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"Sr"

Structural and Electrical Properties of (La0.7-xBixSr0.3)FeO₃ Ceramics for Application of Temperature Sensors
Se-ho Kang, Myung-gyu Lee, Sam-haeng Lee, Joo-seok Park, Sung-gap Lee
J Electr Electron Mater 2025;38(6):645-649.   Published online November 1, 2025
DOI: https://doi.org/10.4313/JEEM.2025.38.6.6
(La1-xBixSr0.3)FeO₃ ceramics exhibiting excellent magnetoresistance were synthesized via the conventional solid-state reaction method. The structural and electrical properties were investigated as a function of Bi3+ content to evaluate their potential application as temperature sensors. And the sintering temperature and time were 1,200℃ and 4 h, respectively. The structural and electrical properties were investigated as a function of Bi content. With increasing Bi substitution, a slight enhancement in both average grain size and relative sintered density was observed. In particular, the specimen with x = 0.3 exhibited an average grain size of approximately 0.82 μm. All samples demonstrated negative temperature coefficient of resistance (NTCR) behavior, and the electrical resistivity decreased with increasing Bi content. The resistivity of the (La0.4Bi0.3Sr0.3)FeO₃ composition was 4.68 mΩ-cm at 25°C. Additionally, the temperature coefficient of resistance (TCR) and the B25/75-value, which quantify the sensitivity of resistivity to temperature variations, were found to increase with Bi content. (La0.4Bi0.3Sr0.3)FeO₃ sample exhibited a TCR of 0.43%/°C and a B25/75-value of 1,096 K at room temperature. The electrical conduction mechanism of the (La1-xBixSr0.3)FeO₃ system was well described by the small polaron hopping model, wherein thermally activated charge carriers hop between localized Fe-O-Fe sites via electron-phonon interactions.
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Structural and Electrical Properties of (1-x)La0.7Sr0.3MnO₃-xBaTiO₃ Ceramics for Temperature Sensors
Yong-seok Choi, Young-gon Kim, Sung-gap Lee
J Electr Electron Mater 2025;38(4):431-435.   Published online July 1, 2025
DOI: https://doi.org/10.4313/JKEM.2025.38.4.12
The composite specimens of (1-x)(La0.7Sr0.3)MnO₃-xBaTiO₃ (x = 0.05 ~ 0.3) were synthesized using the conventional solid-state reaction method, and the sintering temperature and time were 1,300℃ and 3 hours, respectively. As a result of observing the structural characteristics, the crystal structure of LSMO-BT solid solution was shown in which the rhombohedral LSMO phase and the tetragonal BT phase were separated and distributed, respectively. And fine grains having relatively small and uniformly distributed grains with sizes ranging from approximately 0.4 to 0.5 μm and pores within the specimens were observed. Notably, variations in the BT content did not significantly affect the grain size or porosity distribution, and a relative density of about 90% or more was shown. The resistivity, temperature coefficient of resistance (TCR), and B25/65-value of the 0.7LSMO-0.3BT specimen at room temperature showed the highest values of 1.94 Ω-cm, 0.292 %/℃, and 464 K, respectively. The resistivity behavior of the LSMO-BT composites matched well with the small polaron hopping conduction model.
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Structural and Electrical Properties of (La0.7Sr0.3)(Mn1-xFex)O3 Thin Films Prepared by Sol-Gel Method for Thermistor Devices
Ji-su Yuk, Sam-haeng Yi, Myung-gyu Lee, Joo-seok Park, Young-gon Kim, Sung-gap Lee
J Electr Electron Mater 2024;37(2):164-168.   Published online March 1, 2024
DOI: https://doi.org/10.4313/JKEM.2024.37.2.6
(La0.7Sr0.3)(Mn1-xFex)O3 (LSMFO) (x = 0.03, 0.06, 0.09, 0.12) precursor solution are prepared by sol-gel method. LSMFO thin films are fabricated by the spin-coating method on Pt/Ti/SiO2/Si substrate, and the sintering temperature and time are 800℃ and 1 hr, respectively. The average thickness of the 6-times coated LSMFO films is about 181 to 190 nm and average grain size is about 18 to 20 nm. As the amount of Fe added in the LSMFO thin film increased, the resistivity decreased, and the TCR and B25/65-value increased. Electrical resistivity, TCR and B25/65-value of the (La0.7Sr0.3)(Mn0.88Fe0.12)O3 thin film are 0.0136 mΩ-cm, 0.358%/℃, and 328 K at room temperature, respectively. The resistivity properties of LSMFO thin films matched well with Mott’s VRH model.
