Dye-sensitized solar cells (DSSCs) suffer from efficiency limitations due to interfacial charge recombination at the TiO₂/dye/electrolyte interface. In this study, aminopropyltrimethoxysilane (APS) was introduced onto nanoporous TiO₂ photoelectrodes via a dip-coating process with controlled coating times to investigate the effect of silanization time on interfacial charge transport behavior. Unlike concentration-driven structural modification, this work focuses on the evolution of the APS-modified interface governed by reaction time. The DSSC with 30 min APS treatment exhibited the highest power conversion efficiency of 5.34%, representing a 19% enhancement compared to the untreated device (4.49%), mainly due to increased short-circuit current density and open-circuit voltage. However, prolonged coating times (2 h and 24 h) resulted in a significant decrease in photocurrent density, leading to reduced device performance despite partial improvement in recombination resistance. These results are attributed to the time-dependent evolution of the APS interfacial layer. At moderate coating time, APS provides effective surface functionalization, enhancing dye adsorption and suppressing interfacial recombination. In contrast, prolonged coating is expected to induce increased surface coverage and silane condensation, which can hinder electron injection and increase charge transport resistance. Therefore, the photovoltaic performance is governed by a trade-off between recombination suppression and charge injection efficiency, controlled by the silanization time. This study highlights the critical role of interfacial reaction kinetics in determining charge transport behavior and provides an effective strategy for optimizing DSSC performance through time-dependent interface engineering.
Dye adsorption is one of the most time-consuming processes in the fabrication of dye-sensitized solar cells (DSSCs), typically requiring approximately 24 h at room temperature. In this study, the effect of adsorption temperature and time on photovoltaic performance of DSSCs was investigated in order to reduce processing time and improve device productivity. Nanoporous TiO2 photoelectrodes were immersed in N719 dye solution at 60°C for 3 h, 10 h, 17 h, and 24 h, and their performance was compared with that of cells sensitized at room temperature for 24 h. Photovoltaic characterization under AM 1.5 illumination showed that DSSCs sensitized at 60°C exhibited improved performance compared to those sensitized at room temperature. The device sensitized at 60°C for 3 h showed comparable or higher conversion efficiency than the reference cell sensitized for 24 h at room temperature. The improvement in device performance is attributed to enhanced dye adsorption kinetics resulting from increased reaction rate between the carboxyl groups of N719 dye molecules and hydroxyl groups on the TiO2 surface. Electrochemical impedance spectroscopy analysis revealed reduced recombination resistance at the TiO2/dye/electrolyte interface for cells sensitized at elevated temperature. UV–Vis absorption analysis confirmed increased dye loading on the TiO2 surface for the 60°C condition. These results demonstrate that elevated temperature dye adsorption significantly reduces processing time while maintaining photovoltaic performance, providing an effective strategy for improving manufacturing efficiency of DSSCs.
Organic solar cells based on bulk heterojunction (BHJ) structures have attracted considerable attention because of their low fabrication cost, mechanical flexibility, and compatibility with solution-processing techniques. In BHJ organic photovoltaic devices, nanoscale morphology and crystallinity of the photoactive layer critically influence photovoltaic performance. In this study, the effects of solvent selection and thermal annealing on crystallization evolution and photovoltaic characteristics of P3HT:PCBM organic solar cells were systematically investigated. Three different solvents, including toluene, chlorobenzene (CB), and dichlorobenzene (DCB), were employed for active-layer fabrication, followed by post-thermal annealing treatment. UV–visible absorption spectroscopy revealed solvent-dependent differences in molecular ordering and intermolecular π–π interactions within the active layer. X-ray diffraction analysis confirmed that thermal annealing significantly enhanced crystallinity and lamellar ordering of P3HT domains, particularly for CB-processed films. Electrical characterization demonstrated that solvent evaporation behavior strongly affects photovoltaic performance. Among the investigated devices, the thermally annealed CB-processed device exhibited the highest power conversion efficiency of 1.83% with an enhanced short-circuit current density of 7.057 mA cm⁻². The improved device performance is attributed to optimized crystallization behavior and balanced nanoscale phase separation induced by the moderate evaporation characteristics of CB. In contrast, although DCB-assisted films exhibited relatively strong optical absorption and enhanced crystallinity, excessively slow solvent evaporation likely induced excessive aggregation and coarse phase separation, limiting efficient photovoltaic characteristics. These results demonstrate that solvent engineering combined with thermal annealing is an effective strategy for controlling morphology evolution and crystallization behavior in P3HT:PCBM bulk heterojunction solar cells.
