In this study, KTN heterolayer thin films were fabricated by alternately stacking films of K(Ta_0.70Nb_0.30)O₃ and K(Ta_0.55Nb_0.45)O₃ synthesized using the sol-gel method. The sintering temperature and time were 750℃ and 1 hour, respectively. All specimens exhibited a polycrystalline pseudo-cubic crystal structure, with a lattice constant of approximately 0.398 nm. The average grain size was around 130~150 nm, indicating relatively uniform sizes regardless of the number of coatings. The average thickness of a single-coated film was approximately 70 nm. The phase transition temperature of the KTN heterolayer films was found to be approximately 8~12℃. Moreover, the 6-coated KTN heterolayer film displayed an excellent dielectric constant of about 11,000. As the number of coatings increased, and consequently the film thickness, the remanent polarization increased, while the coercive field decreased. The 6-coated KTN heterolayer film exhibited a remanent polarization and coercive field of 11.4 μC/cm² and 69.3 kV/cm at room temperature, respectively. ΔT showed the highest value at a temperature slightly above the Curie temperature, and for the 6-coated KTN heterolayer film, the ΔT and ΔT/ΔE were approximately 1.93 K and 0.128×10^-6 K·m/V around 40℃, respectively.

(La0.7Sr0.3)(Mn1-xFex)O3 (LSMFO) (x = 0.03, 0.06, 0.09, 0.12) precursor solution are prepared by sol-gel method. LSMFO thin films are fabricated by the spin-coating method on Pt/Ti/SiO2/Si substrate, and the sintering temperature and time are 800℃ and 1 hr, respectively. The average thickness of the 6-times coated LSMFO films is about 181 to 190 nm and average grain size is about 18 to 20 nm. As the amount of Fe added in the LSMFO thin film increased, the resistivity decreased, and the TCR and B25/65-value increased. Electrical resistivity, TCR and B25/65-value of the (La0.7Sr0.3)(Mn0.88Fe0.12)O3 thin film are 0.0136 mΩ-cm, 0.358%/℃, and 328 K at room temperature, respectively. The resistivity properties of LSMFO thin films matched well with Mott’s VRH model.

La_0.7Sr_0.3-xMg_xMnO₃ (LSMMO) (x=0.05~0.20) specimens are fabricated by a solid phase sintering method, and the sintering temperature and time are 1,300℃ and 2 hours, respectively. The dependence of the crystalline structure according to the amount of Mg²⁺ contents is not observed, and all specimens show a polycrystalline rhombohedral crystal structure, the X-ray diffraction (110) peaks move to the high angle side with increasing the amount of Mg²⁺ contents. LSMMO specimens exhibit a granule-shaped microstructure with an average grain size of 1 μm or less. Resistivity gradually decrease as the amount of Mg²⁺ contents increased. And in the La_0.7Sr_0.1Mg_0.2MnO₃ specimen, resistivity and B_25/65-value are 36.7 Ω-cm and 394 K at room temperature, respectively. LSMMO specimens show a variable-range hopping (VRH) electrical conduction mechanism, and the negative temperature of coefficient of resistance (NTCR) is approximately 0.37~0.38%/℃.

La_0.7Sr_0.3MnO₃ precursor solution were prepared by a sol-gel method. La_0.7Sr_0.3MnO₃ thin films were fabricated by a spin-coating method on a Pt/Ti/SiO₂/Si substrate. Structural and electrical properties with the variation of sintering temperature were measured. All specimens exhibited a polycrystalline orthorhombic crystal structure, and the average thickness of the specimens coated 6 times decreased from about 427 nm to 383 nm as the sintering temperature increased from 740℃ to 830℃. Electrical resistance decreased as the sintering temperature increased. In the La_0.7Sr_0.3MnO₃ thin films sintered at 830℃, electrical resistivity, TCR, B-value, and activation energy were 0.0374 mΩㆍcm, 0.316%/℃, 296 K and 0.023 eV, respectively.

(La_0.5Nd_0.2Sr_0.3)MnO₃ specimens were prepared by a solid-state reaction. In all specimens, X-ray diffraction patterns of an orthorhombic structure were shown. The fracture surfaces of (La_0.5Nd_0.2Sr_0.3)MnO₃ specimens showed a transgranular fracture pattern be possibly due to La ions (0.122 nm) as a perovskite A-site dopant substituting for Nd ions (0.115 nm) having a small ionic radius. The full-width at half maximum (FWHM) of the Mn 2p XPS spectra showed a value greater than that [8] of the single valence state, which is believed to be due to the overlapping of Mn²⁺, Mn³⁺, and Mn⁴⁺ ions. The dependence of Mn 2p spectra on the Mn³⁺/Mn⁴⁺ ratio according to sintering time was not observed. Electrical resistivity resulted in the minimum value of 100.7 Ω-cm for the specimen sintered for 9 hours. All specimens show a typical negative temperature coefficient of resistance (NTCR) characteristics. In the 9-hour sintered specimen, TCR, activation energy, and B25/65-value were -1.24%/℃, 0.19 eV, and 2,445 K, respectively.

