N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using a-SiO_X:B), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into SiO₂ phase by FTIR and BRL. The a-SiO_X:B layer is deposited by PECVD using SiH₄, B₂H₆, H₂, CO₂ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing SiH₄ and B₂H₆. When a-SiO_X:B is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.