Magnetoelectric (ME) composites are comprised of magnetostrictive and piezoelectric phases. Lots of theoretical and experimental works have been done on ME composites in the last couple of decades. The output performance of ME composites has been enhanced by optimizing the constituent phases, interface layer, dimensions of the ME composites, different operating modes, etc. However, the detailed information about the characterization of ME coupling in ME composites is not provided yet. Therefore, in this tutorial paper, we are giving an insight into the details of measurements of ME voltage coefficient of ME composites both at off-resonance and resonance conditions. A symmetric type Gelfenol/PMN-PZT/Gelfenol ME composites were fabricated by sandwiching (011) 32-mode PMN-PZT single crystal between two Galfenol plates by epoxy bonding are used for the example of ME coupling measurement. The details about the experimental setup used for the measurement of ME voltage coefficient are provided. Furthermore, a step-by-step measurement of ME voltage coefficient using computerized program is demonstrated. We believe the present experimental measurement details can help readers to understand the concept of ME coupling and its analysis.

The magnetoelectric characteristics on layered Ni-PZT-Ni, Co, Fe composites by epoxy bonding for magnetic field sensor were investigated in the low-frequency range. The ME coefficient of Ni-PZT-Ni, Ni-PZT-Co and Ni-PZT-Fe composites reaches a maximum of 200 mV/cm·Oe at Hdc=110 Oe, 106 mV/cm·Oe at Hdc=90 Oe and 87 mV/cm·Oe at Hdc=160 Oe, respectively. A trend of ME charateristics on Ni-PZT-Co, Ni-PZT-Fe composites was similar to that of Ni-PZT-Ni composites. The ME output voltage shows linearly proportional to ac field Hac and is about 0∼150 mV at Hac=0∼7 Oe and f=110 Hz in the typical Ni-PZT-Ni sample. The frequency shift effect due to the load resistance RL shows that the frequency range for magnetic field sensor application can be modulated with appropriate load resistance RL. This sample will allow for a low-magnetic ac field sensor in the low-frequency (near f=110 Hz).