Skip to main navigation
Skip to main content
KIEEME
mobile search button
mobile menu button
Search
Advanced Search
ABOUT
ABOUT
Journal introduction
Aims and scope
Editorial board
Management team
Best practice
Subscription information
Contact us
BROWSE ARTICLES
All issues
Current issue
Most viewed
Most downloaded
Most cited
Search
Metrics
EDITORIAL POLICIES
Research ethics
Peer review policy
Copyright and open access policy
Article sharing policy
Archiving policy
Data sharing policy
Preprint policy
Crossmark policy
Advertising and sponsorship policy
Research misconduct-related regulations
FOR CONTRIBUTORS
Instructions for authors
Checklist
Copyright transfer agreement
Graphical abstract
E-SUBMISSION
ABOUT
Journal introduction
Aims and scope
Editorial board
Management team
Best practice
Subscription information
Contact us
BROWSE ARTICLES
All issues
Current issue
Most viewed
Most downloaded
Most cited
Search
Metrics
EDITORIAL POLICIES
Research ethics
Peer review policy
Copyright and open access policy
Article sharing policy
Archiving policy
Data sharing policy
Preprint policy
Crossmark policy
Advertising and sponsorship policy
Research misconduct-related regulations
FOR CONTRIBUTORS
Instructions for authors
Checklist
Copyright transfer agreement
Graphical abstract
Page Path
HOME
Search
Asymmetric programming
WHERE t1.sid in(parameter_dbtbl_keyword '%Asymmetric programming%') and t1.xml_status <> 99
1
results for
"Asymmetric programming"
Filter
Keywords
1×10(6) program/Erase cycles (1)
3 V single power supply (1)
Asymmetric programming (1)
Nonvolatile memory (1)
SONOS (1)
Publication year
2003 (1)
Authors
Byung Cheul Kim (1)
Kwang Yell Seo (1)
Keywords
1×10(6) program/Erase cycles (1)
3 V single power supply (1)
Asymmetric programming (1)
Nonvolatile memory (1)
SONOS (1)
Cancel
Close
authors
Byung Cheul Kim (1)
Kwang Yell Seo (1)
Cancel
Close
Publication Year
2003 (1)
Cancel
Close
Funded articles
Cancel
Close
"Asymmetric programming"
The Improved Electrical Endurance(Program/Erase Cycles) Characteristics of SONOS Nonvolatile Memory Device
Byung Cheul Kim, Kwang Yell Seo
J Electr Electron Mater
2003;16(1):5-10.
Published online January 1, 2003
PDF
4
View
0
Download
First
Prev
Page
of 1
Next
Last
×
TOP
First
Prev
