SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. The polytype of grown crystal on the seed crystal with lower rms value was confirmed to be 6H-SiC. On the other hand, all SiC crystals grown on seed crystals with different seed orientation were proven to be 6H-SiC. The surface roughness of seed crystals had no effect on the crystal structure of the grown crystals. However, the crystal quality of 6H-SiC single crystals grown on the on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on the off-axis seed.

In this study, SiC single-crystal ingots were prepared on two seed crystals with different doping level by using the physical vapor transport (PVT) technique; then, SiC crystal wafers sliced from the grown SiC ingot were systematically investigated to find the effect of seed doping level on the doping concentration and crystal quality of the SiC. To exclude extra effects induced by adjustment of the process parameters, we simultaneously grew the SiC crystals on two seed crystals with different level, which were fabricated from previous two SiC crystal ingots.