With the development of the Internet of Things, the use of flexible displays has become widespread. In particular, the use of curved, bendable, and rollable displays is increasing. Flexible display production processes include various important components such as lamination material, flexible substrates, and adhesives. Among them, improvement of the lamination process comprises a large proportion of efforts for further development. In this paper, we attempt to improve the transmittance of the display substrate by performing a bubble removal process after adhesion. The transmittance of the glass substrate with the bubble removal process was 5~12% higher than that of the substrate without the bubble removal process. The fill-strength after the bubble removal process was improved by 21.4%, and the shear-strength was improved by 43.9%.

Citations

• Evolution of OLED Lamination Technology With Development of Display Form Factors
  Kwan‐Young Han, Ji‐Hoon Park
  Advanced Materials Technologies.2026;[Epub]     CrossRef

Silicon nitride thin film deposited with Plasma Enhanced Chemical Vapor Deposition was treated by a nitrogen plasma generated by Inductively Coupled Plasma at room temperature. The treatment was investigated by Fourier Transform Infrared Spectroscopy and Atomic Force Microscopy on the surface at various RF source powers at two RF bias powers. The amount of hydrogen was reduced and the surface roughness of the films was decreased remarkably after the plasma treatment. In order to understand the causes, we analyzed the plasma diagnostics by Optical Emission Spectroscopy and Double Langmuir Probe. Based on these analysis results, we show that the nitrogen plasma treatment was effective in the improving of the properties silicon nitride thin film for flexible display.

We investigated the characteristics of the silicon oxy-nitride and nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) at the low temperature with a varying NH3/N2O mixing ratio and a fixed SiH4 flow rate. The deposition temperature was held at 150℃ which was the temperature compatible with the plastic substrate. The composition and bonding structure of the nitride films were investigated using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Nitrogen richness was confirmed with increasing optical band gap and increasing dielectric constant with the higher NH3 fraction. The leakage current density of the nitride films with a high NH3 fraction decreased from 8X10-9 to 9X10-11(A/cm2 at 1.5 MV/cm). This results showed that the films had improved electrical properties and could be acceptable as a gate insulator for thin film transistors by deposited with variable NH3/N2O mixing ratio.