In parallel with the efforts to improve the device performance in modern integrated circuits, it is necessary to downscale their core components, field-effect transistors (FETs), generally gauged by their physical gate length. Upon such device scaling, the emergence of the short-channel effect impedes further scaling into the nanometer scale in the silicon VLSI (Very-Large-Scale-Integration) system. To address this issue, two-dimensional (2D) semiconductors, leveraging their atomically thin thickness and dangling-bond-free characteristics, are being highlighted as a material solution for future scaling technology without severe mobility degradation. Despite the expected ideal physical properties, 2D semiconductors have yet to realize their full potential owing to the limited development of integration technology. In this context, we survey and review the tailored van der Waals integration technologies for 2D FETs. In particular, we provide an in-depth study of both van der Waals integrated contact and dielectric methods along with an explanation of customized materials. In essence, this van der Waals integrationcentered approach will be a core strategy to implement the high-performance 2D transistors that meet the demand of FET miniaturization.

With the recent development of emerging technologies, information acquisition and delivery between users has been actively conducted, and inorganic thin film transfer technology that effectively transfers various materials and devices is being studied to develop flexible electronic devices accordingly. This is aimed at innovative structural changes and functional improvement of electronic devices in the era of the Internet of Things (IoT). In particular, advanced technologies such as micro- LEDs are used to realize high-resolution flexible displays, and the possibility of heterogeneous integrated technologies can be presented by precisely transferring materials to substrates through various transfer process. This paper introduced physical, chemical, and self-assembly transfer methods based on inorganic thin film materials to implement heterogeneous integrated flexible semiconductor systems and introduces the results of application studies of semiconductor devices obtained through different transfer technologies. These studies are expected to bring about innovative changes in the field of smart devices, medical technology, and user interfaces in the future.