We investigated the effects of annealing on the electrical and thermal properties of ZTO/4H-SiC heterojunction diodes. A ZTO thin film layer was grown on p-type 4H-SiC substrate by using solution process. The ZTO/SiC heterojunction structures annealed at 500℃ show that Ion/Ioff increases from ~5.13×107 to ~1.11×109 owing to the increased electron concentration of ZTO layer as confirmed by capacitance-voltage characteristics. In addition, the electrical characterization of ZTO/SiC heterojunction has been carried out in the temperature range of 300∼500 K. When the measurement temperature increased from 300 K to 500 K, the reverse current variation of annealed device is higher than as-grown device, which is related to barrier height in the ZTO/SiC interface. It is shown that annealing process is possible to control the electrical characteristics of ZTO/SiC heterojunction diode.

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using n`` Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized n+ Si wafers. The thickness of 30 nm Al2O3 films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The Al2O3 films were rapid-annealed at 400 , 600 , 800 , and 1,000 , respectively. Active layers of ZTO films were deposited on the Al2O3/SiO2 coated n+ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of Al2O3 films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.

Transparent thin film transistors were fabricated on n+-Si wafers coated by Al2O3/SiO2. Zinctin oxide (ZTO) films deposited by rf magnetron sputtering were employed for active layers. The mobility(μs), threshold voltage (VT), and sub threshold swing (SS) dependances on ZTO thickness were analyzed. The VT decreased with increasing ZTO thickness. The μs raised from 5.1 cm2/Vsec to 27.0 cm2/Vsec byincreasing ZTO thickness from 7 nm to 12 nm, and then decreased with ZTO thickness above 12 nm. The SS was proportional to ZTO thickness.

Mg doped zinc tin oxide (ZTOMg) thin films were prepared on glasses by rf magnetron sputtering. O was introduced into the chamber during the sputtering. The optical properties of the films as a function of oxygen flow rate were studied. The crystal structure, elementary properties, and depth profiles of the films were investigated by X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS), respectively. Bottom-gate trdnsparent thin film transistors were fabricated on N Si wafers, and the variation of mobility, threshold voltage etc. with the oxygen flow rate were observed.

Transparent thin film transistors (TTFT) were fabricated on N+ Si wafers. SiO2, Si3N4/SiO2 and Al2O3/SiO2 grown on the wafers were used as gate insulators. The rf magnetron sputtered zinc tin oxide (ZTO) films were adopted as active layers. N+Si wafers were wet-oxidized to grow SiO2. Si3N4 and Al2O3 films were deposited on the SiO2 by plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD), respectively. The mobility, Ion/Ioff and subthreshold swing (SS) were obtained from the transfer characteristics of TTFTs. The properties of gate insulators were analyzed by comparing the characteristics of TTFTs. The property variation of the ZTO TTFTs with time were observed.