Quantum dots (QDs) offer size-dependent tunability across the infrared to ultraviolet range with narrow emission linewidths and high color purity, making them highly attractive for next-generation light-emitting devices. Quantum dot lightemitting diodes (QLEDs) further combine precise spectral control with scalable, low-cost solution processing, positioning them as strong candidates for wearable, stretchable, and AR/VR display technologies. However, conventional single-emission QLEDs suffer from charge imbalance, efficiency roll-off, and limited operational lifetime, necessitating new device architectures. Tandem QLEDs, which vertically stack multiple emissive layers (EMLs) connected by charge generation layers (CGLs), provide a compelling solution by enabling higher luminance, improved charge balance, and longer lifetime at equivalent current density. The CGL serves as the interfacial region mediating charge injection and generation between adjacent EMLs, directly determining device efficiency and stability. This review highlights recent progress in CGL engineering, categorizing representative designs into planar heterojunction, inorganic-based, and dipole-based configurations. Comparative analysis of their formation mechanisms, material systems, and process compatibilities reveals evolving charge-control strategies that extend beyond material selection. These insights establish design principles for next-generation tandem QLEDs with enhanced efficiency, durability, and manufacturability.

Micro-LEDs, which have a chip size of less than 100 × 100 μm², have been potential candidates for conventional LCDs and OLEDs due to their high optical power, outstanding stability, and nanosecond response time. However, Micro-LED chips are fabricated only on limited substrates due to the high-temperature metal-organic chemical vapor deposition process and lattice-mismatch issues. Therefore, the fabrication of Micro-LED displays requires complex processes such as chip fabrication, transfer, bonding, and repair. Especially, Micro-LED transfer and bonding have been critical challenges for the Micro-LED display commercialization. Here, recent advances in the transfer and bonding of Micro-LEDs are introduced, and novel Micro- LED display fabrication methods are reviewed to provide a practical outlook for both mass production and commercialization of Micro-LED displays.

Nozzle-printing dispensers, which utilize air pulsation as a dispensing principle, operate by transmitting air pressure to the liquid to push a constant amount of liquid. Nozzle printers have the advantage of precisely controlling energy based on liquid properties, such as viscosity and surface tension, enabling the precise application of liquid at specific locations and quantities. This study introduces a printing process sequence using a nozzle printer equipped with a high-resolution vision alignment system. It compares printing patterns according to key process variables (jet pressure, tip height, and travel speed) that affect coating quality. Experimental results showed that a coating standard deviation of 2.14 μm was achieved at a moving speed of 20 mm/s and a nozzle height of 0.2 mm, resulting in the most stable and uniform coating quality. Through these experiments, optimal conditions were identified based on factors such as coating width, uniformity, and presence of discontinuity, and the effects of these conditions on the precision manufacturing process are discussed.

Perovskite light-emitting diodes (PELEDs) are emerging as promising candidates for next-generation displays, thanks to their narrow full width at half maximum and low-cost solution processing capabilities. Blue PeLEDs are essential for achieving a full-color gamut; however, efficiency and stability challenges limit their practical use. A primary bottleneck arises from interfacial issues between the perovskite emissive and charge transport layers. This review summarizes the key interfacial challenges hindering the performance of blue PeLEDs and highlights recent advances in interfacial engineering strategies. By focusing on interfacial engineering between the hole-transport layer and perovskite, this review compares different strategies and outlines future directions for developing high-performance blue light-emitting devices.

In this study, Y₂O₃ thin films were deposited on Si(100) wafers using an RF sputtering system with a Y₂O₃ target. The Y₂O₃ thin film was confirmed to have a thickness of 227 nm/min and a uniformity of 1.34% at a substrate temperature of 400℃. All samples were annealed at 600, 800, and 1,000℃ for 1 hour in an O₂ gas atmosphere using the furnace. The analysis of the XRD patterns revealed that the peak intensity increased with annealing up to 800℃, but decreased when the annealing temperature was raised to 1,000℃. The XPS analysis confirmed the onset of crystallization at 800℃, in agreement with the trends observed in the XRD results. According to the AFM results, the surface became slightly smoother after heat treatment, as indicated by a reduced RMS roughness of approximately 1.792 nm.

