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"Porous silicon"

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"Porous silicon"

Effects of Annealing Temperature and Atmosphere on Properties of Porous Silicon
Hyun Young Choi, Kwang Gug Yim, Su Min Jeon, Min Young Cho, Ghun Sik Kim, Min Su Kim, Dong Yul Lee, Jin Soo Kim, Jong Su Kim, Jae Young Leem
J Korean Inst Electr Electron Mater Eng 2010;23(8):581-586.   Published online August 1, 2010
DOI: https://doi.org/10.4313/JKEM.2010.23.8.581
Abstract: The porous Si (PS) was annealed at various temperature in air, argon, and nitrogen atmosphere. Structural and optical properties of the annealed PS were investigated by scanning electron microscopy (SEM) and photoluminescence (PL). It is found that the shape of pore is changed from circle to channel as increasing annealing temperature which was annealed in air and argon atmosphere. In case of PS annealed in nitrogen atmosphere, the shape of pore is changed from channel to circle with increase annealing temperature from 600 to 800℃. The PL peak position is blue-shifted with increasing annealing temperature. As annealing temperature increases, the PL intensity of the PS annealed in argon is decreased but that of the PS annealed in nitrogen is increased. It might be due to the formation of Si-N bonds and it passivates the non-radiative centers which is Si dangling bonds on the surface of the PS.
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Porous Si Layer by Electrochemical Etching for Si Solar Cell
Soo Hong Lee
J Korean Inst Electr Electron Mater Eng 2009;22(7):616-621.   Published online July 1, 2009
DOI: https://doi.org/10.4313/JKEM.2009.22.7.616
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SAXS and AFM Study on Porous Silicon Prepared by Anodic Etching in HF-based Solution
J Korean Inst Electr Electron Mater Eng 2004;17(11):1218-1223.   Published online November 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.11.1218

Citations

Citations to this article as recorded by  
  • Role of surface vibration modes in Si nanocrystals within light emitting porous Si at the strong confinement regime
    M. Mahdouani, S. Gardelis, A. G. Nassiopoulou
    Journal of Applied Physics.2011;[Epub]     CrossRef
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C-V Response Properties of Alcohol Vapor Sensors Based on Porous Silicon
Seong Jeen Kim, Sang Hoon Lee, Bok Gil Choi, Man Young Sung
J Korean Inst Electr Electron Mater Eng 2004;17(6):592-597.   Published online June 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.6.592
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Electrical Properties of Alcohol Vapor Sensors Based on Porous Silicon
Youi Park Kwang, Suk Kang Kyung, Jeen Kim Seong, Hoon Lee Sang, Gil Choi Bok, Young Sung Man
J Korean Inst Electr Electron Mater Eng 2003;16(12s):1232-1236.
DOI: https://doi.org/10.4313/JKEM.2003.16.12s.1232
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