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Structural and Electrical Properties of (La0.7-xCex)Sr0.3MnO3 Ceramics
Tae-yeon In, Jeong-eun Lim, Byeong-jun Park, Sam-haeng Yi, Myung-gyu Lee, Joo-seok Park, Sung-gap Lee
J Electr Electron Mater 2023;36(3):249-254.   Published online May 1, 2023
DOI: https://doi.org/10.4313/JKEM.2023.36.3.6
La0.7-xCexSr0.3MnO3 specimens were fabricated by a solid state reaction method and structural and electrical properties with variation of Ce4+ contents were measured. All specimens exhibited a polycrystalline rhombohedral crystal structure, and the (110) peaks were shifted to low angle side with increasing the amount of Ce4+ contents. As Ce4+ ions with different ion radii and charges are substituted with La3+ ions, electrical properties are thought to be affected by changes in the double exchange interaction between Mn3+-Mn4+ ions due to distortion of the unit lattice, a decrease in oxygen vacancy concentration, and an increase in lattice defects. Resistivity gradually decrease as the amount of Ce4+ added increased, and negative temperature coefficient of resistance (NTCR) properties were shown in all specimens. In the La0.5Ce0.2Sr0.3MnO3 specimens, electrical resistivity, TCR and B-value were 31.8 Ω-cm, 0.55%/℃ and 605 K, respectively.
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Structural and Electrical Properties of La0.7Sr0.3-xMgxMnO3 Ceramics with MgO Content
Hyun-tae Kim, Jeong-eun Lim, Byeong-jun Park, Sam-haeng Yi, Myung-gyu Lee, Joo-seok Park, Young-gon Kim, Sung-gap Lee
J Electr Electron Mater 2023;36(3):275-279.   Published online May 1, 2023
DOI: https://doi.org/10.4313/JKEM.2023.36.3.10
La0.7Sr0.3-xMgxMnO3 (LSMMO) (x=0.05~0.20) specimens are fabricated by a solid phase sintering method, and the sintering temperature and time are 1,300℃ and 2 hours, respectively. The dependence of the crystalline structure according to the amount of Mg2+ contents is not observed, and all specimens show a polycrystalline rhombohedral crystal structure, the X-ray diffraction (110) peaks move to the high angle side with increasing the amount of Mg2+ contents. LSMMO specimens exhibit a granule-shaped microstructure with an average grain size of 1 μm or less. Resistivity gradually decrease as the amount of Mg2+ contents increased. And in the La0.7Sr0.1Mg0.2MnO3 specimen, resistivity and B25/65-value are 36.7 Ω-cm and 394 K at room temperature, respectively. LSMMO specimens show a variable-range hopping (VRH) electrical conduction mechanism, and the negative temperature of coefficient of resistance (NTCR) is approximately 0.37~0.38%/℃.
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Structural and Electrical Properties of La0.7Sr0.3MnO3 Thin Films for Thermistor Applications
Jeong-Eun Lim, Byeong-Jun Park, Sam-Haeng Yi, Myung-gyu Lee, Joo-Seok Park, Byung-cheul Kim, Young-gon Kim, Sung-gap Lee
J Electr Electron Mater 2022;35(5):499-503.   Published online September 1, 2022
DOI: https://doi.org/10.4313/JKEM.2022.35.5.12
La0.7Sr0.3MnO3 precursor solution were prepared by a sol-gel method. La0.7Sr0.3MnO3 thin films were fabricated by a spin-coating method on a Pt/Ti/SiO2/Si substrate. Structural and electrical properties with the variation of sintering temperature were measured. All specimens exhibited a polycrystalline orthorhombic crystal structure, and the average thickness of the specimens coated 6 times decreased from about 427 nm to 383 nm as the sintering temperature increased from 740℃ to 830℃. Electrical resistance decreased as the sintering temperature increased. In the La0.7Sr0.3MnO3 thin films sintered at 830℃, electrical resistivity, TCR, B-value, and activation energy were 0.0374 mΩㆍcm, 0.316%/℃, 296 K and 0.023 eV, respectively.