This study investigates the post-thermal treatment effects on the efficiency of silicon heterojunction solar cells, specifically examining the influence of annealing on p-type microcrystalline silicon oxide and ITO thin films. By assessing changes in carrier concentration, mobility, resistivity, transmittance, and optical bandgap, we identified conditions that optimize these properties. Results reveal that appropriate annealing significantly enhances the fill factor and current density, leading to a notable improvement in overall solar cell efficiency. This research advances our understanding of thermal processing in siliconbased photovoltaics and provides valuable insights into the optimization of production techniques to maximize the performance of solar cells.
This work focuses on improving the light-harvesting efficiency of thin-film silicon solar cells through innovative multi-architecture surface modifications. To create a regular optical structure, a lithographic process was performed to form it on a glass substrate through various etching processes, from Etch-1 to Etch-3. AZO was deposited on top of the structures and re-etched to create a multi-architectural surface. These surface-modified structures improved the light absorption and overall performance of the solar cell through changes in optical and physical properties, which we will analyze. In addition, we investigated the effect of post-cleaning on the etched glass structures through EDX analysis to understand the mechanism of the etching action. The results of this study are expected to provide important guidelines for the design and fabrication of solar cells and other photovoltaic devices.
Tandem or multijunction solar cells (MJSCs) can convert sunlight into electricity with higher efficiency (η) than single junction solar cells (SJSCs) by dividing the solar irradiance over sub-cells having distinct bandgaps. The efficiencies of various common SJSC materials are close to the edge of their theoretical efficiency and hence there is a tremendous growing interest in utilizing the tandem/multijunction technique. Recently, III-V materials integration on a silicon substrate has been broadly investigated in the development of III-V on Si tandem solar cells. Numerous growth techniques such as heteroepitaxial growth, wafer bonding, and mechanical stacking are crucial for better understanding of high-quality III-V epitaxial layers on Si. As the choice of growth method and substrate selection can significantly impact the quality and performance of the resulting tandem cell and the terminal configuration exhibit a vital role in the overall proficiency. Parallel and Series-connected configurations have been studied, each with its advantage and disadvantages depending on the application and cell configuration. The optimization of both growth mechanisms and terminal configurations is necessary to further improve efficiency and lessen the cost of III-V on Si tandem solar cells. In this review article, we present an overview of the growth mechanisms and terminal configurations with the areas of research that are crucial for the commercialization of III-V on Si tandem solar cells.
Recently many efforts have been made to develop a novel class of non-fullerene electron acceptor materials for highperformance organic solar cells. In this work, anthraquinone derivatives, TMAQ and THAQ, were prepared and their availability as electron acceptor materials for organic solar cells were investigated in terms of optical, thermal, electrochemical properties, and solar cell devices. Compared to TMAQ, a significant bathochromic shift of absorption band was observed for THAQ owing to intramolecular hydrogen-bond-assisted CT interactions. Thanks to the fused aromatic ring structure and benzoquinone unit, both TMAQ and THAQ exhibited a high thermal stability and an efficient electron reduction process. In particular, the intramolecular O-H---O=C hydrogen bond of THAQ plays an important role in improving the thermal stability and electron reduction properties. In the P3HT:acceptor solar cell system, THAQ-based devices had more than ca. 6 times higher power conversion efficiency than TMAQ -based devices. These results serve as a guide for developing high-efficient anthraquinonebased electron acceptor materials.
This paper describes why we must use graphene materials for solar cells and biosensors. It has been superior in several properties such as super-thin film, higher tensile strength, high current density, high thermal conductivity, and high mobility. Therefore, graphene is one of the emerging advanced materials because of its applicability in various electronic device applications. We investigated the requirements of graphene materials for the application of solar cells and biosensors. In addition, we discussed the research trends such as transducers in biosensors and transparent electrodes in solar cells. The research on graphene materials and their application will be beneficial and helpful for the near future.
