We have proposed an optical thin film and micro lens to improve the luminance of organic light emitting device. The first method, optical thin film was calculated refractive index of dielectric layer material that was modulated refractive index of organic material, ITO (indium tin oxide)and glass. The second method, microlens was applied with lenses on the organic device. Optical thin films were designed with Macleod Simulator and Micro Lenses were calculated by FDTD (finite-difference time-domain) solution. The structure of thin film was designed in organic material/ITO/dielectric layer/glass. The lenses size, height and distance were 5 ㎛, 1 ㎛, 1 ㎛, respectively. The material of micro lenses used silicon dioxide. Result, The highest luminance of OLED which applied with microlens was 11,185 cd/m2, when approval voltage was 14.5 V, applied thin film was 5,857 cd/m2. The device efficiency applying microlens increased 3 times than the device which does not apply microlens.

In this investigation, the effects of N(2)/(Ar+N(2)) gas partial pressure on the structural, electrical, and thermal properties of AlN dielectric layers prepared on aluminum substrates using RF-magnetron sputtering method were analyzed. Among the films, the AlN dielectric film deposited under N(2)/(Ar+N(2)) gas partial pressure of 75% exhibit the highest AlN (002) preferred orientation, which was grain size of about 15.3(2) nm and very dense structure. We suggest the possibilities of it`s application as a dielectric layer for metal PCB because the AlN films prepared at optimized gas partial pressure can improving the insulating property, the thermal conductivity, and thermal diffusivity of the films.