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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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"n-ZnO"

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"n-ZnO"

AZO-Embedded Transparent Cu Oxide Photodetector
Gyeong-nam Lee, Wang-hee Park, Sung-yun Um, Jun-min Jang, Sol-ma-ru Lim, Hyun-chan Yun, Seong-woo Hyeon, Joondong Kim
J Korean Inst Electr Electron Mater Eng 2017;30(6):339-344.   Published online June 1, 2017
DOI: https://doi.org/10.4313/JKEM.2017.30.6.339
An all-transparent photodetector was fabricated by structuring Cu2O/ZnO/AZO/ITO on a glass substrate. The visible-range transmittance was as high as 80%, which ensures clear vision forhuman eyes. High-transparency metal conductive oxides (p-type Cu2O and n-type ZnO) were appliedto form the transparent p/n junction. The functional AZO layer was adopted to improve the transparent photodetector performance between the ZnO and ITO, improving the photoresponses because of its electrical conductivity. To clarify the AZO functionality, a comparator device was prepared without the AZO layer in the formation of Cu2O/ZnO/ITO/Glass. The Cu2O/ZnO/AZO/ITO device provided a rectifying ratio of 113.46, significantly better than the 9.44 of the Cu2O/ZnO/ITO device. In addition, the Cu2O/ZnO/AZO/ITO device`s photoresponses at short wavelengths were better than those of the comparator. The functioning AZO layer provides ahigh-performing transparent Cu oxide photodetector and may suggest a route for the design of efficient photoelectric devices.
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V-I Curves of p-ZnO:Al-n-ZnO:Al Junction Fabricated by RF Magnetron Sputtering
Hu Jie Jin, Yun Hwan Jeong, Choon Bae Park
J Korean Inst Electr Electron Mater Eng 2008;21(6):575-579.   Published online June 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.6.575
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