Inorganic-organic hybrid perovskite solar cells have demonstrated considerable improvements, reaching 25.5% of certified power conversion efficiency in 2020 from 3.8% in 2009. In normal structured perovskite solar cells, TiO2 electrontransporting materials require heat treatment process at a high temperature over 450℃ to induce crystallinity. Inverted perovskite solar cells have also been studied to exclude the additional thermal process by using [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as a non-oxide electron-transporting layer. However, the drawback of the PCBM layer is a charge accumulation at the interface between PCBM and a metal electrode. The impact of bathocuproin (BCP) buffer layer on photovoltaic performance has been investigated herein to solve the problem of PCBM. 2-mM BCP-modified perovskite solar cells were observed to exhibit a maximum efficiency of 12.03% compared with BCP-free counterparts (5.82%) due to the suppression of the charge accumulation at the PCBM-Au interface and the resulting reduction of the charge recombination between perovskite and the PCBM layer.
Inorganic-organic hybrid perovskite solar cells have demonstrated a significant achievement by reaching a certified power conversion efficiency of 25.2% in 2019 as compared to that of 3.8% in 2009. However, organic hole conductors such as PTAA and spiro-OMeTAD are known to be expensive and unstable when they are exposed to operational conditions. In this study, the inorganic hole conductor CuSCN was used to overcome such concerns. The influence of dipropyl sulfide (DPS) and diethyl sulfide (DES) as CuSCN deposition solvents on the underlying perovskite active layer was investigated. DES solvent was observed to be advantageous in terms of CuSCN solubility and mild for the perovskite layer, thereby resulting in a power conversion efficiency of 16.9%.
Raman spectra of a-C:H thin films deposited with an unbalanced magnetron sputtering system showed that the G peak shifted to a higher wavenumber as the target power density increased and ID/IG ratio increased from 0.902 to 1.012. Moreover, the transmittance of a-C:H films fabricated at 60 nm tended to decrease with increasing target power density; at 550 nm in the visible light region, the transmittance decreased from 69% to 58%. The rms surface roughness values of the a-C:H thin films decreased with increasing target power density, and varied from 1.11 nm to 0.71 nm. In order to achieve efficient light trapping, the light scattering at the rough interface must be enhanced. Consequently, the surface roughness of the thin film will decrease with the target power density. Further, the refractive index and reflectivity of the a-C:H thin films increased with increasing target power density; however, the Brewster angle decreased with the target power density. Hence, dye-sensitized solar cells using an a-C:H antireflective coating increased the CE, VOC, and JSC by approximately 8.6%, 5.5%, and 4.5%, respectively.
Perovskite solar cells have received increasing attention in recent years because of their outstanding power conversion efficiency (exceeding 22%). However, they typically contain toxic Pb, which is a limiting factor for industrialization. We focused on preparing Pb-free perovskite films of Ag-Bi-I trivalent compounds. Perovskite thin films with improved optical properties were obtained by applying an anti-solvent (toluene) washing technique during the spin coating of perovskites. In addition, the surface condition of the perovskite film was optimized using a multi-step thermal annealing treatment. Using the optimized process parameters, AgBi2I7 perovskite films with good absorption and improved planar surface topography (root mean square roughness decreased from 80 to 26 nm) were obtained. This study is expected to open up new possibilities for the development of high performance AgBi2I7 perovskite solar cells for applications in Pb-free energy conversion devices.
In this study, e-beam equipment was used to form silver nanoparticles on thin films of TiO2 to increase the efficiency of dye-sensitized solar cells and improve the annealing process. TiO2 thin films with nanoparticle photoelectrodes were fabricated in individual units for use in dye-sensitized solar cells. The characteristics of dye-sensitized solar cells were compared to those of the prepared TiO2 photoelectrode with and without nanoparticles. The dye-sensitized solar cells with silver nanoparticles showed a significant increase in the electric current density compared with the pure TiO2 dye-sensitized solar cell and improved the solar conversion efficiency to 27.89%. The increased density of electric current increased the extent of light absorption of the dye owing to the plasmon resonance of the nanoparticles at the local surfaces. This phenomenon led to increased light scattering, which in turn increased the current density of the dye-sensitized solar cells and improved the solar conversion efficiency.
