Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the electronic systems developed. If the electronic systems are exposed to HPEM (high power electromagnetics), the systems will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductors are vulnerable to external stress factor such as the coupled electromagnetic pulse. Therefore, we will discuss about malfunction behavior and DFR (destruction failure rate) of the semiconductor caused by amplitude and repetition rate of the pulse. For this experiment, the pulses were injected into the pins of general purpose IC due to the fact that pulse injection test enables the phenomenon after the HPEM is coupled to power cables. These pulses were produced by pulse generator and their characteristics are 2.1 [ns] of pulse width, 1.1 [ns] of pulse rise time and 30, 60, 120 [Hz] of pulse repetition rate. The injected pulses have changed frequency, period and duty ratio of output generated by Timer IC. Also, as the pulse repetition rate increases the breakdown threshold point of the timer IC was reduced.

It is summarized that potential causes of performance degradations and failure mechanisms ofcrystalline silicon photovoltaic (PV) modules installed in Middle East area. In addition, we also reviewedcurrent PV module qualification test (IEC 61215) and the methods for detection of wear-out fault. Thefailure of PV modules in the extreme environmental conditions such as deserts is mainly due to hightemperature, humidity, and dust storms. In particular, cementation phenomenon caused by combination ofsand and moisture leads to rapid degradation in the performance of PV modules. In order to evaluate andguarantee the long term reliability of PV modules, specific qualification tests such as sand dust test, saltmist test and potential induce degradation test considering operating environment of PV module should becarried out.