We demonstrated a crack-free α-Ga₂O₃ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and N₂ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and 450~490℃, respectively. The surface of α-Ga₂O₃ template grown at 470℃ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of α-Ga₂O₃ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

This study examined the size and shape of the nano-silver particle through the analysis of electrical resistance when synthesizing nano-sized silver by using the chemical liquid reduction. Changes in particle behaviors formed according to the changes in electronic characteristics by electric resistance in each time period in the beginning of reduction reaction in a course of synthesizing the nano-silver particle formation were studied. In addition, analysis was conducted on particle behaviors according to the changes in concentration of AgNO3 and in temperature at the time of reduction and nucleation and growth course when synthesizing the particles based on the particle behaviors were also examined. As the concentration of AgNO3 increased, the same amount of resistance of approximately 5 Ω was increased in terms of initial electronic resistance. Furthermore, according to the result of formation of nuclear growth graph and estimation of slope based on estimated resistance, slops of 6.25×10-3, 2.89×10-3, and 1.85×10-3 were derived from the concentrations of 0.01 M, 0.05 M, and 0.1 M, respectively. As the concentration of AgNO3 increased, the more it was dominantly influenced by the nuclear growth areas in the initial phase of reduction leading to increase the size and cohesion of particles. At the time of reduction of nano-silver particle, the increases of initial resistance were 4 Ω, 4.2 Ω, 5 Ω, and 5.3 Ω, respectively as the temperature increased. As the temperature was increased into 23℃, 40℃, 60℃, and 80℃, slopes were formed as 4.54×10-3, 4.65×10-3, 5.13×10-3, and 5.42×10-3 respectively. As the temperature increased, the particles became minute due to the increase of nuclear growth area in the particle in initial period of reduction.

Growth mechanism of GS-MBE (Gas source-Molecular Beam Epitaxy) has been investigated. We observed that the growth rate of GaN films is changing from 520 nm/h to 440nm/h by the variation of V/III ratio under nitrogrn-rich growth condition. It was explained the amount of hydrogen on the growth front varies by the ammonia flow, and gallium hydrides are generated on the surface by a reaction of hydrogen and gallium, resultantly the amount of gallium supplying is changing along with the NH3 flow. Reflection high energy electron diffraction (RHEED) observation was used to confirm the N-rich condition. The crystal quality of GaN was estimated by photoluminescence (PL) and X-ray diffraction (XRD).