We investigated the potential of IO:H thin films and hydrogen doping to improve current density and fill factor for enhancing the performance of silicon heterojunction solar cells. We revealed that a transmittance of 86.7% and work function of 5.4 eV could be achieved by injecting 3 sccm of hydrogen gas. The lattice constant of 1.037 nm at the AB site indicates an anion antibonding tendency, and the work function increases as the Fermi level shifts to the valence band. Based on these findings, we fabricated a silicon heterojunction solar cell and achieved an efficiency of 18.53%, while computer simulation confirmed a conversion efficiency of 24.65%, an open-circuit voltage of 724 mV, and a fill factor of 82.72% at a current density of 41.15 mA/㎠.

In this work, one dimension In₂O₃ nanostructures as detecting materials for indoor toxic gases were synthesized by an electrospinning process. The morphology of electrospun In₂O₃ nanofibers was controlled by electrolyte composition, applied voltage and working distance between a nozzle and a substrate. The synthesized In₂O₃ nanofibers-based paste with/without carbon black additives was prepared for the integration on a sensor device. The integration of In₂O₃ sensing materials was conducted by a hand-printing of the paste into the interdigit Au electrodes patterned on Si wafer. Gas sensing properties on CO and HCHO gases were characterized at 300℃. The evaluated sensing properties such as sensitivity, response time and recovery time were improved in In₂O₃ nanofiber pastes with carbon black, compared to the paste without carbon black.