The safety and stability concerns of liquid electrolytes in conventional lithium-ion batteries have accelerated the development of solid-state alternatives. NASICON type ceramics Li1.5Al0.5Ti1.5(PO4)3 (LATP) offer promising properties, including high bulk ionic conductivity and good compatibility with lithium anodes. However, their practical application is hindered by grain boundary resistance and relatively low total ionic conductivity. This study investigates the effect of Ta2O5 doping on LATP to overcome these limitations. Doping with 5 wt% Ta2O5 improved the ionic conductivity to 2.95 × 10-4 S/cm by enhancing lattice structure, reducing grain boundary resistance, and suppressing the formation of secondary phase. Additionally, Ta2O5 positively influenced the sintering behavior, resulting in a denser, and more uniform microstructure. These enhancements suggest that Ta2O5-doped LATP is a strong candidate for next-generation all-solid-state lithium-ion batteries.
The expansion of lithium-ion battery usage beyond portable electronic devices to electric vehicles and energy storage systems is driven by their high energy density and favorable cycle characteristics. Enhancing the stability and performance of these batteries involves exploring solid electrolytes as alternatives to liquid ones. While sulfide-based solid electrolytes have received significant attention for commercialization, research on amorphous-phase glass solid electrolytes in oxide-based systems remains limited. Here, we investigate the glass transition temperatures and sintering behaviors by changing the molecular ratio of Li2O/B2O3 in borate glass comprising Li2O-B2O3-Al2O3 system. The glass transition temperature is decreasing as increasing the amount of Li2O. When we sintered at 450℃, just above the glass transition temperature, the samples did not consolidate well, while the proper sintered samples could be obtained under the higher temperature. We successfully obtained the borate glass ceramics phases by melt-quenching method, and the sintering characteristics are investigated. Future studies could explore optimizing ion conductivity through refining processing conditions, adjusting the glass former-to-modifier ratio, and incorporating additional Li salt to enhance the ionic conductivity.
Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the electronic systems developed. If the electronic systems are exposed to HPEM (high power electromagnetics), the systems will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductors are vulnerable to external stress factor such as the coupled electromagnetic pulse. Therefore, we will discuss about malfunction behavior and DFR (destruction failure rate) of the semiconductor caused by amplitude and repetition rate of the pulse. For this experiment, the pulses were injected into the pins of general purpose IC due to the fact that pulse injection test enables the phenomenon after the HPEM is coupled to power cables. These pulses were produced by pulse generator and their characteristics are 2.1 [ns] of pulse width, 1.1 [ns] of pulse rise time and 30, 60, 120 [Hz] of pulse repetition rate. The injected pulses have changed frequency, period and duty ratio of output generated by Timer IC. Also, as the pulse repetition rate increases the breakdown threshold point of the timer IC was reduced.