The computational fourier-transform moire (CFTM) method has been briefly explained and this method was used to perform strain analysis of a misfit dislocation in a strained Si/Si0.55Ge0.45 layer. An essential advantage of the CFTM method is that it does not require unwrapping, such that errors due to improper unwrapping can be excluded. The analysis results revealed that the Si layer was grown with tensile stress on Si0.55Ge0.45 and lattice constant of the Si layer along the growth direction was 1.9% smaller than that of Si0.55Ge0.45. On the other hand, strain of the misfit dislocation in the strained Si/Si0.55Ge0.45 layer was maximum at the dislocation core due to an extra half-plane and the exx and eyy values were positive and negative, respectively, along the direction of a burgers vector.
The power conversion efficiency of organic polymer solar cells was enhanced by introducing a ferroelectric polymer layer at the interface between active layer and metal electrode. The power conversion efficiency was increased by 50% through the enhancement of the open circuit voltage. To investigate the role of the ferroelectric layer on the dissociation process of the excitons, non-radiative portion of the exciton decay was directly measured by using photoacoustic technique. The results show that the ferroelectric nature of the buffer layer does not play any roles on the dissociation process of the excitons, which indicates the efficiency enhancement is not due to the ferroelectricity of the buffer layer.
DSSCs (dye-sensitized solar cells) based on TiO2/SiO2 multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.
n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below 670℃ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of 5.99 mΩ㎠ was shown for the optimum firing temperature of 865℃. Over 900℃, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of 40.2 mA/cm2, open-circuit voltage of 620 mV and convert efficiency of 19.11%.
The dielectric thin films applied to multi-colored semitransparent thin film solar cells have been extensively studied. In this work, we prepared GeSbTe and GeTe chalcogenide thin films using magnetron sputtering, and investigated their optical and phase-change properties to replace the dielectric films. The changes of surface morphology, sheet resistance, and X-ray diffraction of the Te-based chalcogenide films support the fact that the amorphous stability of GeTe films is superior to that of GeSbTe films. While both amorphous GeSbTe and GeTe films thinner than 30 nm have optical transparency between 5% and 60%, GeTe films transmit more visible light than GeSbTe films. It is confirmed by computer simulation that the color of semitransparent silicon thin film solar cells can be adjusted with the addition of GeSbTe or GeTe films. Since it is possible to adjust the contrast of the solar cells by exploiting the phase-change property, the two kinds of chalcogenide films are anticipated to be used as an optical layer in semitransparent solar cells.
A novel heteroleptic ruthenium(II) complex bearing a 4-picolinic acid unit as anchoring ligands (trans-dithiocyanato bis(4-picolinic acid)ruthenium(II) (trans-H1)) was synthesized and its chemical structure was identified by 1H-NMR, FT-IR and mass spectroscopy. The optical, thermal, electrochemical and dye adsorption properties of trans-H1 dye were investigated and compared with those of the gold standard ruthenium complex, Ru(4,4``-dicarboxy-2,2``-bipyridine)2cis(NCS)2 (N3). DSSCs based on trans-H1 dyes were examined under the illumination of AM 1.5 G, 100 mWcm-2 and exhibited typical photovoltaic properties with an open-circuit voltage (VOC) of 0.46 V, a short-circuit current (JSC) of 4.10 mA·cm-2, a fill factor (FF) of 60.4%, and a conversion efficiency (PCE) of 1.14%.
Rhodamine B (RhB) was utilized as a dye sensitizer for dye-sensitized solar cells (DSSCs) and its photovoltaic property was examined under the illumination of AM 1.5 G, 100 mWcm-2. DSSCs based on RhBexhibited typical photovoltaic properties with an open-circuit voltage (VOC) of 0.34 V, a short-circuit current (JSC) of 1.55 mA·cm-2, a fill factor (FF) of 50%, and a conversion efficiency (PCE) of 0.26%. In order to further improve the photovoltaic properties of RhB-based DSSCs, the effect of (i) incorporating a strong electron-donating NCS unit into the RhB molecular backbone, (ii) combining a bis-negatively charged zinc complex anion (Zn-dmit2, dmit=di-mercapto-dithiol-thione) with the amine cation of RhB, (iii) co-adsorbing RhB dyes with chenodeoxycholic acid (CDCA) molecules onto porous TiO2 electrodes, was investigated and discussed.
