Off-axis magnetron sputtering was used for the crystallized ITO thin films deposition at various temperatures from 25 to 120t. The ITO thin films were crystallized at 50t for Si (001) substrates and at 75t for PET substrate. The I`J`O thin films grown onto PET substrate at 120t were crystallized with a (222) preferred orientation. The 160-nm thick ITO films showed a resistivity of about 7 x 10 ? cm and a transmittance of about 84% at a wavelength of 550 rim. Off-axis sputtering can be applied for low temperature crystallization of the ITO films.

In this study, off-axis magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about 120℃ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The ITO thin films grown on PET substrate at 120℃ were crystallized with a (222) preferred orientation. 58-nm thick ITO films showed a resistivity of about 2 x 10-4 n·cm and a transmittance of about 75% at a wavelength of 550 nm. The transmittance of the ITO thin films by an insertion of SiO2 thin films on ITO films was improved.