, it is expected that BNST23/PVDF-TrFE composites can be applied to various sensor applications.

This study investigates the post-thermal treatment effects on the efficiency of silicon heterojunction solar cells, specifically examining the influence of annealing on p-type microcrystalline silicon oxide and ITO thin films. By assessing changes in carrier concentration, mobility, resistivity, transmittance, and optical bandgap, we identified conditions that optimize these properties. Results reveal that appropriate annealing significantly enhances the fill factor and current density, leading to a notable improvement in overall solar cell efficiency. This research advances our understanding of thermal processing in siliconbased photovoltaics and provides valuable insights into the optimization of production techniques to maximize the performance of solar cells.

The expansion of lithium-ion battery usage beyond portable electronic devices to electric vehicles and energy storage systems is driven by their high energy density and favorable cycle characteristics. Enhancing the stability and performance of these batteries involves exploring solid electrolytes as alternatives to liquid ones. While sulfide-based solid electrolytes have received significant attention for commercialization, research on amorphous-phase glass solid electrolytes in oxide-based systems remains limited. Here, we investigate the glass transition temperatures and sintering behaviors by changing the molecular ratio of Li₂O/B₂O₃ in borate glass comprising Li₂O-B₂O₃-Al₂O₃ system. The glass transition temperature is decreasing as increasing the amount of Li₂O. When we sintered at 450℃, just above the glass transition temperature, the samples did not consolidate well, while the proper sintered samples could be obtained under the higher temperature. We successfully obtained the borate glass ceramics phases by melt-quenching method, and the sintering characteristics are investigated. Future studies could explore optimizing ion conductivity through refining processing conditions, adjusting the glass former-to-modifier ratio, and incorporating additional Li salt to enhance the ionic conductivity.

Organic photovoltaic (OPV) devices have attracted attention due to their high efficiency and simple manufacturing process. Applying an overlayer to OPV devices is one way to improve their performance because it can improve charge extraction and suppress vertical phase separation. In addition, dichloromethane (DCM) was used as an orthogonal solvent to minimize the effect on other layers. However, an coating problems due to the use of DCM were found, which affects surface morphology as rough or peeling. Additional research efforts are needed to solve these problems, and optimal results are expected to be obtained by utilizing various buffer layers or selective organic solvents.

(Bi_1/2Na_1/2)TiO₃(BNT) piezoelectric ceramics are one of the promising materials that can replace Pb(Zr, Ti)O₃(PZT) piezoelectric ceramics due to the high electromechanical strain properties. However, it is still difficult to use practical applications because the required electric field for inducing electromechanical strain is relatively higher than that of PZT ceramics. To overcome this problem, it has been intensively studied on doping impurity or modifying other ABO₃ for BNTbased piezoelectric ceramics. Therefore, this study investigated the effects of La₂O₃ doping on the phase transition behavior and electromechanical strain properties in BNT-SrTiO₃ (BNT-ST) lead-free piezoelectric ceramics. In the case of the temperaturedependent dielectric properties, it was confirmed that a phase transition from ferroelectrics to relaxors is induced with increasing La₂O₃ content. As a result, the electromechanical strain properties of BNT-ST ceramics were improved. The highest Smax/Emax value corresponding to 300 pm/V was obtained at 2 mol% La₂O₃-dopped BNT-ST ceramics. Accordingly, this study successfully demonstrated that La₂O₃ doping is effective on the inducing phase transition from ferroelectrics to relaxors and the improving electromechanical strain properties of BNT-ST lead-free piezoelectric ceramics.