TFTs technologies with as high mobility as possible is essential for high-performance large displays. TFTs using nanocrystalline silicon thin films can achieve higher mobility. In this work, the change of the crystalline volume fraction at different hydrogen dilution ratios was investigated by depositing nc-Si:H thin films using PECVD. It was observed that increasing hydrogen dilution ratio increased not only the crystalline volume fraction but also the crystallite size. The thin films with a high crystalline volume fraction (55%) and a low defect density (10¹⁷ cm^-3·eV^-1) were used as top gate TFTs channel layer, leading to a high mobility (55 ㎠/V·s). We suggest that TFTs of high mobility to meet the need of display industries can be benefited by the formation of thin film with high crystalline volume fraction as well as low defect density as a channel layer.

This paper reports the microstructure and electrochemical properties of Si-Al-Fe ternary amorphous alloys prepared by rapid solidification as an anode for lithium secondary batteries. The microstructure was analyzed using XRD and HR-TEM with EDS mapping. In accordance with DSC analysis, annealing was performed to crystallize the active nano-Si in the amorphous alloy. Thus, nano-Si forms (~80 nm) embedded in the matrix alloy, such as Fe₂Al₃Si₃, FeSi₂, and Fe_0.42Si_2.67, were successfully synthesized. The electrode based on the Si-Al-Fe ternary alloy delivered an initial discharge capacity of approximately 700 mAh ^g-1, and exhibited a high Coulombic efficiency of 99.0~99.6% from the 2^nd to 70^th cycles.