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Structural and Electrical Properties of (La,Nd,Sr)MnO3 Ceramics for NTC Thermistor Devices
Kyeong-ha Shin, Byeong-jun Park, Jeong-eun Lim, Sam-haeng Lee, Myung-gyu Lee, Joo-seok Park, Sung-gap Lee
J Electr Electron Mater 2022;35(3):292-296.   Published online May 1, 2022
DOI: https://doi.org/10.4313/JKEM.2022.35.3.12
(La0.5Nd0.2Sr0.3)MnO3 specimens were prepared by a solid-state reaction. In all specimens, X-ray diffraction patterns of an orthorhombic structure were shown. The fracture surfaces of (La0.5Nd0.2Sr0.3)MnO3 specimens showed a transgranular fracture pattern be possibly due to La ions (0.122 nm) as a perovskite A-site dopant substituting for Nd ions (0.115 nm) having a small ionic radius. The full-width at half maximum (FWHM) of the Mn 2p XPS spectra showed a value greater than that [8] of the single valence state, which is believed to be due to the overlapping of Mn2+, Mn3+, and Mn4+ ions. The dependence of Mn 2p spectra on the Mn3+/Mn4+ ratio according to sintering time was not observed. Electrical resistivity resulted in the minimum value of 100.7 Ω-cm for the specimen sintered for 9 hours. All specimens show a typical negative temperature coefficient of resistance (NTCR) characteristics. In the 9-hour sintered specimen, TCR, activation energy, and B25/65-value were -1.24%/℃, 0.19 eV, and 2,445 K, respectively.
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Diffusion Model of Aluminium for the Formation of a Deep Junction in Silicon
Won-chae Jung
J Electr Electron Mater 2020;33(4):263-270.   Published online July 1, 2020
DOI: https://doi.org/10.4313/JKEM.2021.33.4.3
In this study, the physical mechanism and diffusion effects in aluminium implanted silicon was investigated. For fabricating power semiconductor devices, an aluminum implantation can be used as an emitter and a long drift region in a power diode, transistor, and thyristor. Thermal treatment with O2 gas exhibited to a remarkably deeper profile than inert gas with N2 in the depth of junction structure. The redistribution of aluminum implanted through via thermal annealing exhibited oxidation-enhanced diffusion in comparison with inert gas atmosphere. To investigate doping distribution for implantation and diffusion experiments, spreading resistance and secondary ion mass spectrometer tools were used for the measurements. For the deep-junction structure of these experiments, aluminum implantation and diffusion exhibited a junction depth around 20 μm for the fabrication of power silicon devices.
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Dependence of LaAlO3/SrTiO3 Interfacial Conductivity on the Thickness of LaAlO3 Layer Investigated by Current-voltage Characteristics
Jin Sang Kim, Ho Won Jang, Seon Young Moon, Seung Hyub Baek, Chong Yun Kang, Ji Won Choi, Heon Jin Choi
J Electr Electron Mater 2012;25(8):616-619.   Published online August 1, 2012
Oxides possess several interesting properties, such as ferroelectricity, magnetism, superconductivity, and multiferroic behavior, which can effectively be used oxide electronics based on epitaxially grown heterostructures. The microscopic properties of oxide interfaces may have a strong impact on the electrical transport properties of these heterostructures. It was recently demonstrated that high electrical conductivity and mobility can be achieved in the system of an ultrathin LaAlO3 film deposited on a TiO2-terminated SrTiO3 substrate, which was a remarkable result because the conducting layer was at the interface between two insulators. In this study, we observe that the current-voltage characteristics exhibit LaAlO3 thickness dependence of electrical conductivity in TiO2-terminated SrTiO3. We find that the LaAlO3 layers with a thickness of up 3 unit cells, result in highly insulating interfaces, whereas those with thickness of 4 unit cells and above result in conducting interfaces.
