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"Shield"

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"Shield"

EMI (Electromagnetic Interference) Shielding Properties of Barium-Based Ferrite Thin Films Prepared by Spin Spray Method
Hye Ryeong Oh, Yeon-ju Park, Woo-sung Lee, Chan-sei Yoo, Myong-jae Yoo, Intae Seo
J Korean Inst Electr Electron Mater Eng 2024;37(2):195-201.   Published online March 1, 2024
DOI: https://doi.org/10.4313/JKEM.2024.37.2.11
The low-temperature deposition of BaNi(2-x)CoxFe16O27 thin films with a Ba hexaferrite structure for electromagnetic shielding was studied. The BaNi(2-x)CoxFe16O27 thin films produced through the spin spray process were suitable for thin film deposition on a flexible substrate because it crystallized well at low temperature below 90℃. The change in shielding characteristics depending on the Co content of the BaNi(2-x)CoxFe16O27 thin film was investigated, and excellent shielding characteristics with S21 of -1 dB were obtained in a wide frequency range of 26~40 GHz when the Co content was 0.4 or more. The purpose of this study is to analyze changes in shielding properties caused by change in Co content in relation to phase changes in BaNi(2-x)CoxFe16O27 and obtain basic data for developing excellent flexible electromagnetic wave shielding materials.
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Effect of CNTs on Electrical Properties and Thermal Expansion of Semi-conductive Compounds for EHV Power Cables
Jae-gyu Han, Jae-shik Lee, Dong-hak Kim
J Korean Inst Electr Electron Mater Eng 2023;36(6):603-608.   Published online November 1, 2023
DOI: https://doi.org/10.4313/JKEM.2023.36.6.11
Carbon black with high purity and excellent conductivity is used as a conductive filler in the semiconductive compound for EHV (Extra High Voltage) power cables of 345 kV or higher. When carbon black and CNT (carbon nanotube) are applied together as a conductive filler of a semiconductive compound, stable electrical properties of the semiconductive compound can be maintained even though the amount of conductive filler is significantly reduced. In EHV power cables, since the semi-conductive layer is close to the conductor, stable electrical characteristics are required even under high-temperature conditions caused by heat generated from the conductor. In this study, the theoretical principle that a semiconductive compound applied with carbon black and CNT can maintain excellent electrical properties even under high-temperature conditions was studied. Basically, the conductive fillers dispersed in the matrix form an electrical network. The base polymer and the matrix of the composite, expands by heat under high temperature conditions. Because of this, the electrical network connected by the conductive fillers is weakened. In particular, since the conductive filler has high thermal conductivity, the semiconductive compound causes more thermal expansion. Therefore, the effect of CNT as a conductive filler on the thermal conductivity, thermal expansion coefficient, and volume resistivity of the semiconductive compound was studied. From this result, thermal expansion and composition of the electrical network under high temperature conditions are explained.
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Analysis of Electrical Characteristics of Shield Gate Power MOSFET for Low on Resistance
Ey-goo Kang
J Korean Inst Electr Electron Mater Eng 2017;30(2):63-66.   Published online February 1, 2017
DOI: https://doi.org/10.4313/JKEM.2017.30.2.63
This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of 3 ㎛.
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Simultaneous Realization of Electromagnetic Shielding and Antibacterial Effect of Al Doped ZnO Thin Films onto Glass Substrate
Hyung Jin Choi, Soon Gil Yoon
J Korean Inst Electr Electron Mater Eng 2016;29(5):279-283.   Published online May 1, 2016
DOI: https://doi.org/10.4313/JKEM.2016.29.5.279
In this study, we intended to achieve both antibacterial properties and electromagnetic shielding using the Al-doped ZnO (AZO) films. FTS (Facial Target Sputtering) magnetron sputtering was used for the AZO thin films instead of the conventional RF sputtering because the FTS sputtering could avoid the damage for the plasma as well as fabrication of thin films with a high quality. The 300-nm thick AZO thin films grown on glass substrate showed a resistivity of about 7 × 10-4 Ω-cm and a transmittance of about 90% at a wavelength of 550 nm. AZO thin films were investigated for the electromagnetic shielding effectiveness measured by 2-port network method at 1.5 ~ 3 GHz. The AZO (300 nm)/glass films showed an EMI shielding effectiveness of approximately 27 dB. An antibacterial effect was measured by the film attachment method (JIS Z 2801). The percent reductions of bacteria by AZO films were 99.99668% and 99.99999% against Staphylococcus aureus and Escherichia coli, respectively.
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Electric Field Strength and Shielding Effectiveness Comparison According to the Size of Shielding Facility
Ho Jae Kang, Chang Su Huh, Jeong Ju Bang, Jin Su Choi, Woo Chul Park
J Korean Inst Electr Electron Mater Eng 2014;27(4):221-225.   Published online April 1, 2014
DOI: https://doi.org/10.4313/JKEM.2014.27.4.221
In modern times, threat of high power electromagnetic wave is increasing. When the electrical grid and communication network are attacked by these high power electromagnetic wave, the whole infrastructure is paralyzed. To protect the infrastructure from these high power electromagnetic wave threat, the shielding facility that can block high power electromagnetic wave is constructed. Also shielding effectiveness evaluation about the constructed facility is important. But, because of space efficiency and saving of construction cost to construct the actual shielding facility, the shielding room wall is generally adjacent to exterior concrete structures. As space between shielding facility wall and concrete structures is very small, arranging the transmitting antenna exterior shielding facility is realistically difficult. Therefore, in this research, The shielding effectiveness measurement plan in the state of exterior narrow space of HEMP shielding facility is presented. And to apply this plan, The influence of shielding effectiveness according to the size of the shielding facility is analyzed.
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High Voltage and Discharge Engineering : Frequency Spectrum Analysis of Series Arc and Corona Discharges
Gyung Suk Kil, Kwang Seok Jung, Dae Won Park, Sun Jae Kim, Ju Seop Han
J Korean Inst Electr Electron Mater Eng 2010;23(7):554-559.   Published online July 1, 2010
DOI: https://doi.org/10.4313/JKEM.2010.23.7.554

