Journal of Electrical and Electronic Materials

"Material removal"

Effect of Pad Thickness on Removal Rate and Within Wafer Non-Uniformity in Oxide CMP: Jae Hyun Bae, Hyun Seop Lee, Jae Hong Park, Hideaki Nishizawa, Masaharu Kinoshita, Hae Do Jeong; J Korean Inst Electr Electron Mater Eng 2010;23(5):358-363. Published online May 1, 2010; DOI: https://doi.org/10.4313/JKEM.2010.23.5.358

Citations

Citations to this article as recorded by

Effects of CMP Retaining Ring Material on the Performance of Wafer Polishing
Ki-Won Park, Eun-young Kim, Dong-Sam Park
Journal of the Korean Society of Manufacturing Process Engineers.2020; 19(3): 22. CrossRef
Effects of Insert Materials of Retaining Ring on Polishing Finish in Oxide CMP
Ki-Won Park, Dong-Sam Park
Journal of the Korean Society of Manufacturing Process Engineers.2019; 18(8): 44. CrossRef
Finite Element Analysis on Dynamic Viscoelasticity of CMP Polishing Pad
Byeongjun Pak, Dasol Lee, Seonho Jeong, Hyunjin Kim, Haedo Jeong
Journal of the Korean Society for Precision Engineering.2019; 36(2): 177. CrossRef

Characteristics of Friction Affecting CMP Results: J Korean Inst Electr Electron Mater Eng 2004;17(10):1041-1048. Published online October 1, 2004; DOI: https://doi.org/10.4313/JKEM.2004.17.10.1041

Citations

Citations to this article as recorded by

Material Removal Mechanism of CMP Pad by CVD Conditioner Cutting Edges
Jiho Shin, Jongmin Jeong, Yeongil Shin, Haedo Jeong
Journal of the Korean Society for Precision Engineering.2026; 43(7): 671. CrossRef
Effect of pad’s surface deformation and oscillation on monocrystalline silicon wafer surface quality
Woong-Kirl Choi, Seong-Hyun Kim, Seung-Geon Choi, Eun-Sang Lee, Chul-Hee Lee
International Journal of Precision Engineering and Manufacturing.2014; 15(11): 2301. CrossRef
Evaluation of the wafer polishing pad capacity and lifetime in the machining of reliable elevations
Eun-Sang Lee, Ji-Wan Cha, Seong-Hyun Kim
International Journal of Machine Tools and Manufacture.2013; 66: 82. CrossRef