(La_1-xBi_xSr_0.3)FeO₃ ceramics exhibiting excellent magnetoresistance were synthesized via the conventional solid-state reaction method. The structural and electrical properties were investigated as a function of Bi³⁺ content to evaluate their potential application as temperature sensors. And the sintering temperature and time were 1,200℃ and 4 h, respectively. The structural and electrical properties were investigated as a function of Bi content. With increasing Bi substitution, a slight enhancement in both average grain size and relative sintered density was observed. In particular, the specimen with x = 0.3 exhibited an average grain size of approximately 0.82 μm. All samples demonstrated negative temperature coefficient of resistance (NTCR) behavior, and the electrical resistivity decreased with increasing Bi content. The resistivity of the (La_0.4Bi_0.3Sr_0.3)FeO₃ composition was 4.68 mΩ-cm at 25°C. Additionally, the temperature coefficient of resistance (TCR) and the B_25/75-value, which quantify the sensitivity of resistivity to temperature variations, were found to increase with Bi content. (La_0.4Bi_0.3Sr_0.3)FeO₃ sample exhibited a TCR of 0.43%/°C and a B_25/75-value of 1,096 K at room temperature. The electrical conduction mechanism of the (La_1-xBi_xSr_0.3)FeO₃ system was well described by the small polaron hopping model, wherein thermally activated charge carriers hop between localized Fe-O-Fe sites via electron-phonon interactions.

e investigated the effects of post-annealing in vacuum, nitrogen, and hydrogen atmospheres on the structural, electrical, and optical properties of 600 nm thick Al-doped ZnO (ZnO:Al) thin films deposited by RF magnetron sputtering at room temperature. Post-annealing in hydrogen atmosphere at 400℃ for 1 hour showed the most significant improvement in electrical properties. Resistivity decreased from 9.11×10⁻³ to 1.4×10⁻³ Ω·cm, electron mobility increased from 4.11 to 18.23 cm²/V·s, and electron carrier concentration increased from 1.63×10²⁰ to 4.85×10²⁰ cm⁻³. In contrast, post-annealing in vacuum and nitrogen atmospheres resulted in degraded electrical properties due to oxygen and nitrogen chemisorption at grain boundaries. The enhancement in hydrogen-annealed films was attributed to the formation of additional oxygen vacancies and desorption of adsorbed oxygen species from grain boundaries. All films maintained excellent optical transparency of 80-90% in the visible range. The optical bandgap exhibited a blue-shift from 3.365 eV to 3.624 eV due to the Burstein-Moss effect induced by the increased electron carrier concentration. These results confirmed that hydrogen atmosphere post-annealing is the most effective method for enhancing the electrical conductivity of ZnO:Al thin films while maintaining high optical transparency.

AlGaN/GaN High Electron Mobility Transistors (HEMTs) are emerging as next-generation semiconductors optimized for high-power and high-frequency applications, with their performance highly dependent on the surface and interface quality of the AlGaN/GaN structure. In particular, the 2-Dimensional Electron Gas (2DEG) formed in the AlGaN layer is susceptible to trapping by surface defects, which degrades electrical characteristics and makes the device vulnerable to degradation. In this study, we propose an approach to enhance device reliability and performance by forming a gallium oxynitride (GaON) interfacial layer through O₂ plasma treatment on the AlGaN surface. This method effectively suppresses interface defects, resulting in improved electrical properties such as reduced interface trap density (Dit), threshold voltage (Vth) shift, increased drain current density (Id), and enhanced transconductance density (gm). Furthermore, this surface treatment demonstrates the potential for process simplification by improving the electrical characteristics of power semiconductor devices without the need for complex deposition steps.

To ensure high-voltage stability and thermal resistance of insulation paper used in transformers, this study evaluated the structural and electrical properties of four types of insulation paper samples fabricated using unbleached kraft pulp (UKP). The samples were prepared under controlled conditions with different freeness levels (300-700 ml). Tensile strength, dielectric constant, breakdown strength (dry and oil), volume resistivity, water absorption, and oil absorption were quantitatively measured. The sample with a beating degree of 300 exhibited the highest breakdown strength (53.85 kV/mm) and volume resistivity (1.49×10¹⁶ Ω·cm), whereas the samples with higher beating intensity showed improved fiber bonding and densification. These findings demonstrate the practical applicability of UKP-based insulation paper as a high-performance, eco-friendly insulating material for transformer systems, providing a scientific foundation for process optimization in insulation paper design.

Silicon carbide (SiC) power devices are attracting increasing attention for high-voltage and high-efficiency applications due to their superior material properties. However, achieving an optimal trade-off between specific on-resistance (Ron,sp) and breakdown voltage (BV) remains a key design challenge in planar MOSFET structures. In this study, twodimensional TCAD simulations were conducted to investigate the impact of varying the doping concentrations of the P-well (from 3 × 10¹⁷ to 6 × 10¹⁷ cm^-3) and JFET regions (from 1 × 10¹⁶ to 7 × 1016 cm^-3) on the electrical characteristics of 2.4 kVclass planar SiC MOSFETs. To maintain comparable BV conditions for 2.4 kV operation, two groups with P-well doping concentrations of 4.5 × 10¹⁷ cm^-3 and 5.3 × 1017 cm^-3 were analyzed and compared. When the P-well and JFET doping concentrations were 4.5 × 10¹⁷ cm^-3 and 1.5 × 10¹⁶ cm^-3, respectively, the simulated Ron,sp and BV were 1.41 mΩ·cm² and 3,150 V. In contrast, with P-well and JFET doping concentrations of 5.3 × 10¹⁷ cm^-3 and 5.0 × 10¹⁶ cm^-3, the Ron,sp was reduced to 1.31 mΩ·cm² while the BV slightly increased to 3,200 V. Based on these results, an optimized device structure was proposed, demonstrating its potential for integration into high-voltage SiC-based power systems. This study provides practical design insights and is expected to contribute to the advancement of wide bandgap semiconductor technologies for next-generation power electronics.

