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"SAM"

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"SAM"

Neuromorphic Characteristics of Sol-Gel AlOx-Based Floating Gate Memory Transistors with Phosphonic Acid Self-Assembled Monolayers
Hee-won Hwang, Sneha Bhise, Young-seok Song, Tae-wook Kim
J Electr Electron Mater 2025;38(3):336-345.   Published online May 1, 2025
DOI: https://doi.org/10.4313/JKEM.2025.38.3.15
Neuromorphic computing, inspired by the biological mechanisms of neural signal transmission, has emerged as a promising technology for efficient and parallel data processing with minimal power consumption. In this study, we developed floating-gate organic thin-film transistors (OTFTs) with self-assembled monolayer (SAM)-based tunneling layers to mimic the characteristics of artificial synapses. The tunneling layers were formed using mixed phosphonic acid SAMs with varying ratios of octadecylphosphonic acid (ODPA) and 12-pentafluorophenoxydodecylphosphonic acid (PFPA). The influence of these ratios on the memory and neuromorphic characteristics of the devices was systematically evaluated. Our results revealed that the ODPA ratio significantly impacts the hysteresis window, with higher ODPA content yielding improved memory characteristics. Conversely, the PFPA : ODPA ratio of 2:1 exhibited the lowest non-linearity (NL = 0.48), demonstrating the potential for highly accurate weight updates in neuromorphic devices. Additionally, pulse width modulation studies showed that a pulse width of 100 ms optimized the linearity and stability of long-term potentiation (LTP) and depression (LTD) characteristics. The combination of sol-gel processed AlOx as a floating-gate layer and tailored SAM-based tunneling layers allowed for precise control of device performance. These findings highlight the importance of molecular engineering in designing SAM layers to balance memory retention and neuromorphic functionality. This study provides a pathway for advancing organic floating-gate transistors as a core component in next-generation neuromorphic computing systems.
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Thin Films and Sensors : A Study on the Design of a ROIC for Uncooled Infrared Ray Detector Using Differential Delta Sampling Technique
Eun Sik Jung, Oh Sung Kwan, Po Lee, Se Jin Jeong, Man Young Sung
J Electr Electron Mater 2011;24(5):387-391.   Published online May 1, 2011
A uncooled infrared ray sensor used in an infrared thermal imaging detector has many advantages. But because the uncooled infrared ray sensor is made by MEMS (micro-electro-mechanical system) process variation of offset is large. In this paper, to solve process variation of offset a ROIC for uncooled infrared ray sensor that has process variation of offset compensation technique using differential delta sampling and reference signal compensation circuit was proposed. As a result of simulation that uses the proposed ROIC, it was possible to acquire compensated output characteristics without process variation of offsets.
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A Study on Double Sampling Design of CMOS ROIC for Uncooled Bolometer Infrared Sensor using Reference Signal Compensation Circuit
Young Seok Bae, Eun Sik Jung, Ju Hyun Oh, Man Young Sung
J Electr Electron Mater 2010;23(2):89-92.   Published online February 1, 2010
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A Study on Numerical Analysis of the AC Loss in a Single-Layer Superconducting Cable Sample
Zhu Yong Li, Yong Hu Ma, Kyung Woo Ryu, Si Dole Hwang
J Electr Electron Mater 2009;22(7):606-611.   Published online July 1, 2009
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A Dielectric Constant Measurement Method of Unprepared Samples
Won Hui Lee
J Electr Electron Mater 2008;21(10):896-900.   Published online October 1, 2008
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Work Function Increase of ITO Modified by Self Assembled Monolayer for Organic Electrical Devices
J Electr Electron Mater 2006;19(6):563-567.   Published online June 1, 2006
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Electronic Ceramics ; Ferroelectirc Properties of Sm-doped PZT Thin Films
Yeong Hun Son, Gyeong Tae Kim, Chang Il Kim, Byeong Gi Lee, Ui Gu Jang
J Electr Electron Mater 2004;17(2):178-183.   Published online February 1, 2004
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Fabrication and Characteristics of Tunable Butt-Coupled Sampled-grating Distributed Bragg Reflector (SG-DBR) Laser Diodes
Ji Myeon Lee, Su Hwan O, Hyeon Seong Go, Mun Ho Park
J Electr Electron Mater 2004;17(1):16-20.   Published online January 1, 2004
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