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"Electrical characteristics"

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"Electrical characteristics"

Process Parameter Control of Arc Melting Process for Ti3SiC2 MAX Phase Synthesis
Chang Wan Nou, Byeong Guen Kim, Sang Hyun Bae, Soon-mok Choi
J Electr Electron Mater 2020;33(6):515-520.   Published online November 1, 2020
DOI: https://doi.org/10.4313/JKEM.2021.33.6.16
The Ti3SiC2 MAX phase was synthesized by arc-melting process under three different processing times. We confirmed that the reaction between the TiCX phase and Ti-Si liquid phase is important for the synthesis of the Ti3SiC2 MAX phase. Results suggest that the Ti3SiC2 MAX phase decomposed when the arc-melting time was greater than 80s. Herein, we aim to determine the detailed parameters for the reported arc-melting process, which can provide useful insights on the synthesis of the Ti3SiC2 MAX phase by arc-melting process. Furthermore, we compared the electrical characteristics and densities of the three samples.
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Evaluation of Electrical Properties of IZO Thin-Film with UV Post-Annealing Treatment Time
Jae-yun Lee, Han-sang Kim, Sung-jin Kim
J Electr Electron Mater 2020;33(2):93-98.   Published online March 1, 2020
DOI: https://doi.org/10.4313/JKEM.2021.33.2.3
We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and Ion/Ioff ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.
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Nano and Oxide Electronics : Particle Behavior of Silver Nanoparticles Synthesized by Electrical Resistance Analysis
Young Woo Yoon, Si Hong Ryu, Sung Joo Yang, Seong Eui Lee
J Electr Electron Mater 2015;28(8):531-538.   Published online August 1, 2015
This study examined the size and shape of the nano-silver particle through the analysis of electrical resistance when synthesizing nano-sized silver by using the chemical liquid reduction. Changes in particle behaviors formed according to the changes in electronic characteristics by electric resistance in each time period in the beginning of reduction reaction in a course of synthesizing the nano-silver particle formation were studied. In addition, analysis was conducted on particle behaviors according to the changes in concentration of AgNO3 and in temperature at the time of reduction and nucleation and growth course when synthesizing the particles based on the particle behaviors were also examined. As the concentration of AgNO3 increased, the same amount of resistance of approximately 5 Ω was increased in terms of initial electronic resistance. Furthermore, according to the result of formation of nuclear growth graph and estimation of slope based on estimated resistance, slops of 6.25×10-3, 2.89×10-3, and 1.85×10-3 were derived from the concentrations of 0.01 M, 0.05 M, and 0.1 M, respectively. As the concentration of AgNO3 increased, the more it was dominantly influenced by the nuclear growth areas in the initial phase of reduction leading to increase the size and cohesion of particles. At the time of reduction of nano-silver particle, the increases of initial resistance were 4 Ω, 4.2 Ω, 5 Ω, and 5.3 Ω, respectively as the temperature increased. As the temperature was increased into 23℃, 40℃, 60℃, and 80℃, slopes were formed as 4.54×10-3, 4.65×10-3, 5.13×10-3, and 5.42×10-3 respectively. As the temperature increased, the particles became minute due to the increase of nuclear growth area in the particle in initial period of reduction.
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Regular Paper : Thin Films and Sensors ; Analysis of the Electrical Properties of Solar Cell According to Variation of the Frequency
Seong Geol Kim, Chang Woo Hong, Kyung Sup Lee
J Electr Electron Mater 2012;25(5):372-376.   Published online May 1, 2012
This study focused on the performance characteristics of solar cell using the impedance technique. We measured an impedance according to frequency from 1 Hz until 1 MHz. It could know that the impedance was decreased according to the frequency increases in solar cell. The impedance of single crystal solar cell was 0.61 Ω at 1 Hz, and kept almost settled value to 1×10(2) Hz. However, the impedance of polycrystal solar cell was 7×10(3) Ω at 1 Hz.
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Regular Paper : Thin Films and Sensors ; Analysis of Electrical Characteristics for Single Crystalline and Poly-crystalline Solar Cell
Chang Woo Hong, Yong Sung Choi, Kyung Sup Lee, Soo Young Cho
J Electr Electron Mater 2011;24(9):744-749.   Published online September 1, 2011
Recently, annual usage of energy is dramatically increasing because industrialization is going faster and more electricity is needed due to various electronic devices. This study focused on the performance characteristics of solar cell using the impedance technique. The experiment measured an impedance according to frequency`s from 2 mHz until 1 MHz. It could know that the impedance was decreased according to the frequency increases in solar cell. The imaginary part was changed from capacitance component to inductance component.
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Thin Films and Sensors : Analysis of Electrical Properties for Optimal Operating Conditions of Mono-crystalline Si Solar Cell
Ji Woong Kim, Yong Sung Choi, Kyung Sup Lee, Soo Young Cho, Jong Sun Hwang
J Electr Electron Mater 2011;24(8):654-658.   Published online August 1, 2011
This paper was investigated the electrical properties for optimal operating conditions of monocrystalline silicon solar cell. The output of electricity for monocrystalline solar cell was investigated according to the distances between solar cell and halogen lamp and to the resistances by the variable resistor.
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Electrical Characteristics Assessment for PE Series Insulations
J Electr Electron Mater 2007;20(5):430-435.   Published online May 1, 2007
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Microstructure and Varistor Characteristics of ZnO-Pr6O11-CoO-Cr2O3-Dy2O3-Based Varistors
Chun U Nam, Jong A Park, Myeong Jun Kim
J Electr Electron Mater 2003;16(10):897-901.   Published online October 1, 2003
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