Metal halide perovskites (MHPs) have attracted attention as new display materials due to their excellent optical properties, but their application is limited by the complexity of conventional synthesis methods and the film formation processes. As an alternative, color conversion film fabricated via the aerosol deposition (AD) process using CsPbBr₃/Al₂O₃ powder, a ceramic matrix-based MHP composite, has expanded the practical utility of MHPs by simplifying both the synthesis and film formation steps. Nevertheless, the hammering effect that occurs during the AD process can damage the MHP crystal structure, leading to degradation of its optical properties. Therefore, in this study, to overcome the problem of optical degradation, we compared the structural and photoluminescence (PL) properties of films fabricated by adding polytetrafluoroethylene (PTFE), a material with a buffering effect, to the CsPbBr₃/Al₂O₃ starting powder at mass ratios of 0, 0.1, 0.5, 1, and 2 wt% to mitigate the hammering effect. The film containing 1 wt% PTFE exhibited the highest PL performance, achieving a luminous efficiency of 52.1 lm/W. This improvement is attributed to PTFE providing an optimal buffering effect without forming aggregates on the film surface. These results further enhance the applicability of AD-based color conversion films and are expected to contribute to the development of high-resolution display technologies.

κ-phase Ga₂O₃ is a wide-bandgap semiconductor that has attracted attention for power and optoelectronic device applications. However, its crystal quality and optical properties are highly dependent on the growth temperature, which motivates the need for a systematic study. In this work, κ-Ga₂O₃ thin films were grown on AlN/sapphire templates using mist-CVD at different temperatures. At lower temperatures (400℃), films exhibited incomplete crystallization and partial opacity, whereas higher growth temperatures (500-700℃) produced transparent films with improved properties. The bandgap was found to increase with temperature, consistent with reported values for 600-700℃, and XRD/XRC analysis confirmed that crystal quality improved with higher growth temperature. AFM analysis further revealed reductions in surface roughness and grain size variation at elevated temperatures. These findings indicate that an optimal growth window of 600-700℃ enables high-quality κ-Ga₂O₃ films, with potential implications for integrating this material on other hexagonal substrates such as SiC and GaN.

Silicon carbide (SiC), with its wide bandgap and strong resistance to radiation and thermal conditions, is a promising material for ultraviolet (UV) photodetector applications under harsh environments. In this study, porous SiC thin films with thicknesses of 20, 50, and 80 nm were fabricated on 4H-SiC substrates using aerosol deposition (AD), which enables roomtemperature film formation. The device with a 50 nm-thick film exhibited the highest photoresponse under UV-C illumination (260 nm), achieving a maximum photo-to-dark current ratio (PDCR) of 205.2, a responsivity of 0.058 A/W, an external quantum efficiency (EQE) of 27.71%, and a specific detectivity (D*) of 7.9×10¹¹ Jones. These results are attributed to an optimized balance between photon absorption and carrier transport in the porous structure. The findings confirm the potential of ADfabricated porous SiC films for highly sensitive and scalable UV photodetector applications.

Ceramic thin plates are widely utilized in various advanced technologies, such as fuel cells and heat dissipation substrates, due to their high mechanical strength and thermal conductivity. However, the trend of thinning ceramic plates increases warpage, which can critically affect product quality and reliability. Therefore, understanding and accurately measuring this warpage has become increasingly important. In this study, a non-contact measurement method, the light sectioning technique, was applied to measure the warpage of thin ceramic plates with a half-cell (anode/electrolyte) structure for solid oxide fuel cells (SOFC) by varying their area and thickness. The relationship between the physical properties of the thin plates and the warpage was analyzed. Additionally, a comparative analysis was conducted to evaluate warpage errors caused by compressive loads during the traditional contact measurement process. Finally, to verify the reliability of the non-contact measurement method, four types of non-contact measurement techniques - light sectioning technique, laser displacement measurement, optical confocal technique, and white-light interferometry technique - were used to compare warpage data by orientation. The results were also compared with those from contact measurement methods to analyze the average warpage values. Through this, the superiority and high reliability of the non-contact measurement method were demonstrated.