In this paper, a high voltage current sensing circuit for boost converter is designed and verified by Cadence SPECTRE simulations. The current mirror pair, power and sensing metal-oxide semiconductor field effect transistors (MOSFETs) with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side lateral-diffused MOS transistor (LDMOST) switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35 μm BCD process show that current sensing is accurate and the pulse frequency modulation (PFM) boost converter using the proposed current sensing circuit satisfies with the specifications.

Gallium nitride (GaN), wide bandgap semiconductor, has attracted much attention because they are projected to have much better performance than silicon. In this paper, effects of design parameters change of GaN power static induction transistor (SIT) on the electrical characteristics (breakdown voltage, on resistance) were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get power GaN SIT that has 600 V class breakdown voltage. As a result, we could get optimized 600 V class power GaN SIT that has higher breakdown voltage and lower On resistance with a thin (a several micro-meters) thickness of the channel layer.

In this paper, Fin-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory are fabricated and the electrical characteristics are analyzed. Compared to the planar-type SONOS devices, Fin-type SONOS devices show good short channel effect (SCE) immunity due to the enhanced gate controllability. In memory characteristics such as program/erase speed, endurance and data retention, Fin-type SONOS flash memory are also superior to those of conventional planar-type. In addition, Fin-type SONOS device shows improved SCE immunity in accordance with the decrease of Fin width. This is known to be due to the fully depleted mode operation as the Fin width decreases. In Fin-type, however, the memory characteristic improvement is not shown in narrower Fin width. This is thought to be caused by the Fin structure where the electric field of Fin top can interference with the Fin side electric field and be lowered.

The TiO2/ZnS/Ag/ZnS/TiO2 multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in TiO2/Ag/TiO2 structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between TiO2 and Ag to prevent the oxidation of Ag layer efficiently in TiO2/ZnS/Ag/ZnS/TiO2 structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the TiO2/Ag/TiO2 multilayered films without ZnS as an antioxidant layer. The 3 times stacked TiO2/ZnS/Ag/ZnS/TiO2 films have low sheet resistance of 1.22 Ω/□ and luminous transmittance was as high as 62% in the visible ranges.

ZnO with the wide band gap near 3.37 eV is typically an n-type semiconductor in which deviation from stoichiometry is electrically active. It was known that the films with a resistivity of the order of 10-4 Ωcm is not easy to obtain. In order to improve electrical characteristic of ZnO, we added 1, 3, 5 wt% Ga element in ZnO. The Ga-doped ZnO (GZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to 500℃. X-ray diffraction (XRD) patterns of GZO films showed preferable crystal orientation of (002) plane. The lowest resistivity of the GZO films was 8.9×10-4 Ωcm. GZO films significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.

A measurement method of the particle-based reflective display is proposed, estimated, and compared with reported method. The reflectivity measurement by previous studies is simply obtained by integrating sphere, but it has a limitation for the estimation of real moving particles because its data include surface reflection and incomplete attachment on electrodes. To get the number of real moving particles, the area by attached particles on the electrodes is calculated at microscopic signals. The moving particles on subthreshold voltage are observed and this fluctuational variation of surface on subthreshold voltage gives a tip to understand the driving mechanism. By this measurement we ascertained the relationship of a particle layer and real driving particles, and the feasibility of observation and estimation for moving color particles, which were measured by the reflectivity and CIE (Commission Internationale de I`Eclairage) system of color specification at previous studies.

We fabricated red and blue organic light emitting display (OLEDs) which had the two kinds of multi-structure of ITO/HIL/HTL/EML/ETL/LiF/Al and ITO/HIL/HTL/EML/ETL/LiF/Al/LiF. In the case of red OLED that had LiF/Al/LiF structure compared to LiF/Al structure, the current density increased from 4.3 ㎃/㎠to 7.3 ㎃/㎠, and the brightness increased from 488 ㏅/㎡to 1,023 ㏅/㎡at 7.0 V, and as a result the current efficiency was improved from 11.28 cd/A to 13.95 cd/A. Also in the case of blue OLED that had LiF on Al cathode layer, the current density increased from 1.2 ㎃/㎠to 1.8 ㎃/㎠, and the brightness increased from 45 ㏅/㎡to 85 ㏅/㎡at 7.0 V, and as a result the current efficiency was improved from 3.69 cd/A to 4.82 cd/A. Through these experimental results it could be suggested that the LiF layer formed on Al prevents the oxidation of Al surface, and the electrode resistance become low with increase of supplied electrons, therefore the brightness and the efficiency are improved from the influence to the well-balanced bonding of electron and hole at emitting layer.

We have synthesized new pure blue-emitting hyperbranched polyfluorene (Hyper-PDHF) through A2 and B3 type monomers via Suzuki coupling polymerization. The weight-average molecular weights (Mw) of the Hyper-PDHF was found about 35,000 with polydispersity index as 6.1. The UV absorption peak of the Hyper-PDHF film was at around 335 nm which was far blue shifted than that of linear PDHF film which was found at 380 nm. The pure blue photoluminescene (PL) peak of the Hyper-PDHF was measured at 419 nm as main emission with 397 and 444 nm as shoulder peaks. The Hyper-PDHF showed also higher PL quantum efficiency in solution than linear PDHF (Hyper-PDHF, Φsol =0.81; PDHF, Φsol=0.78). The annealed PDHF film (5 hrs on hot plate at 80℃) showed increased shoulder peak emissions and emission color was changed into the green emission. But, Hyper-PDHF film shows almost no excimer emission peak even the film was annealed. The enhanced PL efficiency and no excimer emission of Hyper-PDHF results from the inhibition of excimer formation by the introduction of the hyperbranched system into the polyfluorene backbone.