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Dielectric and Piezoelectric Properties of [Li0.04(Na0.5K0.5)0.96](Nb0.86Ta0.10Sb0.04)O3 Ceramics Doped with SrO
Min Ho Park, Ju Hyun Yoo
J Electr Electron Mater 2012;25(3):198-203.   Published online March 1, 2012
In this study, [Li0.04(Na0.5K0.5)0.96](Nb0.86Ta0.10Sb0.04)O3 + xSrO (x=0, 0.0025, 0.005, 0.0075) ceramics were synthesized by the conventional mixed oxide method. The X-ray diffraction patterns demonstrated that ceramics possessed single perovskite structure. The SEM images indicate that microstructure can be obviously affected by a small amount of added SrO. The phase transition temperature tetragonal-cubic(T(c)) and orthorhombic -tetragonal(T(o-t)) shifts downward and upward with the increase of Sr addition, respectively. The excellent piezoelectric properties of d33=170[pC/N], k(p)=0.37, Q(m)=64.12, T(o-t)=153℃ and T(c)=370℃ were obtained from the 0.25 mol% Sr added ceramics sintered at 1,120℃ for 1 h.
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Thin Films and Sensors : Preparation of Conductive SrMoO3 Thin Films by RF Magnetron Sputtering and Evaluation of Their Electrical Conduction Properties
Hee Uk Ryu, Ho Jung Sun
J Electr Electron Mater 2011;24(6):468-472.   Published online June 1, 2011
Conductive SrMoO3 thin films were fabricated by RF magnetron sputtering with the powder-type sputtering target, and annealed for crystallization. When RTP (rapid thermal processing) in vacuum was applied, the fabricated thin films showed the mixed phases of SrMoO3 and SrMoO4, but SrMoO3 phase could be promoted by the lowering of the working pressure during deposition. In order to eliminate O2 gas during deposition and annealing, further lowering of the working pressure and furnace annealing in hydrogen atmosphere were tried. With the optimization of the deposition and annealing conditions, the thin film with nearly single-phase of SrMoO3 was obtained, and it showed good electrical conduction properties with a low resistivity of 2.5×10(-3)Ω·cm at room temperature.
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Superconductor and Magnetic Materials : Effects of Oxidant on the Properties of Sr-ferrites Using Mill Scale
Tae Sik Cho, Seung Duek Choi
J Electr Electron Mater 2011;24(2):131-135.   Published online February 1, 2011
We have been studied the effects of oxidant on the properties of Sr-ferrite magnets using mill scale for motor. The small-added (0.5 wt%) NaNO3 oxidant improved significantly the degree of oxidation and the grindability of mill scale, and then highly enhanced the magnetic properties of anisotropic Sr-ferrite sintered magnets; such as the remanent flux density from 3.55 to 3.80 kG, the intrinsic coercivity from 2.75 to 3.22 kOe, and the maximum energy product from 2.90 to 3.45 MGOe.
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Regular Paper : Preparation of Sr2FeMoO6 Thin Films by RF Magnetron Sputtering and Their Electrical Conduction Properties
Hee Uk Ryu, Ho Jung Sun
J Electr Electron Mater 2010;23(12):966-972.   Published online December 1, 2010
Single-phase Sr2FeMoO6 thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of O2 gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the Sr2FeMoO6 phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase Sr2FeMoO6: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of 1.6×10(-2)Ω·cm at room temperature.
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Regular Paper : Mechanical and Electrical Properties of Aluminum Wires of ACSR Conductors due to Forest Fire
Won Kyo Lee, Jung Won Lee, Byung Geol Kim
J Electr Electron Mater 2010;23(9):730-735.   Published online September 1, 2010
Forest fire can cause a serious damage to overhead conductors. Therefore, detailed investigation on the changes of mechanical and electrical properties of damaged conductors should be carried out to understand the effect of forest fires on conductors. This is of critical importance in maintaining transmission line safely. This paper examines the changes of mechanical and electrical properties of flame exposed conductor. Tensile strength (TS) decreased according to increase of forest fire temperature and conductivity changed according to forest fire temperature. Specimens were aluminum conductors of aluminium conductor steel reinforced (ACSR) 410, 240, 480 ㎟. In this paper, the electrical and mechanical characteristics of forest fires exposed overhead conductors depending on the diameter of aluminum conductors are presented. It was possible to estimate the degree of deterioration caused by forest fires. The detailed results are given in the paper.