Ni ink for electrohydrodynamic (EHD) continuous jet printing has been developed by using Ni nanoparticles mixed with conhesiveness provider. EHD continuous jet printing was used in order to realize 20 μm pattern width. Ink stability was investigated by using Turbi-scan which monitors agglomeration and precipitation of nanoparticles in the ink for three days. The Turbi-scan results showed that the formulated Ni ink had been stable for 3 days without any indication of precipitation across the entire ink. Antireflection coating (ARC) layer in crystalline solar cell wafers was removed by laser ablation technique leading to the formation of 84 grooves where the Ni ink was printed by EHD continuous jet printing. The printability and microstructure of EHD-jet-printed Ni lines were investigated by using optical and electron microscopes. 84 Ni lines with the width less than 20 μm were successfully printed by one-time printing without any misalignment and fill the laser-ablated ARC grooves.
In this study, we propose Ti hole pattern structure on the transparent conductive oxide (TCO) lessdye-sensitized solar cells (DSSCs) using the lift-off process to improve the low light transmittance and lowefficiency caused by opaque Ti electrode. The formation of Ti hole patterns make it possible to move the dyeadsorption and electrolyte. The DSSCs with Ti hole patterns showed a higher photoelectric conversion efficiency(PCE) than those with general structure by 11.1%. As a result, The Ti hole pattern structure can be improved toincrease the light absorption of the dyes and PCE of the TCO-less DSSCs is also increased.
Stainless steel (SS) mesh was used to fabricate photo electrode for flexible dye-seisitzed solar cells(DSSCs) in order to evaluate them as replacements for more expensive transparent conductive oxide(TCO). We fabricated the DSSCs with new type of photo electrode, which consisted of flexible SS mesh coated with 100 nm thickness titanium (Ti) protective layer deposited using electron-beam deposition system. SS mesh DSSCs with protective layer showed higher efficiency than those without a protective layer. The best cell property in the present study showed the open circuit voltage (Voc) of 0.608 V, short-circuit current density (Jsc) of 5.73 mA cm-2, fill factor (FF) of 65.13%, and efficiency (η) of 2.44%. Compared with SS mesh based on DSSCs (1.66%), solar conversion of SS mesh based on DSSCs with protective layer improved about 47%.
A marvellous solar cell technology system based on organometal halide perovskites has recently shown an unprecedented progress in power conversion efficiency (PCE); the certified one of 17.9% and unconfirmed of 19.3%, as well as the estimated electricity with a generating cost lower than the half of conventional methods based on fossil fuels. In this report the present status of stability with regards to moisture, ambient temperature, ultraviolet and lead toxicity as well as the key technological developments for the early commercialization are covered. Comprehensive understanding of material science for perovskitesis required, together with complete encapsulation technologies beyond those for OLEDs, in order to ensure a20-year-longer-than lifetime of PSCs (perovskite solar cells) and the stability according to the IEC 61646damp heat test standard, which will result in the replacement of silicon solar cells with PSCs.
In this work, in order to manufacture the photoelectrode of dye-sensitized solar cells, thedifferent anatase TiO2 paste was prepared by simple route using hydrothermal method. In comparisonwith the traditional preparing process, the hydrothermally synthesized TiO2 gel was used to make pastedirectly. Thus, the making process was simplified and the solar conversion efficiency was improved. Incomparison with 5.34% solar energy efficiency of HP-1 photoelectrode, the 6.23% efficiency of HDP-1electrode was improved by 16.67%. This is because hydrothermally synthesized TiO2 gel was used tomake paste directly, the dispersibility between TiO2 particles was improved and get the smoothernetwork, leading to the charge transport ability of the electron generated in dye molecular was improved. Further, HDP-2 photoelectrode delivered the best results with Voc (open circuit voltage), Jsc (shortcircuit current density) FF (fill factor) and η(solar conversion efficiency) were 0.695 V, 15.81 mA cm-2,61.48% and 6.80%, respectively. In comparison with 5.34% of HP-1 photoelectrode, it was improved by27.34%.
