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"Semiconductor processes"

Nano Materials and Devices : Molecular Dynamics Simulations Study on Abrasive`s Speed Change Under Pad Compression
Gyoo Yeong Lee, Jun Ha Lee, Tae Eun Kim
J Electr Electron Mater 2012;25(7):569-573.   Published online July 1, 2012
We investigated the speed change of the diamond spherical abrasive during the substrate surface polishing under the pad compression by using classical molecular dynamics modeling. We performed three-dimensional molecular dynamics simulations using the Morse potential functions for the copper substrate and the Tersoff potential function for the diamond abrasive. As the compressive pressure increased, the indented depth of the diamond abrasive increased and then, the speed of the diamond abrasive along the direction of the pad moving was decreased. Molecular simulation result such as the abrasive speed decreasing due to the pad pressure increasing gave important information for the chemical mechanical polishing including the mechanical removal rate with both the pad speed and the pad compressive pressure.
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