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"Indium Tin Oxide"

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"Indium Tin Oxide"

Optimization of Electrical and Optical Properties of a-IZO Thin Film for High-Efficiency Solar Cells
Somin Park, Sungjin Jeong, Jiwon Choi, Youngkuk Kim, Junsin Yi
J Korean Inst Electr Electron Mater Eng 2023;36(1):49-55.   Published online January 1, 2023
DOI: https://doi.org/10.4313/JKEM.2023.36.1.8
The deposition of indium zinc oxide (IZO) thin films was carried out on substrate at room temperature by RF magnetron sputtering. The effects of substrate temperature, RF power and deposition pressure were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, structure, and transmittance. As the RF power increases, the resistivity gradually decreases, and the transmittance slightly decreases. For the variation of deposition pressure, the resistivity greatly increases, and the transmittance is decreased with increasing deposition pressure. As a result, it was demonstrated that an IZO film with the resistivity of 3.89 × 10-4 Ω·cm, the hole mobility of 51.28 ㎠/Vs, and the light transmittance of 86.89% in the visible spectrum at room temperature can be prepared without post-deposition annealing.
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Optimization of Printing Process for the Development of Metal-oxide Resistivity Sensor
Seok Hwan Lee, Ji Eun Koo, Moon Jin Lee, Jung-yeul Jung, Ji Ho Chang
J Korean Inst Electr Electron Mater Eng 2016;29(6):353-358.   Published online June 1, 2016
DOI: https://doi.org/10.4313/JKEM.2016.29.6.353
In this paper, we have studied about the optimum fabrication condition of the printed Indium Tin Oxide (ITO) layers for the electrical resistance-type sensor application. We have investigated on the substrates surface treatments, mixing ratio of organic binder/ITO powder, and viscosity of the printing paste to determine the optimum condition of the screen printed ITO layer. Also, we found that the printing condition is closely related with the sensor performance. To know the feasibility of printed ITO layer as an electrical resistance-type sensor, we have fabricated the ITO sensors with a printed and sputtered ITO layers. The printed ITO films revealed 102 times higher sensitivity than the sputtered ITO layer. Also, the sputtered ITO layer exhibited an operating temperature of 127℃ at the operating voltage of 5 V. While, in case of the printed ITO layer showed the operating temperature of 27.6℃ in high operating voltage of 30 V. We found that the printed ITO layer is suitable for the various sensor applications.

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  • Finite element simulation of the slurry printing process in material extrusion additive manufacturing
    Xuanzheng Zhou, Yunchen Zhang, Yaping Sun, Wenjie Lv, Huiping Shao, Tao Lin
    International Journal of Material Forming.2026;[Epub]     CrossRef
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A Study on Buffer Layer Design for Transmittance Improvement of Indium Tin Oxide
Hyun Chul Ki, Jeong Bin Lee, Sang Ki Kim, Kyung Jin Hong
J Korean Inst Electr Electron Mater Eng 2010;23(1):24-28.   Published online January 1, 2010
DOI: https://doi.org/10.4313/JKEM.2010.23.1.024
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Study on the ITO Pre-treatment for the Highly Efficient Solution Processed Organic Light-emitting Diodes
Eun Young Choi, Ji Hyun Seo, Hak Bum Choi, Jong Tae Je, Young Kwan Kim
J Korean Inst Electr Electron Mater Eng 2010;23(1):18-23.   Published online January 1, 2010
DOI: https://doi.org/10.4313/JKEM.2010.23.1.018

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  • Evaluations of Life Cycle Assessment on Indium-Tin-Oxide Electrochemical Recycling Process
    Raymund K.I. Kim, Na-Ri Lee, Soo-Sun Lee, Young-Sang Lee, Sung-Jei Hong, Young-Keun Son, Tae-Whan Hong
    Clean Technology.2013; 19(4): 388.     CrossRef
  • Environmental Impacts Assessment of ITO (Indium Tin Oxide) Using Material Life Cycle Assessment
    Soo-Sun Lee, Na-Ri Lee, Kyeong-Il Kim, Tae-Whan Hong
    Clean Technology.2012; 18(1): 69.     CrossRef
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Modeling of Indium Tin Oxide(ITO) Film Deposition Process using Neural Network
Chul Hong Min, Sung Jin Park, Neung Goo Yoon, Tae Seon Kim
J Korean Inst Electr Electron Mater Eng 2009;22(9):741-746.   Published online September 1, 2009
DOI: https://doi.org/10.4313/JKEM.2009.22.9.741
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Study of ITO/ZnO/Ag/ZnO/ITO Multilayer Films for the Application of a very Low Resistance Transparent Electrode on Polymer Substrate
Jin Woo Han, Jeong Min Han, Byoung Yong Kim, Young Hwan Kim, Jong Yeon Kim, Chul Ho Ok, Dae Shik Seo
J Korean Inst Electr Electron Mater Eng 2007;20(9):798-801.   Published online September 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.9.798

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  • Optical transparent metamaterial emitter with multiband compatible camouflage based on femtosecond laser processing
    Shu‐Wen Zheng, Xiu‐Yu Chen, Jin‐Long Huang, Kun Yu, Meng‐Dan Qian, Yu‐Fang Liu
    Nanophotonics.2025; 14(5): 625.     CrossRef
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Work Function Increase of ITO Modified by Self Assembled Monolayer for Organic Electrical Devices
J Korean Inst Electr Electron Mater Eng 2006;19(6):563-567.   Published online June 1, 2006
DOI: https://doi.org/10.4313/JKEM.2006.19.6.563
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Characteristics of ITO/Polymeric Films with Change of Oxygen Partial Pressure
J Korean Inst Electr Electron Mater Eng 2004;17(8):846-851.   Published online August 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.8.846
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