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Electric Properties of Carbon Aerogel for Super Capacitors
Jeong Woo Han, Kyeong Min Lee, Du Hee Lee, Sang Won Lee, Jung Rag Yoon
J Electr Electron Mater 2010;23(8):660-666.   Published online August 1, 2010
Abstract: Carbon aerogels are promising materials as electrodes for electrical double layer capacitors (EDLCs). An optimum process is presented for synthesis of nanoporous carbon aerogels via pyrolyzing resorcinol-formaldehyde (RF) organic aerogels, which could be cost-effectively manufactured from RF wet gels. The major reactions between resorcinol and formaldehyde include an addition reaction to form hydroxymethyl derivatives (-CH(2)OH), and then a condensation reaction of the hydroxymethyl derivatives (-CH(2)-)- and methylene ether (-CH(2)OCH(2)-) bridged compounds. The textural properties of carbon aerogels obtained were characterized by nitrogen adsorption/desorption analysis and SEM and TEM. The application of the resultant carbon for electrodes of electric double layers capacitor (EDLC) in organic TEABF4/ACN electrolyte indicated that the ESR, as low as 55 mΩ, was smaller than for commercially activated carbons. And EDLC with carbon Aerogel electrodes has an excellent stable more than for commercially activated carbons.
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Study on the Sintering Temperature and Electrical Properties of CuO Doped (Ba0.5,Sr0.5)TiO3 Ceramics
Seok Woo Yun, Ku Tak Lee, Ey Goo Kang, Jung Hyuk Koh
J Electr Electron Mater 2010;23(6):454-457.   Published online June 1, 2010
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Preparation of La0.6Sr0.4MnO3 Thin Films by RF Magnetron Sputtering and Their Microstructure and Electrical Conduction Properties
Chang Sun Park, Ho Jung Sun
J Electr Electron Mater 2010;23(4):303-310.   Published online April 1, 2010
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Temperature and Load Change behavior of Overhead Conductor under Loading current due to Forest Fire
Byung Geol Kim, Young Ho Jang, Shang Shu Kim, Se Won Han
J Electr Electron Mater 2009;22(4):366-371.   Published online April 1, 2009
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Luminescent Properties of SrTiO3 Phosphors doped with Sm
Chang Sub Park, Il Yu
J Electr Electron Mater 2008;21(11):1019-1023.   Published online November 1, 2008
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Mechanical and Electrical Properties of Overhead Conductor due to Forest Fire
Byung Geol Kim, Young Ho Jang, Shang Shu Kim, Se Won Han
J Electr Electron Mater 2008;21(11):1042-1048.   Published online November 1, 2008
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Preparation and Luminescent Properties of (Sr,Ba)TiO3:Pr, AI Phosphors
Chang Sub Park, Il Yu
J Electr Electron Mater 2008;21(9):825-828.   Published online September 1, 2008
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The Aging Behavior of Overhead Conductor due to Forest Fire
J Electr Electron Mater 2007;20(12):1105-1111.   Published online December 1, 2007
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Synthesis and Photo Luminescent Characteristics of SrAl2O4:Eu2+, Dy3+ Phosphor using Polymer Matrix
J Electr Electron Mater 2007;20(8):671-679.   Published online August 1, 2007
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Structural and Electrical Properties of (Ba,Sr,Ca)TiO3 Thick Films doped with Dy2O3
J Electr Electron Mater 2007;20(8):680-684.   Published online August 1, 2007
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Densification and Dielectric Properties of Yb2O3 doped (Ba,Sr,Ca)TiO3 Thick Films
J Electr Electron Mater 2007;20(7):581-586.   Published online July 1, 2007
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Luminescent Properties of SrTiO3 Phosphors doped with Pr,Eu and Al
J Electr Electron Mater 2007;20(6):527-530.   Published online June 1, 2007
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Optical Characterization of Sensory Rhodopsin 2 Thin Films using a Near-filed Scanning Microwave Microscope
J Electr Electron Mater 2007;20(1):80-85.   Published online January 1, 2007
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Luminescent Properties of SrTiO3:Al,Pr Phosphors doped with Er and Y
J Electr Electron Mater 2006;19(10):971-975.   Published online October 1, 2006
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Fabrication of High Tc Superconductor using Thermal Pyrolysis Method
J Electr Electron Mater 2006;19(8):785-789.   Published online August 1, 2006
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