In this study, composite transparent electrodes were fabricated either from a conductive polymer poly(3,4- ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) or silver nanowire (AgNW). Three transparent electrodes such as PEDOT:PSS, PEDOT:PSS and AgNW mixture, and AgNW were fabricated. As for a transparent electrode, measured sheet resistance values were 89.6, 60.6 and 28.6 Ω/sq, and the transmittance values were 80.2, 82.0 and 83.8% while surface roughness (Rq) values were 4.1, 8.1, 20.4 nm for PEDOT:PSS, PEDOT:PSS and AgNW mixture, and AgNW, respectively. To verify the overall performance of these composite electrodes, we applied these electrodes to the top electrode of the solution-processed organic solar cells (OSCs). PEDOT:PSS provided the best performance with a fill factor (FF) of 51.2% and a photoconversion efficiency (PCE) of 2.2%, while traditional metal top electrode OSC provided FF of 60.5% and PCE of 3.1%.

We investigated the effect of different thin-film thicknesses (25, 30, and 40 nm) on the electrical performance of solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs). The structural properties of the IZO thin films were investigated by atomic force microscopy (AFM). AFM images revealed that the IZO thin films with thicknesses of 25 and 40 nm exhibit an uneven distribution of grains, which deforms the thin film and degrades the performance of the IZO TFT. Further, the IZO thin film with a thickness of 30 nm exhibits a homogeneous and smooth surface with a low RMS roughness of 1.88 nm. The IZO TFTs with the 30-nm-thick IZO film exhibit excellent results, with a field-effect mobility of 3.0(±0.2) cm²/Vs, high Ion/Ioff ratio of 1.1×10⁷, threshold voltage of 0.4(±0.1) V, and subthreshold swing of 0.7(±0.01) V/dec. The optimization of oxide semiconductor thickness through analysis of the surface morphologies can thus contribute to the development of oxide TFT manufacturing technology.