In this study, a transparent conductive oxide (TCO)-less dye-sensitized solar cells (DSSCs)was fabricated by using titanium (Ti) electrode to replace the Fluorine-doped tin oxide (FTO) for thereduction of manufacturing cost. Ti film was formed by electron beam evaporation method and the resultsshowed the sheet resistance of Ti electrodes with a thikness of 500 nm similar to FTO. In case of powerconversion efficiency (PCE), a DSSC with Ti electrodes showed a lower value than that with FTO by0.38%. For the investigation of the difference, the DSSCs were measured and analyzed by usingelectrochemical impedance analyzer (EIS).
In this research, nanocomposite layers consisting of poly (3,4,-ethylene dioxythiophene):polystyrene sulfonic acid (PEDOT:PSS) and CuO nanoparticles were investigated as hole transport layers in organic solar cells based on poly (3-hexylthiophene) (P3HT) as the electron donor and (6.6) phenyl-C61-butyric acid methyl ester (PCBM) as the electron acceptor. The addition of CuO nanoparticles to PEDOT:PSS layer improved the solar cell performance with 0.5% CuO nanoparticle concentration. At optimized concentration, CuO mixed PEDOT:PSS films had good electrical (4.131 Ω?cm) and optical (transmittance > 90%) properties for using hole transporting layer. We investigated that improved solar cell performance with CuO nanoparticles mixed PEDOT:PSS films.
In this work, according to temperature and time of hydrothermal synthesis, the electrochemical properties of TiIO2 particle using TTIP based on thanging temperature and time in the hydrothermal synthesis were analyzed and optimized temperature and time were derived. When hydrothermal synthesis were analyzed and optimized temperature and time were derived. When hydrothermal synthesis temperature and time were 200℃ and 1 h, respectively. The fabricated DSSC delivered the best electrochemical properties. In that case, TiO2 particle size was 13.018 nm, electron transport time was 2.34×103s and recombination time was 4.01×102s. The lowest impedance of 13.52 Ω and Voc, Jsc, FF is 0.70 V, 11.50 mAcm2, 65.62%, respectively and corresponding efficiency of 5.34% was considered as the optimal.
In this paper, the low-temperature sintering of TiO2 is approached to solve the problem of high temperature sintering which decreases the interconnection between particles or between substrate and particle. TiO2 paste is prepared with Titanium (Ⅳ) isopropoxide as the precursor material and calcinate at different conditions (low temperature). In the results, since the changing of temperature and time of sintering, crystalline phase do not change and the intensities of anatase, rutile phase are higher. At 110℃, 7 h sintering condition, crystalline size of anatase and rutile phase are the smallest which are 13.07 and 17.47 nm, respectively. In addition, the highest zeta potential is about 32.77 mV and the repulsive force increases thus leading to the best of the dispersion characteristics between TiO2 particles. Futhermore, DSSCs at that condition exhibits the highest efficiency with the values of Voc, Jsc, FF and η are 0.69 V, 8.60 mA cm-2, 67.93% and 4.06%, respectively.
In this Paper, we have developed1 a low temperature process to make two type of Paste by using TIO2 nanoprticles(P25). The interconnections between substrate and TiO2 films or link between particles of free-binder Paste (FP1, FPZ, FP3) is very poor. Therefore, the Titanium(IV) isopropoxide was added to the TP paste to improve the interconnection. Electron transport time (Tt) and recombination time (Tr) are analyzed by IMPS (intensity-modulated photocurrent spectroscopy) and INIVS (Intensity-modulated photovltage spectroscopy). In the results, Tt of TP paste based DSSCs (about 4.3×10-3) is faster than other samples. Tt is Ionger from 2.7×10-2 s of FP2 to 3.0×10-2 s of TP. A solar conversion efficiency (DSSCs) of TP 15 3.54% for an incident solar energy of 100 mw cm-2(meanwhile, 2. 70% for DSSCs With FP2). The c아1versioIl efficiency is increased by 1.3 times.