Recently, oxide semiconductors have assumed a pivotal role in electronic displays and transparent electronic devices such as amorphous indium gallium zinc oxide (a-IGZO), characterized by high electron mobility and excellent stability. a- IGZO is very suitable for next-generation applications such as flexible displays because it is possible to manufacture highperformance transistors even at low temperatures. However, since the electrical properties tend to deteriorate in hightemperature environments, research aimed at improving thermal stability is needed. In this study, a low-temperature plasma annealing process was introduced to improve the high-temperature stability of the a-IGZO thin film. This process enhances electron mobility by reducing defects in the a-IGZO film and provides stable device performance even under high-temperature conditions. As a result of the experiments of 5 min, 10 min, 15 min, and 20 min, the a-IGZO TFT, which was subjected to plasma annealing at 160℃ for 5 min, showed the best electrical performance, especially in charge mobility and current-voltage characteristics. The technical potential for improving the performance of a-IGZO-based display device was emphasized, and the foundation for applying this power generation to flexible displays and next-generation electronic devices was laid. Future research will focus on determining the optimal annealing conditions by exploring various temperature ranges and plasma parameters to integrate these results into the actual device manufacturing process. These efforts are expected advance significantly to advancing next-generation high-performance display technology.

The display industry has recently been at the forefront of innovative advancements in modern electronic devices. Technological progress such as flexible display holds significant potential across various application fields, particularly in wearable devices and rollable displays. A low-temperature process is essential for fabricating such displays. One of the key technologies in displays is the thin film transistor (TFT), with amorphous indium gallium zinc oxide (a-IGZO) receiving particular attention. a-IGZO is widely applied in high-performance displays due to its high charge mobility and stability. While a thermal treatment above 350℃ is typically required to maximize the electrical performance of a-IGZO TFTs, such high temperatures pose challenges for utilizing polymer substrates like plastics. Here, we thesis investigates the simultaneous lowtemperature plasma annealing process to develop next-generation high-performance flexible display devices. To define the optimal temperature, devices were fabricated and analyzed at varying temperatures of 40℃, 80℃, 120℃, and 160℃. Experimental results indicated that devices fabricated at 160℃ and 80℃ exhibited superior performance, with those at 160℃ demonstrating better performance in terms of current ratio, threshold voltage, and subthreshold swing. These findings confirm that the simultaneous low-temperature plasma annealing process is effective for next-generation high-performance displays.

The size of semiconductor devices has been scaled down to improve packing density and output performance. However, there is uncontrollable spreading of the dopants that comprise the well, punch-stop, and channel-stop when using hightemperature annealing processes, such as rapid thermal annealing (RTA). In this context, low-temperature deuterium annealing (LTDA) performed at a low temperature of 300℃ is proposed to reduce the thermal budget during CMOS fabrication. The LTDA effectively eliminates the interface trap in the gate dielectric layer, thereby improving the electrical characteristics of devices, such as threshold voltage (VTH), subthreshold swing (SS), on-state current (ION), and off-state current (IOFF). Moreover, the LTDA is perfectly compatible with CMOS processes.

In this paper, PV modules using a low-temperature conductive film(LT-CF) as a bonding material between a cell and a solder free ribbon were produced and chracterized, which is more environmental-friendly, cost effective and high efficient. Mainly, filed electrical performance of PV modules using three different types of bonding material; a convetional solder ribbon(SR), a LT-CF and a light-capturing Ribbon(LCR) were compared to comfirm the feasibility of LT-CF as a bonding material. The filed test were conducted for 3 months and results were discussed in terms of amount of output energy production and efficiency.

The silicon nitride films were prepared by chemical vapor deposition using inductively coupled plasma. During the deposition, the substrate was heated at 150℃ and power 1,000 W. To evolution low temperature manufacture, we have studied the role of source gases, SiH4, NH3, N2, and H2, to produce Si-N and N-H bond in a-SiNx:H film growth. SiH4, NH3, and N2 flow rate fixed at 100, 10, and 10 sccm, H2 flow rate varied from 0 to 10 sccm by small scale. To get the electrical characteristics, we make MIM structure, and analysis surface bonding state. Experimental data show that Si-N and N-H bond is increased and hence electrical characteristics is showed 3 MV/cm breakdown-voltage, and leakage-current 10(-7) A/cm2.