In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/SiO2structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatb and voltage (VFB) shift was positive. Near-interface trap charge density (Nit) and negative oxide trap charge density (Nox) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitorsis higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

We investigated the effects of low temperature (500℃) O2 annealing on the characteristics of hafnium silicate (HfSi(x)O(y)) films deposited on a Si substrate by atomic layer deposition (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics such as flat band voltage shift (ΔV(fb)) by hysteresis without oxide capacitance reduction. We suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of HfSi(x)O(y) films deposited by ALD.