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"Multi-layer ceramic capacitor"

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"Multi-layer ceramic capacitor"

Dielectric Characteristics of (BaCaSr)(TixZr1-x)O3 Dielectric Ceramic with Temperature Compensation Capacitor Characteristics
Yoo Jung Choi, Hong Sun Lee, Jung Rag Yoon
J Electr Electron Mater 2025;38(4):376-382.   Published online July 1, 2025
DOI: https://doi.org/10.4313/JKEM.2025.38.4.4
This study developed a dielectric composition for high-capacitance MLCCs with C0G and U2J temperature compensation characteristics (Class I) under reducing conditions. The potential application of this composition in highpermittivity class I MLCCs was examined. Using (Ba₀.₂₄Ca₀.₁₆Sr₀.₆)(TiₓZr₁₋ₓ)O₃. XRD analysis showed that secondary phases like Sr₂TiO₄ and TiO₂ formed at higher Ti content, affecting the stoichiometric balance. Adjusting the Ti/Zr molar ratio resulted in a dielectric constant of 41.2 ~ 105, a dielectric loss of 0.082 ~ 0.174%, and insulation resistance above 1.6 × 1013 ohms at 25℃. The TCC shifted from C0G to U2J as the Ti/Zr ratio increased, but the composition enabled the design of high-capacitance and high-voltage MLCCs with favorable dielectric and electrical properties.
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Electrical Properties of (Ba0.27CaSr)(Zr0.95Ti0.05)O₃ Dielectric Ceramic with C0G Temperature Characteristics
Hong Sun Lee, Jung Rag Yoon
J Electr Electron Mater 2024;37(6):662-667.   Published online November 1, 2024
DOI: https://doi.org/10.4313/JKEM.2024.37.6.13
In this study, the electrical properties of a C0G (class 1 ceramic) dielectric composition with internal reducibility, specifically (Ba0.27CaSr)(Zr0.95Ti0.05)O₃, were investigated by fixing Ba at the A site and varying the Ca/Sr molar ratio. The potential application of this composition in high-permittivity C0G MLCCs was examined. The powder was calcined at 1,150℃ for 2 hours, as determined by TG-DTA analysis, and the resulting powder was ground to achieve a particle size (D50) of 0.35 to 0.4 μm and a specific surface area (BET) of 4.5 to 5.0 g/m². With a Ca/Sr molar ratio of 0.3, the composition (Ba0.27Ca0.17Sr0.56) (Zr0.95Ti0.05)O₃ exhibited electrical properties with a permittivity of 41.9, a loss of less than 0.008%, and an insulation resistance exceeding 2.2×10¹³ Ω. The feasibility of using this composition for high-capacitance C0G MLCCs was confirmed.
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Characterization of the Annealing Effect of 0.5 % Ce-doped Ba(Zr0.2Ti0.8)O3 Thin Films Grown by RF Magnetron Sputtering Method
Won Seok Choi, Yang Seob Perk, Jun Sin Yi, Byung You Hong
J Electr Electron Mater 2003;16(5):361-364.   Published online May 1, 2003
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