Citations

Citations to this article as recorded by  
  • A Study on the Operation Characteristics of Arc Fault Detection Device under Arc Generation
    Heejun Kwon, SungHwan Kim, Jihee Lee, Kiseok Kim, Haiyoung Jung
    International Journal of Fire Science and Engineering.2024; 38(2): 27.     CrossRef
  • Highly Sensitive Partial Discharge Sensor with Remote Monitoring Capabilities
    Kyoo-Nam Choi
    The Journal of the Korea institute of electronic communication sciences.2015; 10(3): 349.     CrossRef
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Behavior of Surface Flashover Depending on Shape and Gap Distance of End Shield in Vacuum Interrupter
Jae Hun Yoon, Kee Jo Lim
J Korean Inst Electr Electron Mater Eng 2010;23(2):169-173.   Published online February 1, 2010
DOI: https://doi.org/10.4313/JKEM.2010.23.2.169
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A Calculation of the Cosmic Radiation Dose of a Semiconductor in a Geostationary Orbit Satellite Depending on the Shield Thickness
Jeong Hwan Heo, Bong Jin Ko, Bum Jin Chung
J Korean Inst Electr Electron Mater Eng 2009;22(6):476-483.   Published online June 1, 2009
DOI: https://doi.org/10.4313/JKEM.2009.22.6.476

Citations

Citations to this article as recorded by  
  • Modeling of paths and energy losses of high-energy ions in single-layered and multilayered materials
    D I Tishkevich, S S Grabchikov, E A Grabchikova, D S Vasin, S B Lastovskiy, A S Yakushevich, D A Vinnik, T I Zubar, I V Kalagin, S V Mitrofanov, D V Yakimchuk, A V Trukhanov
    IOP Conference Series: Materials Science and Engineering.2020; 848(1): 012089.     CrossRef
  • Radiation Exposure of an Astronaut subject to Various Space Radiation Environments and Shielding Conditions
    Myeong-Seon Chae, Bum-Jin Chung
    Journal of the Korean Society for Aeronautical & Space Sciences.2010; 38(10): 1038.     CrossRef
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A Study on the Design of Compact Polymer Bushing with Inner Control Shield
Han Goo Cho, Dae Hoon Yoo, Hyung Kyung Kang
J Korean Inst Electr Electron Mater Eng 2009;22(5):436-442.   Published online May 1, 2009
DOI: https://doi.org/10.4313/JKEM.2009.22.5.436
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Optimal Design of a Shield in Vacuum Interrupter
J Korean Inst Electr Electron Mater Eng 2007;20(4):374-380.   Published online April 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.4.374
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Analysis on Current Distribution in Multi-Layer HTSC Power Cable with Shield Layer
J Korean Inst Electr Electron Mater Eng 2006;19(3):273-279.   Published online March 1, 2006
DOI: https://doi.org/10.4313/JKEM.2006.19.3.273
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A Study on the Measurement of Small Partial Discharges in a Low-voltage Induction Motor
J Korean Inst Electr Electron Mater Eng 2005;18(10):960-964.   Published online October 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.10.960
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Thermal Properties According to Ionic Impurities of Semiconductive Material in Power Cable
J Korean Inst Electr Electron Mater Eng 2004;17(12):1326-1331.   Published online December 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.12.1326
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