Journal of Electrical and Electronic Materials

Regular Paper : Thermoelectric Properties of Bi2Te3 Films Grown by Modified MOCVD with Substrate Temperatures: Hyun Woo You, O Jong Kwon, Kwang Chon Kim, Won Chel Choi, Chan Park, Jin Sang Kim; J Korean Inst Electr Electron Mater Eng 2011;24(4):340-344. Published online April 1, 2011; DOI: https://doi.org/10.4313/JKEM.2011.24.4.340

Abstract
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Thermoelectric bismuth telluride (Bi2Te3) films were deposited on 4° off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than 400℃. However, three dimensional growth mode (3D) was observed at substrate temperature higher than 400℃. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that Bi2Te3 films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 μV/K and the power factor was 1.86×10-3 W/mK2 at the substrate temperature of 400℃. Bi2Te3 films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

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A Study of Properties of GaN and LED Grown using In-situ SiN Mask: J Korean Inst Electr Electron Mater Eng 2005;18(10):945-949. Published online October 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.10.945

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