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반도체 / STI 를 이용한 서브 0.1㎛ VLSI CMOS 소자에서의 초박막 게이트산화막의 박막개선에 관한 연구

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A study on Improvement of sub 0.1㎛ VLSI CMOS device Ultra Thin Gate Oxide Quality Using Novel STI Structure

Gum Young Eom, Hwan Sool Oh
J Electr Electron Mater 2000;13(9):729-734.
Published online: September 1, 2000
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A study on Improvement of sub 0.1㎛ VLSI CMOS device Ultra Thin Gate Oxide Quality Using Novel STI Structure
J Electr Electron Mater. 2000;13(9):729-734.   Published online September 1, 2000
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Include:
A study on Improvement of sub 0.1㎛ VLSI CMOS device Ultra Thin Gate Oxide Quality Using Novel STI Structure
J Electr Electron Mater. 2000;13(9):729-734.   Published online September 1, 2000
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