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"Latch-up current"

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"Latch-up current"

Electrical Characteristics of the Dual Gate Emitter Switched Thyristor
J Korean Inst Electr Electron Mater Eng 2005;18(5):401-406.   Published online May 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.5.401
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Switching Characteristics due to the Impurity Concentration and the Channel Length in Lateral MOS-controlled Thyristor
J Korean Inst Electr Electron Mater Eng 2005;18(1):17-23.   Published online January 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.1.017
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Characteristics of Anode Current due to the Impurity Concentration and the Channel Length of Lateral MOS-controlled Thyristor
J Korean Inst Electr Electron Mater Eng 2004;17(10):1034-1040.   Published online October 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.10.1034
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Characteristics of Latch-up Current of the Dual Gate Emitter Switched Thyristor
J Korean Inst Electr Electron Mater Eng 2004;17(8):799-805.   Published online August 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.8.799
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