With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of Ca[(Li_1/3Nb_2/3)_1-xTi_x]O_3-δ, which has excellent dielectric properties such as ε_r above 40, quality factor (Q·f₀) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of -20~-10 ppm/℃, is reported as high as 1,175℃, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to Ca[(Li_1/3Nb_2/3)_1-xTi_x]O_3-δ to lower its sintering temperature under 900℃ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at 875℃, specimen showed density of 4.11 g/cm³,ε _r of 40.1, Q·f₀ of 4,869 GHz, and TCF of -5.9 ppm/℃. With 15 weight % of Zn-B-O glass and sintered at 87 5℃, specimen showed density of 4.14 g/cm³, ε_r of 40.4, Q·f₀ of 7,059 GHz, and TCF of -0.92 ppm/℃.