In advanced device technologies such as microelectromechanical systems (MEMS), nanoscale electronics, optoelectronic components, and piezoelectric devices, the demand for enhanced mechanical, electrical, and optical performance together with high reliability continues to grow. In response, a variety of functional thin-film materials have been developed; among them, Pb(Zr,Ti)O₃ (PZT) thin films with high piezoelectric coefficients have emerged as key materials for realizing highperformance sensors and actuators. However, residual stress within thin films can adversely affect device reliability, performance, and lifetime. This tutorial paper provides a practical and step-by-step guide to residual stress analysis using X-ray diffraction (XRD) based on the sin²φ method. As a representative case study, we quantitatively analyze the in-plane residual stress of a PZT thin film deposited on a flexible metal-foil substrate. Residual stress was evaluated using X-ray diffraction (XRD) in combination with the sin²φ method. The present analysis is expected to deepen understanding of residual-stress behavior in thin films and to inform stress-aware design and reliability optimization of PZT-based devices

Piezoelectric thin films have become increasingly significant in applications such as MEMS devices, wearable electronics, and lab-on-a-chip systems due to the miniaturization and integration of electronic devices. For piezoelectric thin films, even when an electric signal is applied in the thickness direction, greater deformation can often be observed in the in-plane direction, which is perpendicular to the electric field. Therefore, piezoelectric thin film devices are frequently designed using the transverse mode. As a result, it is crucial to evaluate piezoelectric thin films by measuring their transverse piezoelectric coefficient. This tutorial paper introduces a method for evaluating the effective transverse piezoelectric coefficient (e_31,f) of piezoelectric thin films using laser Doppler vibrometry (LDV). Additionally, the paper outlines a step-by-step procedure for measuring e31,f while using Bi_1/2Na_1/2TiO₃-based piezoelectric thin films as an example. This tutorial is expected to provide a practical and valuable method for measuring and analyzing the transverse piezoelectric properties, thereby supporting the development of new piezoelectric thin film materials.

In this study, the electrical properties of zinc oxide (ZnO) thin-film transistors (TFTs) based on oxide semiconductors were analyzed. As interest in next-generation transparent and flexible displays grows, ZnO, which offers high field-effect mobility and transparency, has emerged as a promising material to overcome the limitations of amorphous silicon (a-Si)-based TFTs. ZnO has a wide bandgap and optical transparency and can be deposited on various substrates at low temperatures, making it a suitable channel material for future display devices. In this study, ZnO TFTs were fabricated with an inverted staggered structure using a p⁺⁺ Si wafer coated with SiO₂ as the substrate. The ZnO channel layer was deposited by RF magnetron sputtering, and the ITO source/drain electrodes were formed using an e-beam evaporator. The electrical characteristics was evaluated using Keithley 4200A-SCS parameter analyzer. Mobility, On/Off ratio, and subthreshold swing (SS) were calculated from the measurements.