Power MOSFET is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Recently attention to the motor and the application of various technologies. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters, motor controllers. In this paper, design the 600 V Planar type, and design the trench type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

Citations

• Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems
  Bharaneedharan Balasundaram, P. Suresh, Parvathy Rajendran, It Ee Lee, C. Ahamed Saleel
  IEEE Access.2025; 13: 3072.     CrossRef