A thin metal-embedding Schottky device was fabricated for an efficient photoelectric device. Semitransparent thick of 10 nm metal layers were deposited by sputtering of Ag and Ni on a Sisubstrate. The (111) N-type Si wafers with one-side polished, 450∼500 ㎛ and resistivity 1∼20 Ω·㎝were used. High rectifying ratio about 100 from Ni-Schottky device was achieved. This design wouldprovide an effective scheme for high-performing photoelectric devices.

Presented herein are the results of the study that was conducted on the electrical characteristics of organic field-effect transistors based on poly(3-hexylthiophene), particularly the thickness and annealing temperature of their active layer is varied. The changes in field-effect mobility and current on/off ratio were explored. It was observed that both increasing annealing temperature from 60℃ to 100℃ and various concentrations influence the trade-off relations between the mobility and current on/off ratio. The surface morphology of the 2-μm2 area with various thicknesses was scanned via atomic-forcemicroscopy(AFM) to verify the relationship between surface morphology, which is related to the thickness of the film, and device performance.