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"Data qualification"

Regular Paper : Semiconductor ; Nitride/Oxide Etch Spectrum Data Verification by Using Optical Emission Spectroscopy
Soo Kyoung Park, Dong Hyun Kang, Seung Soo Han, Sang Jeen Hong
J Electr Electron Mater 2012;25(5):353-360.   Published online May 1, 2012
As semiconductor device technology continuously shrinks, low-open area etch process prevails in front-end etch process, such as contact etch as well as one cylindrical storage (OCS) etch. To eliminate over loaded wafer processing test, it is commonly performed to emply diced small coupons at stage of initiative process development. In nominal etch condition, etch responses of whole wafer test and coupon test may be regarded to provide similar results; however, optical emission spectroscopy (OES) which is frequently utilize to monitor etch chemistry inside the chamber cannot be regarded as the same, especially etch mask is not the same material with wafer chuck. In this experiment, we compared OES data acquired from two cases of etch experiments; one with coupon etch tests mounted on photoresist coated wafer and the other with coupons only on the chuck. We observed different behaviors of OES data from the two sets of experiment, and the analytical results showed that careful investigation should be taken place in OES study, especially in coupon size etch.
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