In this research a ring light was developed so that a partial shadowless shooting for the patient`s affected area at the medical treatment room and surgical operation room using high luminance light emitting diode (LED) for which attention is being paid as new lighting parts for medical purpose. LED which was applied to the development used high luminance three color LED for full color for which various color materialization and the adjustment of radiation intensity are possible and we can get white light in order to emphasize the delicate expression for generic tone of shooting object, strong highlight, simple shadow and three dimensional effect at the time of close-up shadowless shooting of the affected area. And at the time of design of ring light, the characteristics of LED and the loss of light at the time of penetrating light diffusion PC were considered so that intensity of illumination for over 150 lx can be obtained. The result of measurement of the intensity of illumination of the ring light that was developed revealed that maximum intensity of illumination of 225.7 lx was obtained, while smoke index was measured to be maximum 78 Ra in the case of Red(50%) Green(100%) and Blue LED(60%). We could confirm that response speed was also very fast as 1.72 ms.

The improved flux-lock type superconducting fault current limiter (SFCL) is composed of a series transformer and superconducting unit of the yttrium-barium-copper-oxide (YBCO) coated conductor. In this paper, we investigated current limiting characteristics through winding direction of coil 2 and variable number of coil 1 and coil 2 in improved flux-lock type SFCL. The better fault current characteristics and the burden of YBCO coated conductor can be confirmed from the experimental result in the higher turn ratio of coil 1 and coil 2 in the additive conditions. In case of subtractive condition, we can confirm a similar result in the same case of experimental conditions. but the burden of YBCO coated conductor has been increased from an increase in winding numbers of coil 2.

In this paper, the following results were obtained from the experiment in which electrification voltage of silicone rubber specimen for thermal bonding were measured under various time, temperature (10~40℃), and humidity (30~90%) conditions and different amount of carbon additives (0~15 phr (per hundred resin)). Electrostatics electrification voltage decreased when carbon is up to 10 phr, and there was no electrification voltage in 15 phr condition. The electrostatics electrification voltage did not change over time. When the temperature was constant, electrostatics electrification voltage sharply dropped when the humidity was around 70%. That means, this condition might be appropriate for prevention of charging. The electrification voltage decreased as humidity and amount of carbon increased.

We have proposed a new configuration on the cathode structure to improve a neutron yield without the application of external ion sources in an inertial electrostatic confinement (IEC) device. A neutron yield in the IEC device is closely related to the potential well structure generated inside the cathode and is proportional to the ion current. Therefore, the application of a double grid cathode structure to the IEC device is expected to produce a higher ion current and neutron yield than at a single grid cathode due to a high electric field strength generated around the cathode. These possibilities were verified as compared with the ion current calculated from both shape of the single and double grid cathode. Additionally from the results of ion`s lives and trajectories examined at various outer cathode voltages and grid cathode configurations by using particle simulations, the validity of the double grid cathode was confirmed.

Forest fire can cause a serious damage to overhead conductors. Therefore, detailed investigation on the changes of mechanical and electrical properties of damaged conductors should be carried out to understand the effect of forest fires on conductors. This is of critical importance in maintaining transmission line safely. This paper examines the changes of mechanical and electrical properties of flame exposed conductor. Tensile strength (TS) decreased according to increase of forest fire temperature and conductivity changed according to forest fire temperature. Specimens were aluminum conductors of aluminium conductor steel reinforced (ACSR) 410, 240, 480 ㎟. In this paper, the electrical and mechanical characteristics of forest fires exposed overhead conductors depending on the diameter of aluminum conductors are presented. It was possible to estimate the degree of deterioration caused by forest fires. The detailed results are given in the paper.

Nickel wires of 0.8 mm in diameter and 80 mm in length were electrically exploded in liquid media such as water, ethyl alcohol. The distribution of particle sizes was broad from a few micrometers to tens of nanometer. It was identified that the particles could be classified according to its sizes by using centrifugal separator. The powder prepared in distilled water showed mainly pure metallic Ni phase although a little oxide phase was observed. The powders prepared in ethyl alcohol showed complicated unknown phases, which is attributed to the compound of carbon in the organic liquid. This unknown phase was turned to pure metallic Ni phase after heat treatment.

Three-dimensionally ordered macro-porous Sn-C composites were prepared by using polystyrene microsphere as a template. The Sn-C composites were composed of well-interconnected pore with circular shape and wall structure with wall thickness of a few tens of nano-meters. This porous three-dimensional structure is readily and uniformly accessible to the electrolyte, which facilitates lithium ion diffusion during charge-discharge reactions. The wall thickness of the composites was increased as the increase of Sn content of the composite. From EDS analysis, it is confirmed that the Sn was dispersed uniformly in Sn-C composites. The capacity was increased as the Sn content increased, which is due to Sn anode with high capacity. The Sn-C composites with high Sn content showed superior cyclic performances. Such enhancement is ascribed to the thick wall thickness and small pore size of the sample with high Sn content. The Sn-C composite with Sn 30 wt% showed relatively high capacity and stable cycle life, however, the stability of the 3-dimensional structure should be enhanced by further work.