This study discusses and demonstrates the structural stability of highly ordered Pt patterns formed on a transparent and flexible substrate through the process of nanotransfer printing (nTP). Bending tests comprising approximately 1,000 cycles were conducted for observing Pt line patterns with a width of 1 μm formed along the direction of the horizontal (x-axis) and vertical (y-axis) axes (15 mm × 15 mm); and adhesion tests were performed with an ultrasonicator for a period greater than ten minutes, to analyze the Pt crossbar patterns. The durability of both types of patterns was systematically analyzed by employing various microscopes. The results show that the Pt line and Pt crossbar patterns obtained through nTP are structurally stable and do not exhibit any cracks, breaks, or damages. These results corroborate that nTP is a promising nanotechnology that can be applied to flexible electronic devices. Furthermore, the multiple patterns obtained through nTP can improve the working performance of flexible devices by providing excellent structural stability.

In this study, ZnxMn_3-xO₄ (x=0.95~1.20) specimens were prepared by using a conventional mixed oxide method. All specimens were sintered in air at 1,200℃ for 12 h and cooled at a rate of 2℃/min to 800℃, subsequently quenching to room temperature. We investigated the structural and electrical properties of Zn_xMn_3-xO₄ specimens with variation of ZnO amount for the application of NTC thermistors. As results of X-ray diffraction patterns, all specimens showed the formation of a complete solid solution with tetragonal spinel phase. And, the second phase was observed by the solubility limit of Zn ions in x≥1.10 composition. The average grain size was increased from 2.72 μm to 4.18 μm with increasing the compositional ratio of Zn ion from x=0.95 to 1.20, respectively. Zn_1.10 Mn_1.90 O₄ specimen showed the minimum electrical resistance of 57.5 kΩ at room temperature and activation energy of 0.392 eV.

IGZO thin films have been prepared by RF magnetron sputtering. The structural, electrical and optical properties of the IGZO thin films have been investigated as a function of deposition condition. XRD analysis of IGZO thin films showed a typical crystallographic orientation with c-axis perpendicular regardless of deposition conditions. The carrier mobility, carrier concentration and resistivity of the IGZO films sputtered at 200 W, 1mTorr and 300℃ were 28.5 cm2/V·sec, 2.6×1020 cm3, 8.8×10-4 Ω·cm respectively. The optical transmittance were higher than 80% at visible region regardless of the deposition conditions under the experiments above, and specifically higher than 90% at wave length over 500 nm. The absorption edge was shifted to shorter wavelength with increase of carrier concentration.

In this study, lead-free (Na0.465K0.465Bi0.07)(Nb0.93Ti0.07)O3-0.08MnO2 ceramics were fabricated by conventional mixed oxide method. Structural and electrical properties of lead-free (Na0.465K0.465Bi0.07)(Nb0.93Ti0.07)O3-0.08MnO2 ceramics with the variation of sintering temperature were investigated. As results of x-ray diffraction analysis, all specimens showed a typical polycrystalline perovskite structure without presence of the second phase. Sintered density increased with an increases of sintering temperature and the specimen sintered at 1,020℃ showed the maximum value of 4.5 g/cm3. The average grain size of the (Na0.465K0.465Bi0.07)(Nb0.93Ti0.07)O3-0.08MnO2 specimen sintered at 1,020℃ is about 0.83 μm. Electromechanical coupling factor, relative dielectric constant and dielectric loss of (Na0.465K0.465Bi0.07)(Nb0.93Ti0.07)O3-0.08MnO2 specimens sintered at 1,020℃ were 0.252, 741 and 0.043% respectively.

In this paper, the properties of SnZnO films obtained from solution process with different component fractions were compared. The thermal behavior of the SnZnO solutions showed only a slight change according to the component fraction change. However, the definite changes were revealed at the structural properties of the SnZnO films. With diverse analyses, the origin of the changes was proved to the influence of phase change from SnO2 to ZnO in SnZnO lattice. With the SnO2-phase-dominant SnZnO, the highest field effect mobility and on/off ratio of about 8.6 cm2/Vs and 2 × 108 were achieved, respectively.

In this paper, CdS thin films, which were widely used window layer of the CdTe and the Cu(In,Ga)Se2 thin film solar cell, were grown by chemical bath deposition, and effects of pH of reaction solution on the structural and optical properties were investigated. For pH<10.5, as the pH of reaction solution was higher, the deposition rate of CdS films was increased by improving ion-by-ion reaction in the substrate surface and the crystallinity of the films was improved. However, when the pH was higher than 10.5, the deposition rate was decreased because of smaller Cd2+ ion concentration in the reaction solution. Also, the crystallinity of the films were deteriorated. The CdS films deposited at lower pH showed poor optical transmittance due to adsorbed colloidal particles, while the transmittance was improved for higher pH.