Copper manganite thin films were fabricated on SiNx/Si substrate by metal organic decomposition (MOD) process. They were burned-out at 400℃ and annealed at various temperatures (400∼800℃) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganitefilm with a cubic spinel structure was well developed at 500℃ which confirmed by XRD and HRTEM analysis. It showed a low resistivity (47.5 Ω·cm) at room temperature and high NTCR characteristics of-4.12%/℃ and -2.15%/℃ at room temperature and 85℃, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to 600℃. However, the appearance of secondary phase at temperatures higher than 600℃ lead to deteriorate the NTCR characteristics.

In this paper, fabricated by MEMS uncooled micro-bolometer detector for the study in the infrared sensitivity enhancement. Absorption layer SiOx-Metal series MDTF (metal-dielectric thin film) by high absorption rate and has a high thermal coefficient of resistance, low noise characteristics were implemented. Then MDTF were made in a vacuum deposition method. And MDTF for the analysis of the physical properties of silicon wafers were fabricated, TCR (temperature coefficient of resistance) value was made in order to measure the glass wafer and FT-IR (Fourier Transform Infrared spectroscopy) values were made in order to measure the germanium window. The analyzed results of MDTF -3 [%/K] has more characteristics of the TCR. And 8∼12 um wavelength region close to 70% in the absorption characteristic.