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"Figure of merit"

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"Figure of merit"

Transparent Electrode Characteristics of SnO2/AgNi/SnO2 Multilayer Structures
Min-ho Hwang, Hyun-yong Lee
J Korean Inst Electr Electron Mater Eng 2024;37(5):500-506.   Published online September 1, 2024
DOI: https://doi.org/10.4313/JKEM.2024.37.5.5
The transparent electrode characteristics of the SnO₂/AgNi/SnO₂ (OMO) multilayer structures prepared by sputtering were investigated according to the annealing temperature. Ni-doped Ag of various compositions was selected as the metal layer and heat treatment was performed at 100~300℃ to evaluate the thermal stability of the metals. The manufactured OMO multilayer structures were heat treated for 6 hours at 400~600℃ in an N₂ atmosphere. The structural, electrical, and optical properties of the OMO structures before and after annealing were evaluated and analyzed using a UV-VIS spectrophotometer, 4-point probe, XPS, FE-SEM, etc. OMO with Ni-doped Ag shows improved performance due to the reduction of structural defects of Ag during annealing, but OMO structure with pure Ag shows degradation characteristics due to Ag diffusion into the oxide layer during high-temperature annealing. The figure of merit (FOM) of SnO₂/Ag/SnO₂ was highest at room temperature and gradually decreased as the heat treatment temperature increased. On the other hand, the FOM value of SnO₂/AgNi/SnO₂ mostly showed its maximum value at high temperature(~550℃). In particular, the FOM value of SnO₂/Ag-Ni (3.2 at%)/SnO₂ was estimated to be approximately 2.38×10-2 Ω-1. Compared to transparent electrodes made of other similar materials, the FOM value of the SnO₂/Ag-Ni (3.2 at%)/SnO₂ multilayer structure is competitive and is expected to be used as an alternative transparent conductive electrode in various devices.

Citations

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  • Strategies and Multilayer Architectures for Decoupling Conductivity–Transparency Trade-Off
    Xi Cao, Yuying Feng, Zhengjie Guo, Xuezhi Li, Yixian Xie, Chenyao Huang, Yikun Yang, Fuyueyang Tan, Kaiquan Lei, Zaijin Li, Yi Qu, Lin Li
    Coatings.2026; 16(8): 915.     CrossRef
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The Effect of Electron Beam Irradiation and Ag Buffer Layer on the Structural, Optical, and Electrical Properties of ZnO/Ag Thin Films
Jin-young Choi, Tae-young Eom, Yun-je Park, Su-hyun Choi, Dae-hyun Kim, Yun-ju Cho, Daeil Kim
J Korean Inst Electr Electron Mater Eng 2018;31(4):221-225.   Published online May 1, 2018
DOI: https://doi.org/10.4313/JKEM.2018.31.4.221
In this work, in order to effectively improve the electrical conductivity and visible light transmittance of ZnO thin films, ZnO single layer and ZnO/Ag bi-layer films were deposited on glass substrates by radio frequency and direct current magnetron sputtering, and then, the effects of an Ag buffer layer and electron beam irradiation on the electrical and optical properties of the films were investigated. The observed results indicate that ZnO 100 nm / Ag 7 nm films show higher opto-electrical performance than the ZnO single layer film. In addition, electron beam irradiation also effectively enhanced the visible transmittance and electrical conductivity of the ZnO/Ag bi-layer films.
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Piezoelectric Properties of 0.65Pb(Zr1-xTix)O3-0.35Pb(Zn1/6Ni1/6Nb2/3)O3 Ceramics and Their Application to Piezoelectric Energy Harvester
Sora Jo, Daesu Kim, Yuri Cho, Sin Joong Son, Hyung-won Kang, Sahn Nahm, Seung Ho Han
J Korean Inst Electr Electron Mater Eng 2018;31(4):216-220.   Published online May 1, 2018
DOI: https://doi.org/10.4313/JKEM.2018.31.4.216
The piezoelectric properties of 0.65Pb(Zr1-xTix)O3-0.35Pb(Zn1/6Ni1/6Nb2/3)O3 (PZTx-PZNN) ceramics with 0.530≤ x≤0.555 were investigated for application to piezoelectric energy harvesters. Although a morphotropic phase boundary (MPB) was found at approximately x=0.545, the ceramic with the highest figure of merit (FOM) (d33×g33) was observed at a composition of x=0.540. Values of this figure of merit, d33×g33, of 19.6 pm2/N and 20.2 pm2/N were obtained from PZT0.540-PZNN ceramics sintered at 920℃ and 950℃, respectively. A high output power of 937 μW and a high power density of 3.3 mW/cm3 were obtained from unimorph-type piezoelectric energy harvesters fabricated using PZT0.540-PZNN ceramic sintered at 920℃ for 4h.
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Figure of Merit of SnO2/Ag/Nb2O5/SiO2/SnO2 Transparent Conducting Multilayer Film Deposited on Glass Substrate
Jin-gyun Kim, Sang-don Lee, Gun-eik Jang
J Korean Inst Electr Electron Mater Eng 2017;30(2):81-85.   Published online February 1, 2017
DOI: https://doi.org/10.4313/JKEM.2017.30.2.81
SnO2/Ag/Nb2O5/SiO2/SnO2 multilayer films were prepared on glass substrate by sequential using RF/DC magnetron sputtering at room temperature. The influence of top SnO2 layer thickness on optical and electrical properties of the multilayer films was investigated. Experimentally measured results exhibit transmittances over 84.3 ~ 85.8% at 550 nm wavelength. As the top SnO2 layer thickness increased from 40 to 55 nm, the sheet resistance (Rs) increased from 5.81 to 6.94 Ω/sq. The Haacke`s figure of merit (FOM) calculated for the samples with various SnO2 layer thicknesses was a maximum at 45 nm (35.3 × 10-3 Ω-1).
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Effects of Different Dopants(B, Al, Ga, In) on the Properties of Transparent conducting ZnO Thin Films
Young Woo No, Jong Rae Cho, Se Mo Son, Su Tae Chung
J Korean Inst Electr Electron Mater Eng 2008;21(3):242-248.   Published online March 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.3.242
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