In this paper, LED lighting system is realized by using Bluetooth wireless communications and smartphones. A blue tooth module with a lighting control function is manufactured by miniaturizing a development board of TI company and the volume of LED dimming system as a whole is reduced. And atrial product is materialized by designing a hardware composed of the manufactured blue tooth module, LED down light equipped with degree warm white and cool white, and 2-channel LED driver; and LED dimming software. The materialized trial product is controled in terms of the brightness and color temperature of LED light source using an application of a smartphone. The experiment showed that the users can easily control the intensity of illumination of LED light source by using the scroll bar of the applications of smartphones. In addition, the color temperatures of both warm white and cool white can be controlled, and when the color temperature of the trial product using the manufactured Bluetooth module is compared with that of a trial product of TI company, they show the same color temperatures.

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using Bi2Mg2/3Nb4/3O7 (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/SiO2/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

In this study, Cu(In, 5,Ga)Se2 (CIGS) thin films were prepared on the Mo coated soda-lime glass by the DC magnetron sputtering and a subsequent selenization process. For the selenization process. selenization rapid thermai process(WIP) with cracker cell, which was helpful to smaller an atomic of Se, was adopted. To make GIGS layer, they were then annealed with the cracked Se. Based on this selenization method, we made several GIGS thin film and investigated the effects of In deposition time, and selenization time. Through x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and atomic force microscopy (AFM), it is found that the Mo/In/CuGa structure and the high sputtering power shows the dominant chalcopyrite structure and have a uniform distribution of the grain size. The CIGS films with the In deposition time of 5 ruin has the best structure due to the smooth surface. And CIGS films with the selenization time of 50 mm show good crystalline growth without any voids.

Rapid thermal processing (RTP) abruptly decreases the time required to perform solar cell processes. RTP were used to form emitter of crystalline silicon solar cells. The emitter sheet resistance is studied as a function of time and temperature. The
objective
of this study is reduction of doping process time with same performance. Emitter diffusion was carried out by using a spin oil doping and a RTP. Rapid thermal diffusion was performed in the temperature range of 700750 for Tm 30s- 15 m. Thermal budgets yielded a 50 2/sq emitter using a P509 source. To reduce process time and get high efficiency, rapid thermal diffusion by JR lamp was employed in air atmosphere at 700 t for 15 m.

Limiting thermal exposure time using rapid thermal processing(RTP) has emerged as promising simplified process for manufacturing of solar cell in a continuous way. This paper reports the simplification of co-firing using RTP. Actual temperature profile for co-firing after screen printing is a key issue for high-quality metal-semiconductor contact. The plateau time during the firing process were varied at 450℃ for 10~16 sec. Glass frit in Ag paste etch anti-reflection layer with plateau time. Glass frit in Ag paste is important for the Ag/Si contact formation and performances of crystalline Si solar cell. We achieved 17.14% efficiency with optimum conditions.